图片 | 型号 | 库存 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 配置 | FET 特性 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 输入电容 (Ciss)(最大值)@ Vds | 功率 - 最大值 | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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MSCSM120X10CTYZBNMGMOSFET 6N-CH 1200V 28A Microchip Technology |
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- | Module | Bulk | Active | Silicon Carbide (SiC) | 6 N-Channel (3-Phase Bridge) | - | 1200V (1.2kV) | 28A (Tc), 49A (Tc) | 100mOhm @ 15A, 20V, 50mOhm @ 40A, 20V | 2.8V @ 1mA, 2.7V @ 2mA | 64nC @ 20V, 137nC @ 20V | 838pF @ 1000V, 1990pF @ 1000V | 116W (Tc), 196W (Tc) | -55°C ~ 175°C (TJ) | - | - | Chassis Mount | - |
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MSCSM70XM45CTYZBNMGMOSFET 6N-CH 700V 52A Microchip Technology |
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- | Module | Bulk | Active | Silicon Carbide (SiC) | 6 N-Channel (3-Phase Bridge) | - | 700V | 52A (Tc), 110A (Tc) | 44mOhm @ 30A, 20V, 19mOhm @ 40A, 20V | 2.7V @ 2mA, 2.4V @ 4mA | 99nC @ 20V, 215nC @ 20V | 2010pF @ 700V, 4500pF @ 700V | 141W (Tc), 292W (Tc) | -55°C ~ 175°C (TJ) | - | - | Chassis Mount | - |
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DRF1510-CLASS-DRF MOSFET (VDMOS) FULL-BRIDGE 13 Microchip Technology |
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- | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |