场效应晶体管(FET)、MOSFET 阵列

    制造商 系列 封装/外壳 包装 产品状态 技术 配置 FET 特性 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装





























































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































    全部重置
    应用所有
    结果:
    图片 型号 库存 价格 数量 规格书 系列 封装/外壳 包装 产品状态 技术 配置 FET 特性 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装
    APTM50HM38FG

    APTM50HM38FG

    MOSFET 4N-CH 500V 90A SP6

    Microchip Technology

    0
    APTM50HM38FG

    规格书

    - SP6 Bulk Active MOSFET (Metal Oxide) 4 N-Channel (Full Bridge) - 500V 90A 45mOhm @ 45A, 10V 5V @ 5mA 246nC @ 10V 11200pF @ 25V 694W -40°C ~ 150°C (TJ) - - Chassis Mount SP6
    APTM120A20SG

    APTM120A20SG

    MOSFET 2N-CH 1200V 50A SP6

    Microchip Technology

    0
    APTM120A20SG

    规格书

    - SP6 Bulk Active MOSFET (Metal Oxide) 2 N-Channel (Half Bridge) - 1200V (1.2kV) 50A 240mOhm @ 25A, 10V 5V @ 6mA 600nC @ 10V 15200pF @ 25V 1250W -40°C ~ 150°C (TJ) - - Chassis Mount SP6
    MSCC60VRM45TAPG

    MSCC60VRM45TAPG

    MOSFET 600V 40A SP6-P

    Microchip Technology

    0
    MSCC60VRM45TAPG

    规格书

    - Module Tube Active - - - 600V 40A (Tc) - - - - - - - - Chassis Mount SP6-P
    APTM120DU15G

    APTM120DU15G

    MOSFET 2N-CH 1200V 60A SP6

    Microchip Technology

    0
    APTM120DU15G

    规格书

    - SP6 Bulk Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 1200V (1.2kV) 60A 175mOhm @ 30A, 10V 5V @ 10mA 748nC @ 10V 20600pF @ 25V 1250W -40°C ~ 150°C (TJ) - - Chassis Mount SP6
    APTM10AM02FG

    APTM10AM02FG

    MOSFET 2N-CH 100V 495A SP6

    Microchip Technology

    0
    APTM10AM02FG

    规格书

    - SP6 Bulk Active MOSFET (Metal Oxide) 2 N-Channel (Half Bridge) - 100V 495A 2.5mOhm @ 200A, 10V 4V @ 10mA 1360nC @ 10V 40000pF @ 25V 1250W -40°C ~ 150°C (TJ) - - Chassis Mount SP6
    APTM20HM08FG

    APTM20HM08FG

    MOSFET 4N-CH 200V 208A SP6

    Microchip Technology

    0
    APTM20HM08FG

    规格书

    - SP6 Bulk Active MOSFET (Metal Oxide) 4 N-Channel (Full Bridge) - 200V 208A 10mOhm @ 104A, 10V 5V @ 5mA 280nC @ 10V 14400pF @ 25V 781W -40°C ~ 150°C (TJ) - - Chassis Mount SP6
    APTM50AM24SCG

    APTM50AM24SCG

    MOSFET 2N-CH 500V 150A SP6

    Microchip Technology

    0
    APTM50AM24SCG

    规格书

    - SP6 Bulk Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) - 500V 150A 28mOhm @ 75A, 10V 5V @ 6mA 434nC @ 10V 19600pF @ 25V 1250W -40°C ~ 150°C (TJ) - - Chassis Mount SP6
    APTC60TAM24TPG

    APTC60TAM24TPG

    MOSFET 6N-CH 600V 95A SP6-P

    Microchip Technology

    0
    APTC60TAM24TPG

    规格书

    CoolMOS™ SP6 Tray Active MOSFET (Metal Oxide) 6 N-Channel (3-Phase Bridge) - 600V 95A 24mOhm @ 47.5A, 10V 3.9V @ 5mA 300nC @ 10V 14400pF @ 25V 462W -40°C ~ 150°C (TJ) - - Chassis Mount SP6-P
    APTM10HM05FG

    APTM10HM05FG

    MOSFET 4N-CH 100V 278A SP6

    Microchip Technology

    0
    APTM10HM05FG

    规格书

    - SP6 Bulk Active MOSFET (Metal Oxide) 4 N-Channel (Full Bridge) - 100V 278A 5mOhm @ 125A, 10V 4V @ 5mA 700nC @ 10V 20000pF @ 25V 780W -40°C ~ 150°C (TJ) - - Chassis Mount SP6
    APTM50AM17FG

    APTM50AM17FG

    MOSFET 2N-CH 500V 180A SP6

    Microchip Technology

    0
    APTM50AM17FG

    规格书

    - SP6 Bulk Active MOSFET (Metal Oxide) 2 N-Channel (Half Bridge) - 500V 180A 20mOhm @ 90A, 10V 5V @ 10mA 560nC @ 10V 28000pF @ 25V 1250W -40°C ~ 150°C (TJ) - - Chassis Mount SP6
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