上传BOM
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部重置
应用所有
结果:
| 图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IPW60R090CFD7XKSA1MOSFET N-CH 600V 25A TO247-3 Infineon Technologies |
238 | - |
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规格书 |
OptiMOS™ | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 25A (Tc) | 10V | 90mOhm @ 11.4A, 10V | 4.5V @ 570µA | 51 nC @ 10 V | ±20V | 2103 pF @ 400 V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO247-3 |
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IPI075N15N3GXKSA1MOSFET N-CH 150V 100A TO262-3 Infineon Technologies |
991 | - |
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规格书 |
OptiMOS™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 100A (Tc) | 8V, 10V | 7.5mOhm @ 100A, 10V | 4V @ 270µA | 93 nC @ 10 V | ±20V | 5470 pF @ 75 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO262-3 |
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IPW65R095C7XKSA1MOSFET N-CH 650V 24A TO247 Infineon Technologies |
1,045 | - |
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规格书 |
CoolMOS™ | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 24A (Tc) | 10V | 95mOhm @ 11.8A, 10V | 4V @ 590µA | 45 nC @ 10 V | ±20V | 2140 pF @ 400 V | - | 128W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO247-3-1 |
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IPB060N15N5ATMA1MOSFET N-CH 150V 136A TO263-7 Infineon Technologies |
2,544 | - |
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规格书 |
OptiMOS™ | TO-263-7, D2PAK (6 Leads + Tab) | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 136A (Tc) | 8V, 10V | 6mOhm @ 68A, 10V | 4.6V @ 180µA | 68 nC @ 10 V | ±20V | 5300 pF @ 75 V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-7-3 |
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IPW65R090CFD7XKSA1HIGH POWER_NEW Infineon Technologies |
153 | - |
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规格书 |
CoolMOS™ CFD7 | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 25A (Tc) | 10V | 90mOhm @ 12.5A, 10V | 4.5V @ 630µA | 53 nC @ 10 V | ±20V | 2513 pF @ 400 V | - | 127W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO247-3 |
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IPB80R290C3AATMA2MOSFET N-CH 800V 17A TO263-3 Infineon Technologies |
8,386 | - |
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规格书 |
CoolMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 17A (Tc) | 10V | 290mOhm @ 11A, 10V | 3.9V @ 1mA | 117 nC @ 10 V | ±20V | 2300 pF @ 100 V | - | 227W (Tc) | -40°C ~ 150°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PG-TO263-3-2 |
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IPDD60R075CFD7XTMA1MOSFET N-CH 600V 40A HDSOP-10 Infineon Technologies |
769 | - |
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规格书 |
CoolMOS™ CFD7 | 10-PowerSOP Module | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 40A (Tc) | - | 75mOhm @ 11.4A, 10V | 4.5V @ 570µA | 51 nC @ 10 V | ±20V | 2102 pF @ 400 V | - | 266W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-HDSOP-10-1 |
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IPB60R070CFD7ATMA1MOSFET N-CH 600V 31A TO263-3 Infineon Technologies |
1,827 | - |
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规格书 |
CoolMOS™ CFD7 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 31A (Tc) | 10V | 70mOhm @ 15.1A, 10V | 4.5V @ 760µA | 67 nC @ 10 V | ±20V | 2721 pF @ 400 V | - | 156W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TO263-3-2 |
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IPT012N06NATMA1MOSFET N-CH 60V 240A 8HSOF Infineon Technologies |
1,330 | - |
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规格书 |
OptiMOS™ | 8-PowerSFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 240A (Tc) | 6V, 10V | 1.2mOhm @ 100A, 10V | 3.3V @ 143µA | 124 nC @ 10 V | ±20V | 9750 pF @ 30 V | - | 214W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-HSOF-8-1 |
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IPP120N20NFDAKSA1MOSFET N-CH 200V 84A TO220-3 Infineon Technologies |
720 | - |
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规格书 |
OptiMOS™ | TO-220-3 | Tube | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 200 V | 84A (Tc) | 10V | 12mOhm @ 84A, 10V | 4V @ 270µA | 87 nC @ 10 V | ±20V | 6650 pF @ 100 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3 |
