场效应晶体管(FET)、MOSFET 阵列

    制造商 系列 封装/外壳 包装 产品状态 技术 配置 FET 特性 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装





























































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































    全部重置
    应用所有
    结果:
    图片 型号 库存 价格 数量 规格书 系列 封装/外壳 包装 产品状态 技术 配置 FET 特性 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装
    APTM50HM75FTG

    APTM50HM75FTG

    MOSFET 4N-CH 500V 46A SP4

    Microchip Technology

    0
    APTM50HM75FTG

    规格书

    - SP4 Bulk Active MOSFET (Metal Oxide) 4 N-Channel (Full Bridge) - 500V 46A 90mOhm @ 23A, 10V 5V @ 2.5mA 123nC @ 10V 5600pF @ 25V 357W -40°C ~ 150°C (TJ) - - Chassis Mount SP4
    APTM20DUM08TG

    APTM20DUM08TG

    MOSFET 2N-CH 200V 208A SP4

    Microchip Technology

    0
    APTM20DUM08TG

    规格书

    - SP4 Bulk Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 200V 208A 10mOhm @ 104A, 10V 5V @ 5mA 280nC @ 10V 14400pF @ 25V 781W -40°C ~ 150°C (TJ) - - Chassis Mount SP4
    APTM20HM20STG

    APTM20HM20STG

    MOSFET 4N-CH 200V 89A SP4

    Microchip Technology

    0
    APTM20HM20STG

    规格书

    - SP4 Bulk Active MOSFET (Metal Oxide) 4 N-Channel (Full Bridge) - 200V 89A 24mOhm @ 44.5A, 10V 5V @ 2.5mA 112nC @ 10V 6850pF @ 25V 357W -40°C ~ 150°C (TJ) - - Chassis Mount SP4
    APTM100H35FT3G

    APTM100H35FT3G

    MOSFET 4N-CH 1000V 22A SP3

    Microchip Technology

    0
    APTM100H35FT3G

    规格书

    - SP3 Bulk Active MOSFET (Metal Oxide) 4 N-Channel (Full Bridge) - 1000V (1kV) 22A 420mOhm @ 11A, 10V 5V @ 2.5mA 186nC @ 10V 5200pF @ 25V 390W -40°C ~ 150°C (TJ) - - Chassis Mount SP3
    APTC80TA15PG

    APTC80TA15PG

    MOSFET 6N-CH 800V 28A SP6-P

    Microchip Technology

    0
    APTC80TA15PG

    规格书

    - SP6 Bulk Active MOSFET (Metal Oxide) 6 N-Channel (3-Phase Bridge) - 800V 28A 150mOhm @ 14A, 10V 3.9V @ 2mA 180nC @ 10V 4507pF @ 25V 277W -40°C ~ 150°C (TJ) - - Chassis Mount SP6-P
    APTC80TDU15PG

    APTC80TDU15PG

    MOSFET 6N-CH 800V 28A SP6-P

    Microchip Technology

    0
    APTC80TDU15PG

    规格书

    - SP6 Bulk Active MOSFET (Metal Oxide) 6 N-Channel (3-Phase Bridge) - 800V 28A 150mOhm @ 14A, 10V 3.9V @ 2mA 180nC @ 10V 4507pF @ 25V 277W -40°C ~ 150°C (TJ) - - Chassis Mount SP6-P
    APTM50HM75STG

    APTM50HM75STG

    MOSFET 4N-CH 500V 46A SP4

    Microchip Technology

    0
    APTM50HM75STG

    规格书

    - SP4 Bulk Active MOSFET (Metal Oxide) 4 N-Channel (Full Bridge) - 500V 46A 90mOhm @ 23A, 10V 5V @ 2.5mA 123nC @ 10V 5600pF @ 25V 357W -40°C ~ 150°C (TJ) - - Chassis Mount SP4
    APTC60AM35SCTG

    APTC60AM35SCTG

    MOSFET 2N-CH 600V 72A SP4

    Microchip Technology

    0
    APTC60AM35SCTG

    规格书

    - SP4 Bulk Active MOSFET (Metal Oxide) 2 N-Channel (Half Bridge) - 600V 72A 35mOhm @ 36A, 10V 3.9V @ 2mA 518nC @ 10V 14000pF @ 25V 416W -40°C ~ 150°C (TJ) - - Chassis Mount SP4
    MSCSM120HM50CT3AG

    MSCSM120HM50CT3AG

    MOSFET 4N-CH 1200V 55A SP3F

    Microchip Technology

    0
    MSCSM120HM50CT3AG

    规格书

    - Module Tube Active Silicon Carbide (SiC) 4 N-Channel - 1200V (1.2kV) 55A (Tc) 50mOhm @ 40A, 20V 2.7V @ 1mA 137nC @ 20V 1990pF @ 1000V 245W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount SP3F
    APTM20AM10STG

    APTM20AM10STG

    MOSFET 2N-CH 200V 175A SP4

    Microchip Technology

    0
    APTM20AM10STG

    规格书

    - SP4 Bulk Active MOSFET (Metal Oxide) 2 N-Channel (Half Bridge) - 200V 175A 12mOhm @ 87.5A, 10V 5V @ 5mA 224nC @ 10V 13700pF @ 25V 694W -40°C ~ 150°C (TJ) - - Chassis Mount SP4
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