上传BOM
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
全部重置
应用所有
结果:
| 图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IRFS3004TRL7PPMOSFET N-CH 40V 240A D2PAK Infineon Technologies |
6,549 | - |
|
规格书 |
HEXFET® | TO-263-7, D2PAK (6 Leads + Tab), TO-263CB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 240A (Tc) | 10V | 1.25mOhm @ 195A, 10V | 4V @ 250µA | 240 nC @ 10 V | ±20V | 9130 pF @ 25 V | - | 380W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK (7-Lead) |
|
IPP65R125C7XKSA1MOSFET N-CH 650V 18A TO220-3 Infineon Technologies |
898 | - |
|
规格书 |
CoolMOS™ C7 | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 18A (Tc) | 10V | 125mOhm @ 8.9A, 10V | 4V @ 440µA | 35 nC @ 10 V | ±20V | 1670 pF @ 400 V | - | 101W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-3 |
|
|
IPP65R110CFD7XKSA1HIGH POWER_NEW Infineon Technologies |
474 | - |
|
规格书 |
CoolMOS™ CFD7 | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 22A (Tc) | 10V | 110mOhm @ 9.7A, 10V | 4.5V @ 480µA | 41 nC @ 10 V | ±20V | 1942 pF @ 400 V | - | 114W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-3 |
|
IPP100N12S305AKSA1MOSFET N-CHANNEL_100+ Infineon Technologies |
6,390 | - |
|
规格书 |
OptiMOS™ | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 120 V | 100A (Tc) | 10V | 5.1mOhm @ 100A, 10V | 4V @ 240µA | 185 nC @ 10 V | ±20V | 11570 pF @ 25 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | PG-TO220-3-1 |
|
|
IPF010N06NF2SATMA1TRENCH 40<-<100V Infineon Technologies |
330 | - |
|
规格书 |
StrongIRFET™2 | TO-263-7, D2PAK (6 Leads + Tab) | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 44A (Ta), 293A (Tc) | 6V, 10V | 1.05mOhm @ 100A, 10V | 3.3V @ 246µA | 305 nC @ 10 V | ±20V | 13800 pF @ 30 V | - | 3.8W (Ta), 300W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-7-U02 |
|
IRFB4137PBFMOSFET N-CH 300V 38A TO220 Infineon Technologies |
908 | - |
|
规格书 |
HEXFET® | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 300 V | 38A (Tc) | 10V | 69mOhm @ 24A, 10V | 5V @ 250µA | 125 nC @ 10 V | ±20V | 5168 pF @ 50 V | - | 341W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220 |
|
|
IPB016N08NF2SATMA1TRENCH 40<-<100V PG-TO263-3 Infineon Technologies |
222 | - |
|
规格书 |
StrongIRFET™ 2 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 170A (Tc) | 6V, 10V | 1.65mOhm @ 100A, 10V | 3.8V @ 267µA | 255 nC @ 10 V | ±20V | 12000 pF @ 40 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-3 |
|
IPB60R080P7ATMA1MOSFET N-CH 600V 37A D2PAK Infineon Technologies |
1,559 | - |
|
规格书 |
CoolMOS™ P7 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 37A (Tc) | 10V | 80mOhm @ 11.8A, 10V | 4V @ 590µA | 51 nC @ 10 V | ±20V | 2180 pF @ 400 V | - | 129W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TO263-3 |
|
|
IPP60R080P7XKSA1MOSFET N-CH 650V 37A TO220-3 Infineon Technologies |
237 | - |
|
规格书 |
CoolMOS™ P7 | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 37A (Tc) | 10V | 80mOhm @ 11.8A, 10V | 4V @ 590µA | 51 nC @ 10 V | ±20V | 2180 pF @ 400 V | - | 129W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-3 |
|
|
IPP120N08S403AKSA1MOSFET N-CH 80V 120A TO220-3 Infineon Technologies |
8,103 | - |
|
规格书 |
OptiMOS™ | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 120A (Tc) | 10V | 2.8mOhm @ 100A, 10V | 4V @ 223µA | 167 nC @ 10 V | ±20V | 11550 pF @ 25 V | - | 278W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | PG-TO220-3-1 |
