上传BOM
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部重置
应用所有
结果:
| 图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IPT019N08N5ATMA1MOSFET N-CH 80V 32A/247A 8HSOF Infineon Technologies |
3,850 | - |
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规格书 |
OptiMOS™ 5 | 8-PowerSFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 32A (Ta), 247A (Tc) | 6V, 10V | 1.9mOhm @ 150A, 10V | 3.8V @ 159µA | 127 nC @ 10 V | ±20V | 9200 pF @ 40 V | - | 231W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-HSOF-8-1 |
|
IPP65R150CFDAAKSA1MOSFET N-CH 650V 22.4A TO220-3 Infineon Technologies |
264 | - |
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规格书 |
CoolMOS™ | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 22.4A (Tc) | 10V | 150mOhm @ 9.3A, 10V | 4.5V @ 900µA | 86 nC @ 10 V | ±20V | 2340 pF @ 100 V | - | 195.3W (Tc) | -40°C ~ 150°C (TJ) | Automotive | AEC-Q101 | Through Hole | PG-TO220-3 |
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IPB320P10LMATMA1TRENCH >=100V PG-TO263-3 Infineon Technologies |
916 | - |
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规格书 |
OptiMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 100 V | 6.5A (Ta), 63A (Tc) | 4.5V, 10V | 32mOhm @ 54A, 10V | 2V @ 5.55mA | 219 nC @ 10 V | ±20V | 11000 pF @ 50 V | - | 3.8W (Ta), 300W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-3 |
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IPP330P10NMAKSA1TRENCH >=100V PG-TO220-3 Infineon Technologies |
385 | - |
|
规格书 |
OptiMOS™ | TO-220-3 | Tube | Active | P-Channel | MOSFET (Metal Oxide) | 100 V | 6.9A (Ta), 62A (Tc) | 10V | 33mOhm @ 53A, 10V | 4V @ 5.55mA | 236 nC @ 10 V | ±20V | 11000 pF @ 50 V | - | 3.8W (Ta), 300W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3 |
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IPB011N04LGATMA1MOSFET N-CH 40V 180A TO263-7 Infineon Technologies |
2,111 | - |
|
规格书 |
OptiMOS™ | TO-263-7, D2PAK (6 Leads + Tab) | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 180A (Tc) | 4.5V, 10V | 1.1mOhm @ 100A, 10V | 2V @ 200µA | 346 nC @ 10 V | ±20V | 29000 pF @ 20 V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-7-3 |
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IPB60R125C6ATMA1MOSFET N-CH 600V 30A D2PAK Infineon Technologies |
1,840 | - |
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规格书 |
CoolMOS™ C6 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 600 V | 30A (Tc) | 10V | 125mOhm @ 14.5A, 10V | 3.5V @ 960µA | 96 nC @ 10 V | ±20V | 2127 pF @ 100 V | - | 219W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TO263-3 |
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IPP60R125C6XKSA1MOSFET N-CH 600V 30A TO220-3 Infineon Technologies |
440 | - |
|
规格书 |
CoolMOS™ | TO-220-3 | Tube | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 600 V | 30A (Tc) | 10V | 125mOhm @ 14.5A, 10V | 3.5V @ 960µA | 96 nC @ 10 V | ±20V | 2127 pF @ 100 V | - | 219W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-3 |
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IPA60R125C6XKSA1MOSFET N-CH 600V 30A TO220-FP Infineon Technologies |
132 | - |
|
规格书 |
CoolMOS™ | TO-220-3 Full Pack | Tube | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 600 V | 30A (Tc) | 10V | 125mOhm @ 14.5A, 10V | 3.5V @ 960µA | 96 nC @ 10 V | ±20V | 2127 pF @ 100 V | - | 34W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-FP |
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IRFP4110PBFXKMA1TRENCH >=100V PG-TO247-3 Infineon Technologies |
929 | - |
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规格书 |
HEXFET® | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 180A (Tc) | 10V | 4.5mOhm @ 75A, 10V | 4V @ 250µA | 210 nC @ 10 V | ±20V | 9620 pF @ 50 V | - | 370W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247AC |
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IPT60R102G7XTMA1MOSFET N-CH 600V 23A 8HSOF Infineon Technologies |
2,294 | - |
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规格书 |
CoolMOS™ G7 | 8-PowerSFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 23A (Tc) | 10V | 102mOhm @ 7.8A, 10V | 4V @ 390µA | 34 nC @ 10 V | ±20V | 1320 pF @ 400 V | - | 141W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-HSOF-8-2 |
