上传BOM
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部重置
应用所有
结果:
| 图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IPI076N15N5AKSA1MV POWER MOS Infineon Technologies |
426 | - |
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规格书 |
OptiMOS™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 112A (Tc) | 8V, 10V | 7.6mOhm @ 56A, 10V | 4.6V @ 160µA | 61 nC @ 10 V | ±20V | 4700 pF @ 75 V | - | 214W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO262-3 |
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IPP023NE7N3GXKSA1MOSFET N-CH 75V 120A TO220-3 Infineon Technologies |
760 | - |
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规格书 |
OptiMOS™ | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 75 V | 120A (Tc) | 10V | 2.3mOhm @ 100A, 10V | 3.8V @ 273µA | 206 nC @ 10 V | ±20V | 14400 pF @ 37.5 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3-1 |
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IPA60R099P6XKSA1MOSFET N-CH 600V 37.9A TO220-FP Infineon Technologies |
318 | - |
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规格书 |
CoolMOS™ P6 | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 37.9A (Tc) | 10V | 99mOhm @ 14.5A, 10V | 4.5V @ 1.21mA | 70 nC @ 10 V | ±20V | 3330 pF @ 100 V | - | 34W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-FP |
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IRLP3034PBFMOSFET N-CH 40V 195A TO247AC Infineon Technologies |
444 | - |
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规格书 |
HEXFET® | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 195A (Tc) | 4.5V, 10V | 1.7mOhm @ 195A, 10V | 2.5V @ 250µA | 162 nC @ 4.5 V | ±20V | 10315 pF @ 25 V | - | 341W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247AC |
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IPB100N10S305ATMA1MOSFET N-CH 100V 100A TO263-3 Infineon Technologies |
1,382 | - |
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规格书 |
OptiMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 100 V | 100A (Tc) | 10V | 4.8mOhm @ 100A, 10V | 4V @ 240µA | 176 nC @ 10 V | ±20V | 11570 pF @ 25 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-3-2 |
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IPL65R099C7AUMA1MOSFET N-CH 650V 21A 4VSON Infineon Technologies |
9,121 | - |
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规格书 |
CoolMOS™ C7 | 4-PowerTSFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 21A (Tc) | 10V | 99mOhm @ 5.9A, 10V | 4V @ 590µA | 45 nC @ 10 V | ±20V | 2140 pF @ 400 V | - | 128W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | PG-VSON-4 |
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IPP60R060P7XKSA1MOSFET N-CH 600V 48A TO220-3 Infineon Technologies |
500 | - |
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规格书 |
CoolMOS™ P7 | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 48A (Tc) | 10V | 60mOhm @ 15.9A, 10V | 4V @ 800µA | 67 nC @ 10 V | ±20V | 2895 pF @ 400 V | - | 164W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-3 |
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IPB020NE7N3GATMA1MOSFET N-CH 75V 120A D2PAK Infineon Technologies |
7,434 | - |
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规格书 |
OptiMOS™ 3 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 75 V | 120A (Tc) | 10V | 2mOhm @ 100A, 10V | 3.8V @ 273µA | 206 nC @ 10 V | ±20V | 14400 pF @ 37.5 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-3 |
|
IPT054N15N5ATMA1TRENCH >=100V PG-HSOF-8 Infineon Technologies |
1,600 | - |
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规格书 |
OptiMOS™ | 8-PowerSFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 143A (Tc) | 8V, 10V | 5.4mOhm @ 50A, 10V | 4.6V @ 181µA | 69 nC @ 10 V | ±20V | 5300 pF @ 75 V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-HSOF-8 |
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IPT60R075CFD7XTMA1MOSFET N-CH 600V 33A 8HSOF Infineon Technologies |
1,109 | - |
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规格书 |
CoolMOS™ CFD7 | 8-PowerSFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 33A (Tc) | 10V | 75mOhm @ 11.4A, 10V | 4.5V @ 570µA | 51 nC @ 10 V | ±20V | 2103 pF @ 400 V | - | 188W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-HSOF-8-2 |
