上传BOM
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部重置
应用所有
结果:
| 图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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SPA15N60C3XKSA1MOSFET N-CH 650V 15A TO220-FP Infineon Technologies |
211 | - |
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规格书 |
CoolMOS™ | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 15A (Tc) | 10V | 280mOhm @ 9.4A, 10V | 3.9V @ 675µA | 63 nC @ 10 V | ±20V | 1660 pF @ 25 V | - | 34W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-3-31 |
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IPP016N08NF2SAKMA1TRENCH 40<-<100V Infineon Technologies |
482 | - |
|
规格书 |
StrongIRFET™ 2 | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 35A (Ta), 196A (Tc) | 6V, 10V | 1.6mOhm @ 100A, 10V | 3.8V @ 267µA | 255 nC @ 10 V | ±20V | 12000 pF @ 40 V | - | 3.8W (Ta), 300W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3 |
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IPP014N06NF2SAKMA2TRENCH 40<-<100V PG-TO220-3 Infineon Technologies |
1,000 | - |
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规格书 |
StrongIRFET™ | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 39A (Ta), 198A (Tc) | 6V, 10V | 1.4mOhm @ 100A, 10V | 3.3V @ 246µA | 305 nC @ 10 V | ±20V | 13800 pF @ 30 V | - | 3.8W (Ta), 300W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3-U05 |
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IPB65R190CFDAATMA1MOSFET N-CH 650V 17.5A D2PAK Infineon Technologies |
1,182 | - |
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规格书 |
CoolMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 17.5A (Tc) | 10V | 190mOhm @ 7.3A, 10V | 4.5V @ 700µA | 68 nC @ 10 V | ±20V | 1850 pF @ 100 V | - | 151W (Tc) | -40°C ~ 150°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PG-TO263-3 |
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IPF024N10NF2SATMA1TRENCH >=100V Infineon Technologies |
729 | - |
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规格书 |
StrongIRFET™ 2 | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 227A (Tc) | 6V, 10V | 2.4mOhm @ 100A, 10V | 3.8V @ 169µA | 154 nC @ 10 V | ±20V | 7300 pF @ 50 V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-7-14 |
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IPB026N10NF2SATMA1TRENCH >=100V Infineon Technologies |
2,024 | - |
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规格书 |
StrongIRFET™ 2 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 162A (Tc) | 6V, 10V | 2.65mOhm @ 100A, 10V | 3.8V @ 169µA | 154 nC @ 10 V | ±20V | 7300 pF @ 50 V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-3 |
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IPB016N06L3GATMA1MOSFET N-CH 60V 180A TO263-7 Infineon Technologies |
9,298 | - |
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规格书 |
OptiMOS™ | TO-263-7, D2PAK (6 Leads + Tab) | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 180A (Tc) | 4.5V, 10V | 1.6mOhm @ 100A, 10V | 2.2V @ 196µA | 166 nC @ 4.5 V | ±20V | 28000 pF @ 30 V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-7 |
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SPB21N50C3ATMA1MOSFET N-CH 560V 21A TO263-3 Infineon Technologies |
2,683 | - |
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规格书 |
CoolMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 560 V | 21A (Tc) | 10V | 190mOhm @ 13.1A, 10V | 3.9V @ 1mA | 95 nC @ 10 V | ±20V | 2400 pF @ 25 V | - | 208W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TO263-3-2 |
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IPB65R150CFDATMA2MOSFET N-CH 650V 22.4A TO263-3 Infineon Technologies |
1,327 | - |
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规格书 |
CoolMOS™ CFD2 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 22.4A (Tc) | 10V | 150mOhm @ 9.3A, 10V | 4.5V @ 900µA | 86 nC @ 10 V | ±20V | 2340 pF @ 100 V | - | 195.3W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TO263-3 |
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IPF017N08NF2SATMA1TRENCH 40<-<100V PG-TO263-7 Infineon Technologies |
1,455 | - |
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规格书 |
StrongIRFET™ 2 | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 259A (Tc) | 6V, 10V | 1.7mOhm @ 100A, 10V | 3.8V @ 194µA | 186 nC @ 10 V | ±20V | 8700 pF @ 40 V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-7-14 |
