场效应晶体管(FET)、MOSFET 阵列

    制造商 系列 封装/外壳 包装 产品状态 技术 配置 FET 特性 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装





























































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































    全部重置
    应用所有
    结果:
    图片 型号 库存 价格 数量 规格书 系列 封装/外壳 包装 产品状态 技术 配置 FET 特性 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装
    APTM120A29FTG

    APTM120A29FTG

    MOSFET 2N-CH 1200V 34A SP4

    Microchip Technology

    0
    APTM120A29FTG

    规格书

    - SP4 Bulk Active MOSFET (Metal Oxide) 2 N-Channel (Half Bridge) - 1200V (1.2kV) 34A 348mOhm @ 17A, 10V 5V @ 5mA 374nC @ 10V 10300pF @ 25V 780W -40°C ~ 150°C (TJ) - - Chassis Mount SP4
    APTM50HM75SCTG

    APTM50HM75SCTG

    MOSFET 4N-CH 500V 46A SP4

    Microchip Technology

    0

    -

    - SP4 Bulk Active Silicon Carbide (SiC) 4 N-Channel (Full Bridge) - 500V 46A 90mOhm @ 23A, 10V 5V @ 2.5mA 123nC @ 10V 5590pF @ 25V 357W -40°C ~ 150°C (TJ) - - Chassis Mount SP4
    APTC60HM45SCTG

    APTC60HM45SCTG

    MOSFET 4N-CH 600V 49A SP4

    Microchip Technology

    0
    APTC60HM45SCTG

    规格书

    CoolMOS™ SP4 Bulk Active MOSFET (Metal Oxide) 4 N-Channel (Full Bridge) - 600V 49A 45mOhm @ 22.5A, 10V 3.9V @ 3mA 150nC @ 10V 7200pF @ 25V 250W -40°C ~ 150°C (TJ) - - Chassis Mount SP4
    APTC60HM24T3G

    APTC60HM24T3G

    MOSFET 4N-CH 600V 95A SP3

    Microchip Technology

    0
    APTC60HM24T3G

    规格书

    CoolMOS™ SP3 Tray Active MOSFET (Metal Oxide) 4 N-Channel (Full Bridge) - 600V 95A 24mOhm @ 47.5A, 10V 3.9V @ 5mA 300nC @ 10V 14400pF @ 25V 462W -40°C ~ 150°C (TJ) - - Chassis Mount SP3
    APTC60AM24SCTG

    APTC60AM24SCTG

    MOSFET 2N-CH 600V 95A SP4

    Microchip Technology

    0
    APTC60AM24SCTG

    规格书

    CoolMOS™ SP4 Bulk Active MOSFET (Metal Oxide) 2 N Channel (Phase Leg) - 600V 95A 24mOhm @ 47.5A, 10V 3.9V @ 5mA 300nC @ 10V 14400pF @ 25V 462W -40°C ~ 150°C (TJ) - - Chassis Mount SP4
    APTM100H45SCTG

    APTM100H45SCTG

    MOSFET 4N-CH 1000V 18A SP4

    Microchip Technology

    1
    APTM100H45SCTG

    规格书

    POWER MOS 7® SP4 Bulk Active MOSFET (Metal Oxide) 4 N-Channel (Full Bridge) - 1000V (1kV) 18A 540mOhm @ 9A, 10V 5V @ 2.5mA 154nC @ 10V 4350pF @ 25V 357W -40°C ~ 150°C (TJ) - - Chassis Mount SP4
    MSCSM120AM16CT1AG

    MSCSM120AM16CT1AG

    MOSFET 2N-CH 1200V 173A SP1F

    Microchip Technology

    0
    MSCSM120AM16CT1AG

    规格书

    - Module Tube Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 1200V (1.2kV) 173A (Tc) 16mOhm @ 80A, 20V 2.8V @ 2mA 464nC @ 20V 6040pF @ 1000V 745W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount SP1F
    APTM50DHM38G

    APTM50DHM38G

    MOSFET 2N-CH 500V 90A SP6

    Microchip Technology

    0
    APTM50DHM38G

    规格书

    - SP6 Bulk Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Asymmetrical - 500V 90A 45mOhm @ 45A, 10V 5V @ 5mA 246nC @ 10V 11200pF @ 25V 694W -40°C ~ 150°C (TJ) - - Chassis Mount SP6
    APTM50AM38SCTG

    APTM50AM38SCTG

    MOSFET 2N-CH 500V 90A SP4

    Microchip Technology

    0

    -

    - SP4 Bulk Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) - 500V 90A 45mOhm @ 45A, 10V 5V @ 5mA 246nC @ 10V 11200pF @ 25V 694W -40°C ~ 150°C (TJ) - - Chassis Mount SP4
    MSCC60AM23C4AG

    MSCC60AM23C4AG

    MOSFET 2N-CH 600V 81A SP4

    Microchip Technology

    0
    MSCC60AM23C4AG

    规格书

    - Module Tube Active MOSFET (Metal Oxide) 2 N-Channel - 600V 81A (Tc) - - - - - - - - Chassis Mount SP4
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