场效应晶体管(FET)、MOSFET 阵列

    制造商 系列 封装/外壳 包装 产品状态 技术 配置 FET 特性 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装





























































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































    全部重置
    应用所有
    结果:
    图片 型号 库存 价格 数量 规格书 系列 封装/外壳 包装 产品状态 技术 配置 FET 特性 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装
    APTM50TAM65FPG

    APTM50TAM65FPG

    MOSFET 6N-CH 500V 51A SP6-P

    Microchip Technology

    0
    APTM50TAM65FPG

    规格书

    - SP6 Bulk Active MOSFET (Metal Oxide) 6 N-Channel (3-Phase Bridge) - 500V 51A 78mOhm @ 25.5A, 10V 5V @ 2.5mA 140nC @ 10V 7000pF @ 25V 390W -40°C ~ 150°C (TJ) - - Chassis Mount SP6-P
    APTM100A13DG

    APTM100A13DG

    MOSFET 2N-CH 1000V 65A SP6

    Microchip Technology

    0

    -

    - SP6 Bulk Active MOSFET (Metal Oxide) 2 N-Channel (Half Bridge) - 1000V (1kV) 65A 156mOhm @ 32.5A, 10V 5V @ 6mA 562nC @ 10V 15200pF @ 25V 1250W -40°C ~ 150°C (TJ) - - Chassis Mount SP6
    APTM20HM10FG

    APTM20HM10FG

    MOSFET 4N-CH 200V 175A SP6

    Microchip Technology

    0
    APTM20HM10FG

    规格书

    - SP6 Bulk Active MOSFET (Metal Oxide) 4 N-Channel (Full Bridge) - 200V 175A 12mOhm @ 87.5A, 10V 5V @ 5mA 224nC @ 10V 13700pF @ 25V 694W -40°C ~ 150°C (TJ) - - Chassis Mount SP6
    APTM100A13SG

    APTM100A13SG

    MOSFET 2N-CH 1000V 65A SP6

    Microchip Technology

    0
    APTM100A13SG

    规格书

    - SP6 Bulk Active MOSFET (Metal Oxide) 2 N-Channel (Half Bridge) - 1000V (1kV) 65A 156mOhm @ 32.5A, 10V 5V @ 6mA 562nC @ 10V 15200pF @ 25V 1250W -40°C ~ 150°C (TJ) - - Chassis Mount SP6
    APTM100TA35FPG

    APTM100TA35FPG

    MOSFET 6N-CH 1000V 22A SP6-P

    Microchip Technology

    0
    APTM100TA35FPG

    规格书

    - SP6 Bulk Active MOSFET (Metal Oxide) 6 N-Channel (3-Phase Bridge) - 1000V (1kV) 22A 420mOhm @ 11A, 10V 5V @ 2.5mA 186nC @ 10V 5200pF @ 25V 390W -40°C ~ 150°C (TJ) - - Chassis Mount SP6-P
    MSCSM70VM10C4AG

    MSCSM70VM10C4AG

    MOSFET 2N-CH 700V 238A SP4

    Microchip Technology

    1
    MSCSM70VM10C4AG

    规格书

    - Module Tube Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 700V 238A (Tc) 9.5mOhm @ 80A, 20V 2.4V @ 8mA 430nC @ 20V 9000pF @ 700V 674W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount SP4
    APTM20DUM04G

    APTM20DUM04G

    MOSFET 2N-CH 200V 372A SP6

    Microchip Technology

    0
    APTM20DUM04G

    规格书

    - SP6 Bulk Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 200V 372A 5mOhm @ 186A, 10V 5V @ 10mA 560nC @ 10V 28900pF @ 25V 1250W -40°C ~ 150°C (TJ) - - Chassis Mount SP6
    APTM50AM19FG

    APTM50AM19FG

    MOSFET 2N-CH 500V 163A SP6

    Microchip Technology

    0
    APTM50AM19FG

    规格书

    - SP6 Bulk Active MOSFET (Metal Oxide) 2 N-Channel (Half Bridge) - 500V 163A 22.5mOhm @ 81.5A, 10V 5V @ 10mA 492nC @ 10V 22400pF @ 25V 1136W -40°C ~ 150°C (TJ) - - Chassis Mount SP6
    APTM10DUM02G

    APTM10DUM02G

    MOSFET 2N-CH 100V 495A SP6

    Microchip Technology

    0
    APTM10DUM02G

    规格书

    - SP6 Bulk Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 100V 495A 2.5mOhm @ 200A, 10V 4V @ 10mA 1360nC @ 10V 40000pF @ 25V 1250W -40°C ~ 150°C (TJ) - - Chassis Mount SP6
    APTM120A20DG

    APTM120A20DG

    MOSFET 2N-CH 1200V 50A SP6

    Microchip Technology

    0
    APTM120A20DG

    规格书

    - SP6 Bulk Active MOSFET (Metal Oxide) 2 N-Channel (Half Bridge) - 1200V (1.2kV) 50A 240mOhm @ 25A, 10V 5V @ 6mA 600nC @ 10V 15200pF @ 25V 1250W -40°C ~ 150°C (TJ) - - Chassis Mount SP6
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