上传BOM
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
全部重置
应用所有
结果:
| 图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
NTD4906N-35GMOSFET N-CH 30V 10.3A/54A IPAK onsemi |
0 | - |
|
规格书 |
- | TO-251-3 Stub Leads, IPAK | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 10.3A (Ta), 54A (Tc) | 4.5V, 10V | 5.5mOhm @ 30A, 10V | 2.2V @ 250µA | 24 nC @ 10 V | ±20V | 1932 pF @ 15 V | - | 1.38W (Ta), 37.5W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | IPAK |
|
EFC4612R-TRMOSFET N-CH 24V 6A EFCP onsemi |
0 | - |
|
- |
- | 4-XFBGA | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 24 V | 6A (Ta) | - | 45mOhm @ 3A, 4.5V | 1.3V @ 1mA | 7 nC @ 4.5 V | ±12V | - | - | 1.6W (Ta) | 150°C (TJ) | - | - | Surface Mount | EFCP1313-4CC-037 |
|
NTD40N03R-1GMOSFET N-CH 25V 7.8A/32A IPAK onsemi |
0 | - |
|
规格书 |
- | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 25 V | 7.8A (Ta), 32A (Tc) | 4.5V, 10V | 16.5mOhm @ 10A, 10V | 2V @ 250µA | 5.78 nC @ 4.5 V | ±20V | 584 pF @ 20 V | - | 1.5W (Ta), 50W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | IPAK |
|
FDC608PZ-F171-20V P-CHANNEL 2.5V POWERTRENCH onsemi |
345,222 | - |
|
规格书 |
- | SOT-23-6 Thin, TSOT-23-6 | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 20 V | 5.8A (Ta) | 2.5V, 4.5V | 30mOhm @ 5.8A, 4.5V | 1.5V @ 250µA | 23 nC @ 4.5 V | ±12V | 1330 pF @ 10 V | - | 800mW (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | SuperSOT™-6 |
|
NTLJS3113PT1GMOSFET P-CH 20V 3.5A 6WDFN onsemi |
0 | - |
|
规格书 |
µCool™ | 6-WDFN Exposed Pad | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 20 V | 3.5A (Ta) | 1.5V, 4.5V | 40mOhm @ 3A, 4.5V | 1V @ 250µA | 15.7 nC @ 4.5 V | ±8V | 1329 pF @ 16 V | - | 700mW (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 6-WDFN (2x2) |
|
2SK3491-TL-ENCH 4V DRIVE SERIES onsemi |
250,600 | - |
|
规格书 |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
CPH5821-TL-EPCH+SBD 4V DRIVE SERIES onsemi |
228,000 | - |
|
- |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
NTMS4872NR2GMOSFET N-CH 30V 6A/10.2A 8SOIC onsemi |
0 | - |
|
规格书 |
- | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 6A (Ta), 10.2A (Tc) | 4.5V, 10V | 13.5mOhm @ 10.2A, 10V | 2.5V @ 250µA | 15 nC @ 4.5 V | ±20V | 1700 pF @ 15 V | - | 820mW (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SOIC |
|
NTD4809NAT4GMOSFET N-CH 30V 9.6A/58A DPAK onsemi |
0 | - |
|
规格书 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 9.6A (Ta), 58A (Tc) | 4.5V, 11.5V | 9mOhm @ 30A, 10V | 2.5V @ 250µA | 13 nC @ 4.5 V | ±20V | 1456 pF @ 12 V | - | 1.3W (Ta), 52W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | DPAK |
|
NTLUF4189NZTBGMOSFET N-CH 30V 1.2A 6UDFN onsemi |
0 | - |
|
规格书 |
- | 6-UFDFN Exposed Pad | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 1.2A (Ta) | 2.5V, 4.5V | 200mOhm @ 1.5A, 4.5V | 1.5V @ 250µA | 3 nC @ 4.5 V | ±8V | 95 pF @ 15 V | Schottky Diode (Isolated) | 500mW (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 6-UDFN (1.6x1.6) |
