上传BOM
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部重置
应用所有
结果:
| 图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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NTD4969N-1GMOSFET N-CH 30V 41A IPAK-4 onsemi |
12,047 | - |
|
规格书 |
- | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 9.4A (Ta), 41A (Tc) | - | 9mOhm @ 30A, 10V | 2.5V @ 250µA | 9 nC @ 4.5 V | - | 837 pF @ 15 V | - | - | - | - | - | Through Hole | IPAK |
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NTHS5445T1MOSFET P-CH 8V 5.2A CHIPFET onsemi |
0 | - |
|
规格书 |
- | 8-SMD, Flat Leads | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 8 V | 5.2A (Ta) | 1.8V, 4.5V | 35mOhm @ 5.2A, 4.5V | 450mV @ 250µA (Min) | 26 nC @ 4.5 V | ±8V | - | - | 1.3W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | ChipFET™ |
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NTD4810N-1GMOSFET N-CH 30V 9A/54A IPAK onsemi |
9,550 | - |
|
规格书 |
- | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 9A (Ta), 54A (Tc) | 4.5V, 11.5V | 10mOhm @ 30A, 10V | 2.5V @ 250µA | 11 nC @ 4.5 V | ±20V | 1350 pF @ 12 V | - | 1.4W (Ta), 50W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | IPAK |
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NTD3055-150-1GMOSFET N-CH 60V 9A IPAK onsemi |
0 | - |
|
规格书 |
- | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 9A (Ta) | 10V | 150mOhm @ 4.5A, 10V | 4V @ 250µA | 15 nC @ 10 V | ±20V | 280 pF @ 25 V | - | 1.5W (Ta), 28.8W (Tj) | -55°C ~ 175°C (TJ) | - | - | Through Hole | IPAK |
|
NTLJS3180PZTAGMOSFET P-CH 20V 3.5A 6WDFN onsemi |
9,000 | - |
|
规格书 |
- | 6-WDFN Exposed Pad | Bulk | Obsolete | P-Channel | MOSFET (Metal Oxide) | 20 V | 3.5A (Ta) | 1.5V, 4.5V | 38mOhm @ 3A, 4.5V | 1V @ 250µA | 19.5 nC @ 4.5 V | ±8V | 1100 pF @ 16 V | - | 700mW (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 6-WDFN (2x2) |
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NTD4863N-1GMOSFET N-CH 25V 9.2A/49A IPAK onsemi |
0 | - |
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规格书 |
- | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 25 V | 9.2A (Ta), 49A (Tc) | 4.5V, 10V | 9.3mOhm @ 30A, 10V | 2.5V @ 250µA | 13.5 nC @ 4.5 V | ±20V | 990 pF @ 12 V | - | 1.27W (Ta), 36.6W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | IPAK |
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NTMSD2P102LR2GMOSFET P-CH 20V 2.3A 8SOIC onsemi |
7,500 | - |
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规格书 |
FETKY™ | 8-SOIC (0.154", 3.90mm Width) | Bulk | Obsolete | P-Channel | MOSFET (Metal Oxide) | 20 V | 2.3A (Ta) | 2.5V, 4.5V | 90mOhm @ 2.4A, 4.5V | 1.5V @ 250µA | 18 nC @ 4.5 V | ±10V | 750 pF @ 16 V | Schottky Diode (Isolated) | 710mW (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SOIC |
|
MMSF1310R2N-CHANNEL POWER MOSFET onsemi |
7,430 | - |
|
规格书 |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
NTP15N06AVNFET T0220 60V 0.12R onsemi |
6,800 | - |
|
- |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
ECH8411-TL-EMOSFET N-CH 20V 9A 8ECH onsemi |
6,000 | - |
|
- |
- | 8-SMD, Flat Leads | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20 V | 9A (Ta) | - | 16mOhm @ 4A, 4V | - | 21 nC @ 4 V | - | 1740 pF @ 10 V | - | 1.4W (Ta) | 150°C (TJ) | - | - | Surface Mount | 8-ECH |
