场效应晶体管(FET)、MOSFET 阵列

    制造商 系列 封装/外壳 包装 产品状态 技术 配置 FET 特性 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装





























































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































    全部重置
    应用所有
    结果:
    图片 型号 库存 价格 数量 规格书 系列 封装/外壳 包装 产品状态 技术 配置 FET 特性 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装
    APTM20AM08FTG

    APTM20AM08FTG

    MOSFET 2N-CH 200V 208A SP4

    Microchip Technology

    0
    APTM20AM08FTG

    规格书

    - SP4 Bulk Active MOSFET (Metal Oxide) 2 N-Channel (Half Bridge) - 200V 208A 10mOhm @ 104A, 10V 5V @ 5mA 280nC @ 10V 14400pF @ 25V 781W -40°C ~ 150°C (TJ) - - Chassis Mount SP4
    APTM10TAM19FPG

    APTM10TAM19FPG

    MOSFET 6N-CH 100V 70A SP6-P

    Microchip Technology

    0
    APTM10TAM19FPG

    规格书

    - SP6 Bulk Active MOSFET (Metal Oxide) 6 N-Channel (3-Phase Bridge) - 100V 70A 21mOhm @ 35A, 10V 4V @ 1mA 200nC @ 10V 5100pF @ 25V 208W -40°C ~ 150°C (TJ) - - Chassis Mount SP6-P
    APTM20HM16FTG

    APTM20HM16FTG

    MOSFET 4N-CH 200V 104A SP4

    Microchip Technology

    0
    APTM20HM16FTG

    规格书

    - SP4 Bulk Active MOSFET (Metal Oxide) 4 N-Channel (Full Bridge) - 200V 104A 19mOhm @ 52A, 10V 5V @ 2.5mA 140nC @ 10V 7220pF @ 25V 390W -40°C ~ 150°C (TJ) - - Chassis Mount SP4
    APTM10AM05FTG

    APTM10AM05FTG

    MOSFET 2N-CH 100V 278A SP4

    Microchip Technology

    0
    APTM10AM05FTG

    规格书

    - SP4 Bulk Active MOSFET (Metal Oxide) 2 N-Channel (Half Bridge) - 100V 278A 5mOhm @ 125A, 10V 4V @ 5mA 700nC @ 10V 20000pF @ 25V 780W -40°C ~ 150°C (TJ) - - Chassis Mount SP4
    APTM50AM35FTG

    APTM50AM35FTG

    MOSFET 2N-CH 500V 99A SP4

    Microchip Technology

    0
    APTM50AM35FTG

    规格书

    - SP4 Bulk Active MOSFET (Metal Oxide) 2 N-Channel (Half Bridge) - 500V 99A 39mOhm @ 49.5A, 10V 5V @ 5mA 280nC @ 10V 14000pF @ 25V 781W -40°C ~ 150°C (TJ) - - Chassis Mount SP4
    APTM50HM65FTG

    APTM50HM65FTG

    MOSFET 4N-CH 500V 51A SP4

    Microchip Technology

    0
    APTM50HM65FTG

    规格书

    - SP4 Bulk Active MOSFET (Metal Oxide) 4 N-Channel (Full Bridge) - 500V 51A 78mOhm @ 25.5A, 10V 5V @ 2.5mA 140nC @ 10V 7000pF @ 25V 390W -40°C ~ 150°C (TJ) - - Chassis Mount SP4
    APTM100H45STG

    APTM100H45STG

    MOSFET 4N-CH 1000V 18A SP4

    Microchip Technology

    0
    APTM100H45STG

    规格书

    - SP4 Bulk Active MOSFET (Metal Oxide) 4 N-Channel (Full Bridge) - 1000V (1kV) 18A 540mOhm @ 9A, 10V 5V @ 2.5mA 154nC @ 10V 4350pF @ 25V 357W -40°C ~ 150°C (TJ) - - Chassis Mount SP4
    APTM100A23STG

    APTM100A23STG

    MOSFET 2N-CH 1000V 36A SP4

    Microchip Technology

    0
    APTM100A23STG

    规格书

    - SP4 Bulk Active MOSFET (Metal Oxide) 2 N-Channel (Half Bridge) - 1000V (1kV) 36A 270mOhm @ 18A, 10V 5V @ 5mA 308nC @ 10V 8700pF @ 25V 694W -40°C ~ 150°C (TJ) - - Chassis Mount SP4
    APTM100A18FTG

    APTM100A18FTG

    MOSFET 2N-CH 1000V 43A SP4

    Microchip Technology

    0
    APTM100A18FTG

    规格书

    - SP4 Bulk Active MOSFET (Metal Oxide) 2 N-Channel (Half Bridge) - 1000V (1kV) 43A 210mOhm @ 21.5A, 10V 5V @ 5mA 372nC @ 10V 10400pF @ 25V 780W -40°C ~ 150°C (TJ) - - Chassis Mount SP4
    APTM100H35FTG

    APTM100H35FTG

    MOSFET 4N-CH 1000V 22A SP4

    Microchip Technology

    0
    APTM100H35FTG

    规格书

    - SP4 Bulk Active MOSFET (Metal Oxide) 4 N-Channel (Full Bridge) - 1000V (1kV) 22A 420mOhm @ 11A, 10V 5V @ 2.5mA 186nC @ 10V 5200pF @ 25V 390W -40°C ~ 150°C (TJ) - - Chassis Mount SP4
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