| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | FET 特性 | 功耗(最大值) | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 | 
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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| 图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | FET 特性 | 功耗(最大值) | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 | 
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|   | NTD4810N-35GMOSFET N-CH 30V 9A/54A IPAK onsemi | 5,250 | - |  |   规格书 | - | TO-251-3 Stub Leads, IPAK | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 9A (Ta), 54A (Tc) | 4.5V, 11.5V | 10mOhm @ 30A, 10V | 2.5V @ 250µA | 11 nC @ 4.5 V | ±20V | 1350 pF @ 12 V | - | 1.4W (Ta), 50W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | IPAK | 
|   | NTD50N03RGMOSFET N-CH 25V 7.8A/45A DPAK onsemi | 0 | - |  |   规格书 | - | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 25 V | 7.8A (Ta), 45A (Tc) | 4.5V, 11.5V | 12mOhm @ 30A, 11.5V | 2V @ 250µA | 15 nC @ 11.5 V | ±20V | 750 pF @ 12 V | - | 1.5W (Ta), 50W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | DPAK | 
|   | MMSF7N03ZR2N-CHANNEL POWER MOSFET onsemi | 3,000 | - |  |   规格书 | * | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 
|   | NTD4810NT4GMOSFET N-CH 30V 9A/54A DPAK onsemi | 0 | - |  |   规格书 | - | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 9A (Ta), 54A (Tc) | 4.5V, 11.5V | 10mOhm @ 30A, 10V | 2.5V @ 250µA | 11 nC @ 4.5 V | ±20V | 1350 pF @ 12 V | - | 1.4W (Ta), 50W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | DPAK | 
|   | FDME910PZTMOSFET P-CH 20V 8A MICROFET onsemi | 0 | - |  |   规格书 | PowerTrench® | 6-PowerUFDFN | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 20 V | 8A (Ta) | 1.8V, 4.5V | 24mOhm @ 8A, 4.5V | 1.5V @ 250µA | 21 nC @ 4.5 V | ±8V | 2110 pF @ 10 V | - | 2.1W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | MicroFet 1.6x1.6 Thin | 
|  | NTMSD2P102R2MOSFET P-CH 20V 2.3A 8SOIC onsemi | 0 | - |  | - | - | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 20 V | 2.3A (Ta) | - | 90mOhm @ 2.4A, 4.5V | - | 18 nC @ 4.5 V | - | 750 pF @ 16 V | Schottky Diode (Isolated) | - | - | - | - | Surface Mount | 8-SOIC | 
|  | NTMSD3P102R2MOSFET P-CH 20V 2.34A 8SOIC onsemi | 0 | - |  |   规格书 | FETKY™ | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 20 V | 2.34A (Ta) | 4.5V, 10V | 85mOhm @ 3.05A, 10V | 2.5V @ 250µA | 25 nC @ 10 V | ±20V | 750 pF @ 16 V | Schottky Diode (Isolated) | 730mW (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SOIC | 
|   | MTD12N06EZLN-CHANNEL POWER MOSFET onsemi | 2,375 | - |  |   规格书 | * | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 
|   | NTHS4111PT1GMOSFET P-CH 30V 3.3A CHIPFET onsemi | 0 | - |  |   规格书 | - | 8-SMD, Flat Leads | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 30 V | 3.3A (Ta) | 4.5V, 10V | 45mOhm @ 4.4A, 10V | 3V @ 250µA | 28 nC @ 10 V | ±20V | 1500 pF @ 24 V | - | 700mW (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | ChipFET™ | 
|   | EFC4601R-M-TRNCH 2.5V DRIVE SERIES onsemi | 8,155,000 | - |  | - | * | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 

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