场效应晶体管(FET)、MOSFET 阵列

    制造商 系列 封装/外壳 包装 产品状态 技术 配置 FET 特性 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装





























































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































    全部重置
    应用所有
    结果:
    图片 型号 库存 价格 数量 规格书 系列 封装/外壳 包装 产品状态 技术 配置 FET 特性 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装
    APTM50HM35FG

    APTM50HM35FG

    MOSFET 4N-CH 500V 99A SP6

    Microchip Technology

    0
    APTM50HM35FG

    规格书

    - SP6 Bulk Active MOSFET (Metal Oxide) 4 N-Channel (Full Bridge) - 500V 99A 39mOhm @ 49.5A, 10V 5V @ 5mA 280nC @ 10V 14000pF @ 25V 781W -40°C ~ 150°C (TJ) - - Chassis Mount SP6
    APTM100AM90FG

    APTM100AM90FG

    MOSFET 2N-CH 1000V 78A SP6

    Microchip Technology

    0
    APTM100AM90FG

    规格书

    - SP6 Bulk Active MOSFET (Metal Oxide) 2 N-Channel (Half Bridge) - 1000V (1kV) 78A 105mOhm @ 39A, 10V 5V @ 10mA 744nC @ 10V 20700pF @ 25V 1250W -40°C ~ 150°C (TJ) - - Chassis Mount SP6
    APTM120A15FG

    APTM120A15FG

    MOSFET 2N-CH 1200V 60A SP6

    Microchip Technology

    0
    APTM120A15FG

    规格书

    - SP6 Bulk Active MOSFET (Metal Oxide) 2 N-Channel (Half Bridge) - 1200V (1.2kV) 60A 175mOhm @ 30A, 10V 5V @ 10mA 748nC @ 10V 20600pF @ 25V 1250W -40°C ~ 150°C (TJ) - - Chassis Mount SP6
    APTM100H18FG

    APTM100H18FG

    MOSFET 4N-CH 1000V 43A SP6

    Microchip Technology

    0
    APTM100H18FG

    规格书

    - SP6 Bulk Active MOSFET (Metal Oxide) 4 N-Channel (Full Bridge) - 1000V (1kV) 43A 210mOhm @ 21.5A, 10V 5V @ 5mA 372nC @ 10V 10400pF @ 25V 780W -40°C ~ 150°C (TJ) - - Chassis Mount SP6
    APTM120H29FG

    APTM120H29FG

    MOSFET 4N-CH 1200V 34A SP6

    Microchip Technology

    0
    APTM120H29FG

    规格书

    POWER MOS 7® SP6 Bulk Active MOSFET (Metal Oxide) 4 N-Channel (Full Bridge) - 1200V (1.2kV) 34A 348mOhm @ 17A, 10V 5V @ 5mA 374nC @ 10V 10300pF @ 25V 780W -40°C ~ 150°C (TJ) - - Chassis Mount SP6
    APTM100TA35SCTPG

    APTM100TA35SCTPG

    MOSFET 6N-CH 1000V 22A SP6-P

    Microchip Technology

    0
    APTM100TA35SCTPG

    规格书

    POWER MOS 7® Module Bulk Active MOSFET (Metal Oxide) 6 N-Channel (3-Phase Bridge) - 1000V (1kV) 22A 420mOhm @ 11A, 10V 5V @ 2.5mA 186nC @ 10V 5200pF @ 25V 390W -40°C ~ 150°C (TJ) - - Chassis Mount SP6-P
    MSCSM120HM16CT3AG

    MSCSM120HM16CT3AG

    MOSFET 4N-CH 1200V 173A SP3F

    Microchip Technology

    0
    MSCSM120HM16CT3AG

    规格书

    - Module Tube Active Silicon Carbide (SiC) 4 N-Channel - 1200V (1.2kV) 173A (Tc) 16mOhm @ 80A, 20V 2.8V @ 2mA 464nC @ 20V 6040pF @ 1000V 745W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount SP3F
    APTC60TAM21SCTPAG

    APTC60TAM21SCTPAG

    MOSFET 6N-CH 600V 116A SP6-P

    Microchip Technology

    0
    APTC60TAM21SCTPAG

    规格书

    CoolMOS™ Module Bulk Active MOSFET (Metal Oxide) 6 N-Channel (3-Phase Bridge) - 600V 116A 21mOhm @ 88A, 10V 3.6V @ 6mA 580nC @ 10V 13000pF @ 100V 625W -40°C ~ 150°C (TJ) - - Chassis Mount SP6-P
    APTMC170AM60CT1AG

    APTMC170AM60CT1AG

    MOSFET 2N-CH 1700V 50A SP1

    Microchip Technology

    0
    APTMC170AM60CT1AG

    规格书

    - SP1 Bulk Obsolete Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 1700V (1.7kV) 50A (Tc) 60mOhm @ 50A, 20V 2.3V @ 2.5mA (Typ) 190nC @ 20V 3080pF @ 1000V 350W -40°C ~ 150°C (TJ) - - Chassis Mount SP1
    MSCSM70HM05CAG

    MSCSM70HM05CAG

    SIC MOSFET

    Microchip Technology

    0

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    - - Bulk Active - - - - - - - - - - - - - - -
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