上传BOM
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
全部重置
应用所有
结果:
| 图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SPW24N60C3FKSA1MOSFET N-CH 650V 24.3A TO247-3 Infineon Technologies |
228 | - |
|
规格书 |
CoolMOS™ | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 24.3A (Tc) | 10V | 160mOhm @ 15.4A, 10V | 3.9V @ 1.2mA | 135 nC @ 10 V | ±20V | 3000 pF @ 25 V | - | 240W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO247-3-1 |
|
IPA95R130PFD7XKSA1MOSFET N-CH 950V 13.9A TO220-3 Infineon Technologies |
452 | - |
|
规格书 |
CoolMOS™ | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 950 V | 13.9A (Tc) | 10V | 130mOhm @ 25.1A, 10V | 3.5V @ 1.25mA | 141 nC @ 10 V | ±20V | 4170 pF @ 400 V | - | 33W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220 Full Pack |
|
|
IPTC054N15NM5ATMA1OPTIMOS 5 POWER MOSFET Infineon Technologies |
1,776 | - |
|
规格书 |
OptiMOS™ 5 | 16-PowerSOP Module | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 17.5A (Ta), 143A (Tc) | 8V, 10V | 5.4mOhm @ 50A, 10V | 4.6V @ 191µA | 73 nC @ 10 V | ±20V | 5700 pF @ 75 V | - | 3.8W (Ta), 250W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-HDSOP-16-2 |
.jpg)
|
AUIRFS8409-7TRLMOSFET N-CH 40V 240A D2PAK Infineon Technologies |
164 | - |
|
规格书 |
HEXFET® | TO-263-7, D2PAK (6 Leads + Tab) | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 240A (Tc) | 10V | 0.75mOhm @ 100A, 10V | 3.9V @ 250µA | 460 nC @ 10 V | ±20V | 13975 pF @ 25 V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK (7-Lead) |
|
IPW65R110CFDFKSA2MOSFET N-CH 650V 31.2A TO247-3 Infineon Technologies |
200 | - |
|
规格书 |
CoolMOS™ CFD2 | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 31.2A (Tc) | 10V | 110mOhm @ 12.7A, 10V | 4.5V @ 1.3mA | 118 nC @ 10 V | ±20V | 3240 pF @ 100 V | - | 277.8W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO247-3-41 |
|
AUIRFSA8409-7TRLMOSFET N-CH 40V 523A D2PAK Infineon Technologies |
1,471 | - |
|
规格书 |
HEXFET® | TO-263-7, D2PAK (6 Leads + Tab) | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 523A (Tc) | 10V | 0.69mOhm @ 100A, 10V | 3.9V @ 250µA | 460 nC @ 10 V | ±20V | 13975 pF @ 25 V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PG-TO263-7 |
|
IPP65R060CFD7XKSA1650V FET COOLMOS TO247 Infineon Technologies |
314 | - |
|
规格书 |
CoolMOS™ CFD7 | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 36A (Tc) | 10V | 60mOhm @ 16.4A, 10V | 4.5V @ 860µA | 68 nC @ 10 V | ±20V | 3288 pF @ 400 V | - | 171W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-3-1 |
|
IPP220N25NFDAKSA1MOSFET N-CH 250V 61A TO220-3 Infineon Technologies |
903 | - |
|
规格书 |
OptiMOS™ | TO-220-3 | Tube | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 250 V | 61A (Tc) | 10V | 22mOhm @ 61A, 10V | 4V @ 270µA | 86 nC @ 10 V | ±20V | 7076 pF @ 125 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3 |
|
|
IPP60R040S7XKSA1HIGH POWER_NEW PG-TO220-3 Infineon Technologies |
274 | - |
|
规格书 |
CoolMOS™ | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 13A (Tc) | 12V | 40mOhm @ 13A, 12V | 4.5V @ 790µA | 83 nC @ 12 V | ±20V | 3127 pF @ 300 V | - | 245W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-3 |
|
IPB017N08N5ATMA1MOSFET N-CH 80V 120A D2PAK Infineon Technologies |
2,137 | - |
|
规格书 |
OptiMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 120A (Tc) | 6V, 10V | 1.7mOhm @ 100A, 10V | 3.8V @ 280µA | 223 nC @ 10 V | ±20V | 16900 pF @ 40 V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-3 |
