上传BOM
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部重置
应用所有
结果:
| 图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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NTD65N03RT4GMOSFET N-CH 25V 9.5A/32A DPAK onsemi |
0 | - |
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规格书 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 25 V | 9.5A (Ta), 32A (Tc) | 4.5V, 10V | 8.4mOhm @ 30A, 10V | 2V @ 250µA | 16 nC @ 5 V | ±20V | 1400 pF @ 20 V | - | 1.3W (Ta), 50W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | DPAK |
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NTD4404N1N-CHANNEL POWER MOSFET onsemi |
121,490 | - |
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规格书 |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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NTD3813NT4GMOSFET N-CH 16V 9.6A/51A DPAK onsemi |
0 | - |
|
规格书 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 16 V | 9.6A (Ta), 51A (Tc) | 4.5V, 10V | 8.75mOhm @ 15A, 10V | 2.5V @ 250µA | 12.8 nC @ 4.5 V | ±16V | 963 pF @ 12 V | - | 1.2W (Ta), 34.9W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | DPAK |
|
MMDF4N01HDR2N-CHANNEL POWER MOSFET onsemi |
117,500 | - |
|
规格书 |
* | - | Bulk | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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2SJ646-TL-EP-CHANNEL SILICON MOSFET onsemi |
67,342 | - |
|
规格书 |
- | TO-251-3 Short Leads, IPAK, TO-251AA | Bulk | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 8A | 4V, 10V | 75mOhm @ 4A, 10V | 2.6V @ 1mA | 11 nC @ 10 V | ±20V | 510 pF @ 10 V | - | 1W (Ta), 15W (Tc) | 150°C | - | - | Through Hole | TP |
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NTD4858NAT4GMOSFET N-CH 25V 11.2A/73A DPAK onsemi |
0 | - |
|
规格书 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 25 V | 11.2A (Ta), 73A (Tc) | - | 6.2mOhm @ 30A, 10V | 2.5V @ 250µA | 19.2 nC @ 4.5 V | - | 1563 pF @ 12 V | - | 1.3W (Ta), 54.5W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | DPAK |
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NTD60N03T4MOSFET N-CH 28V 60A DPAK onsemi |
0 | - |
|
规格书 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 28 V | 60A (Tc) | 4.5V, 10V | 7.5mOhm @ 30A, 10V | 3V @ 250µA | 30 nC @ 4.5 V | ±20V | 2150 pF @ 24 V | - | 75W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | DPAK |
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NTD4809N-35GMOSFET N-CH 30V 9.6A/58A IPAK onsemi |
0 | - |
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规格书 |
- | TO-251-3 Stub Leads, IPAK | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 9.6A (Ta), 58A (Tc) | 4.5V, 11.5V | 9mOhm @ 30A, 10V | 2.5V @ 250µA | 13 nC @ 4.5 V | ±20V | 1456 pF @ 12 V | - | 1.4W (Ta), 52W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | IPAK |
|
NTMS7N03R2MOSFET N-CH 30V 4.8A 8SOIC onsemi |
0 | - |
|
规格书 |
- | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 4.8A (Ta) | 4.5V, 10V | 23mOhm @ 7A, 10V | 3V @ 250µA | 43 nC @ 10 V | ±20V | 1190 pF @ 25 V | - | 800mW (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SOIC |
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CPH6443-P-TL-HMOSFET N-CH 35V 6A CPH6 onsemi |
0 | - |
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- |
- | SOT-23-6 | Tape & Reel (TR) | Obsolete | - | - | - | 6A (Tj) | - | - | - | - | - | - | - | - | 150°C (TJ) | - | - | Surface Mount | 6-CPH |
