上传BOM
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部重置
应用所有
结果:
| 图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IIPC26S3N04X2MA1MOSFET Infineon Technologies |
0 | - |
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- |
- | - | Bulk | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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IIPC63S4N08X2SA1MOSFET Infineon Technologies |
0 | - |
|
- |
- | - | Bulk | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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IPC60R099P7X7SA1MOSFET N-CH BARE DIE Infineon Technologies |
0 | - |
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- |
* | - | Bulk | Discontinued at Digi-Key | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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ISK018NE1LM7ATSA1ISK018NE1LM7AULA1 MOSFET Infineon Technologies |
0 | - |
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规格书 |
OptiMOS™ 7 | 6-PowerVDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 15 V | 30A (Ta), 129A (Tc) | 4.5V, 7V | 1.8mOhm @ 20A, 7V | 2V @ 106µA | 13.6 nC @ 7 V | ±7V | 1600 pF @ 7.5 V | - | 2.1W (Ta), 39W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-VSON-6-1 |
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ISK057N04LM6ATSA1MOSFET N-CH 40V 64A 6VSON Infineon Technologies |
0 | - |
|
规格书 |
OptiMOS™ 6 | 6-PowerVDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 15A (Ta), 64A (Tc) | 4.5V, 10V | 5.75mOhm @ 20A, 10V | 2.3V @ 250µA | 12 nC @ 10 V | ±20V | 870 pF @ 20 V | - | 2.1W (Ta), 39.1W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-VSON-6-1 |
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BSB044N08NN3GXUMA2MOSFET N-CH 80V 18A/90A 2WDSON Infineon Technologies |
0 | - |
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- |
OptiMOS™ 3 | DirectFET™ Isometric ST | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 18A (Ta), 90A (Tc) | 10V | 4.4mOhm @ 30A, 10V | 3.5V @ 97µA | 73 nC @ 10 V | ±20V | 5700 pF @ 40 V | - | 2.2W (Ta), 78W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | MG-WDSON-2 |
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BSF450NE7NH3XUMA2MOSFET N-CH 75V 5A/15A 2WDSON Infineon Technologies |
0 | - |
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- |
OptiMOS™ 3 | DirectFET™ Isometric ST | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 75 V | 5A (Ta), 15A (Tc) | 7V, 10V | 45mOhm @ 8A, 10V | 3.8V @ 8µA | 6 nC @ 10 V | ±20V | 390 pF @ 37.5 V | - | 2.2W (Ta), 18W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | MG-WDSON-2 |
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BSF134N10NJ3GXUMA2MOSFET N-CH 100V 9A/40A 2WDSON Infineon Technologies |
0 | - |
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- |
OptiMOS™ | DirectFET™ Isometric ST | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 9A (Ta), 40A (Tc) | 6V, 10V | 13.4mOhm @ 30A, 10V | 3.5V @ 40µA | 30 nC @ 10 V | ±20V | 2300 pF @ 50 V | - | 2.2W (Ta), 43W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | MG-WDSON-2 |
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IGLT65R055D2GAN TRANSISTOR 650 V G5 Infineon Technologies Canada Inc. |
0 | - |
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- |
CoolGaN™ | 16-PowerSOP Module | Tape & Reel (TR) | Active | N-Channel | GaNFET (Gallium Nitride) | 650 V | 31A (Tc) | - | - | 1.6V @ 2.6mA | 6.6 nC @ 3 V | -10V | 330 pF @ 400 V | - | 104W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-HDSOP-16-8 |
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IGLT65R045D2GAN TRANSISTOR 650 V G5 Infineon Technologies Canada Inc. |
0 | - |
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- |
CoolGaN™ | 16-PowerSOP Module | Tape & Reel (TR) | Active | N-Channel | GaNFET (Gallium Nitride) | 650 V | 38A (Tc) | - | - | 1.6V @ 3.3mA | 8.4 nC @ 3 V | -10V | 420 pF @ 400 V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-HDSOP-16-8 |
