上传BOM
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部重置
应用所有
结果:
| 图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IAUS200N08S5N023ATMA1MOSFET N-CH 80V 200A HSOG-8 Infineon Technologies |
484 | - |
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规格书 |
OptiMOS™ | 8-PowerSMD, Gull Wing | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 200A (Tc) | 6V, 10V | 2.3mOhm @ 100A, 10V | 3.8V @ 130µA | 110 nC @ 10 V | ±20V | 7670 pF @ 40 V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PG-HSOG-8-1 |
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IRF2804STRLPBFMOSFET N-CH 40V 75A D2PAK Infineon Technologies |
2,529 | - |
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规格书 |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 75A (Tc) | 10V | 2mOhm @ 75A, 10V | 4V @ 250µA | 240 nC @ 10 V | ±20V | 6450 pF @ 25 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
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IAUT240N08S5N019ATMA1MOSFET N-CH 80V 240A 8HSOF Infineon Technologies |
822 | - |
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规格书 |
OptiMOS™ 5 | 8-PowerSFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 240A (Tc) | 6V, 10V | 1.9mOhm @ 100A, 10V | 3.8V @ 160µA | 130 nC @ 10 V | ±20V | 9264 pF @ 40 V | - | 230W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-HSOF-8-1 |
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IPP60R199CPXKSA1MOSFET N-CH 650V 16A TO220-3 Infineon Technologies |
404 | - |
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规格书 |
CoolMOS™ | TO-220-3 | Tube | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 650 V | 16A (Tc) | 10V | 199mOhm @ 9.9A, 10V | 3.5V @ 660µA | 43 nC @ 10 V | ±20V | 1520 pF @ 100 V | - | 139W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-3 |
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IPLU300N04S41R1XTMA1MOSFET N-CH 40V 300A 8HSOF Infineon Technologies |
7,997 | - |
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规格书 |
OptiMOS™ | 8-PowerSFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 300A (Tc) | 10V | 1.15mOhm @ 100A, 10V | 4V @ 125µA | 151 nC @ 10 V | ±20V | 12090 pF @ 25 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PG-HSOF-8-1 |
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IPA60R160C6XKSA1MOSFET N-CH 600V 23.8A TO220-FP Infineon Technologies |
995 | - |
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规格书 |
CoolMOS™ | TO-220-3 Full Pack | Tube | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 600 V | 23.8A (Tc) | 10V | 160mOhm @ 11.3A, 10V | 3.5V @ 750µA | 75 nC @ 10 V | ±20V | 1660 pF @ 100 V | - | 34W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-FP |
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IPW65R190CFDFKSA2MOSFET N-CH 650V 17.5A TO247-3 Infineon Technologies |
1,271 | - |
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规格书 |
CoolMOS™ CFD2 | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 17.5A (Tc) | 10V | 190mOhm @ 7.3A, 10V | 4.5V @ 700µA | 68 nC @ 10 V | ±20V | 1850 pF @ 100 V | - | 151W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO247-3-41 |
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IPB180N04S400ATMA1MOSFET N-CH 40V 180A TO263-7 Infineon Technologies |
3,937 | - |
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规格书 |
OptiMOS™ | TO-263-7, D2PAK (6 Leads + Tab) | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 180A (Tc) | 10V | 0.98mOhm @ 100A, 10V | 4V @ 230µA | 286 nC @ 10 V | ±20V | 22880 pF @ 25 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-7-3 |
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IST007N04NM6AUMA1MOSFET N-CH 40V 54A/440A HSOF-5 Infineon Technologies |
1,043 | - |
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规格书 |
OptiMOS™ 6 | 5-PowerSFN | Tape & Reel (TR) | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 40 V | 54A (Ta), 440A (Tc) | 6V, 10V | 0.7mOhm @ 100A, 10V | 3.3V @ 250µA | 152 nC @ 10 V | ±20V | 7900 pF @ 20 V | - | 3.8W (Ta), 250W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-HSOF-5-4 |
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SPP21N50C3XKSA1MOSFET N-CH 500V 21A TO220-3 Infineon Technologies |
1,903 | - |
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规格书 |
CoolMOS™ | TO-220-3 | Tube | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 500 V | 21A (Tc) | 10V | 190mOhm @ 13.1A, 10V | 3.9V @ 1mA | 95 nC @ 10 V | ±20V | 2400 pF @ 25 V | - | 208W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-3-1 |
