场效应晶体管(FET)、MOSFET 阵列

    制造商 系列 封装/外壳 包装 产品状态 技术 配置 FET 特性 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装





























































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































    全部重置
    应用所有
    结果:
    图片 型号 库存 价格 数量 规格书 系列 封装/外壳 包装 产品状态 技术 配置 FET 特性 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装
    MSCSM70TAM10CTPAG

    MSCSM70TAM10CTPAG

    MOSFET 6N-CH 700V 238A SP6-P

    Microchip Technology

    0
    MSCSM70TAM10CTPAG

    规格书

    - Module Tube Active Silicon Carbide (SiC) 6 N-Channel (3-Phase Bridge) - 700V 238A (Tc) 9.5mOhm @ 80A, 20V 2.4V @ 8mA 430nC @ 20V 9000pF @ 700V 674W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount SP6-P
    MSCSM70AM025CT6AG

    MSCSM70AM025CT6AG

    MOSFET 700V 538A SP6C

    Microchip Technology

    0
    MSCSM70AM025CT6AG

    规格书

    - Module Tube Active Silicon Carbide (SiC) - - 700V 538A (Tc) - - - - - - - - Chassis Mount SP6C
    MSCSM120TAM16CTPAG

    MSCSM120TAM16CTPAG

    MOSFET 6N-CH 1200V 171A SP6-P

    Microchip Technology

    0
    MSCSM120TAM16CTPAG

    规格书

    - Module Tube Active Silicon Carbide (SiC) 6 N-Channel (3-Phase Bridge) - 1200V (1.2kV) 171A (Tc) 16mOhm @ 80A, 20V 2.8V @ 2mA 464nC @ 20V 6040pF @ 1000V 728W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount SP6-P
    MSCSM120HM083CAG

    MSCSM120HM083CAG

    SIC MOSFET

    Microchip Technology

    0

    -

    - - Bulk Active - - - - - - - - - - - - - - -
    MSCSM120AM042CT6AG

    MSCSM120AM042CT6AG

    MOSFET 2N-CH 1200V 495A SP6C

    Microchip Technology

    0
    MSCSM120AM042CT6AG

    规格书

    - Module Tube Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 1200V (1.2kV) 495A (Tc) 5.2mOhm @ 240A, 20V 2.8V @ 6mA 1392nC @ 20V 18.1pF @ 1000V 2.031kW (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount SP6C
    MSCSM70AM025CT6LIAG

    MSCSM70AM025CT6LIAG

    MOSFET 2N-CH 700V 689A SP6C LI

    Microchip Technology

    0
    MSCSM70AM025CT6LIAG

    规格书

    - Module Tube Active Silicon Carbide (SiC) 2 N-Channel - 700V 689A (Tc) 3.2mOhm @ 240A, 20V 2.4V @ 24mA (Typ) 1290nC @ 20V 27000pF @ 700V 1882W (Tc) - - - Chassis Mount SP6C LI
    MSCSM70HM038CAG

    MSCSM70HM038CAG

    SIC MOSFET

    Microchip Technology

    0

    -

    - - Bulk Active - - - - - - - - - - - - - - -
    MSCSM120HM063CAG

    MSCSM120HM063CAG

    SIC MOSFET

    Microchip Technology

    0

    -

    - - Bulk Active - - - - - - - - - - - - - - -
    APTC60AM18SCG

    APTC60AM18SCG

    MOSFET 2N-CH 600V 143A SP6

    Microchip Technology

    0
    APTC60AM18SCG

    规格书

    CoolMOS™ SP6 Bulk Obsolete MOSFET (Metal Oxide) 2 N-Channel (Half Bridge) - 600V 143A 18mOhm @ 71.5A, 10V 3.9V @ 4mA 1036nC @ 10V 28000pF @ 25V 833W -40°C ~ 150°C (TJ) - - Chassis Mount SP6
    APTC60HM35T3G

    APTC60HM35T3G

    MOSFET 4N-CH 600V 72A SP3

    Microchip Technology

    0
    APTC60HM35T3G

    规格书

    - SP3 Bulk Obsolete MOSFET (Metal Oxide) 4 N-Channel (Full Bridge) - 600V 72A 35mOhm @ 72A, 10V 3.9V @ 5.4mA 518nC @ 10V 14000pF @ 25V 416W -40°C ~ 150°C (TJ) - - Chassis Mount SP3
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