上传BOM
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
全部重置
应用所有
结果:
| 图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
NTD78N03R-035N-CHANNEL POWER MOSFET onsemi |
2,700 | - |
|
规格书 |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
NTD78N03R-35GN-CHANNEL POWER MOSFET onsemi |
2,625 | - |
|
规格书 |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
NTMSD3P303R2MOSFET/DIODE SCHOTTKY P-CH 8SOIC onsemi |
2,324 | - |
|
规格书 |
- | - | Bulk | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
NTD78N03RGN-CHANNEL POWER MOSFET onsemi |
1,575 | - |
|
规格书 |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
NTD23N03RT4MOSFET N-CH 25V 3.8A/17.1A DPAK onsemi |
0 | - |
|
规格书 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 25 V | 3.8A (Ta), 17.1A (Tc) | 4V, 5V | 45mOhm @ 6A, 10V | 2V @ 250µA | 3.76 nC @ 4.5 V | ±20V | 225 pF @ 20 V | - | 1.14W (Ta), 22.3W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | DPAK |
|
|
NTD50N03RT4GMOSFET N-CH 25V 7.8A/45A DPAK onsemi |
0 | - |
|
规格书 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 25 V | 7.8A (Ta), 45A (Tc) | 4.5V, 11.5V | 12mOhm @ 30A, 11.5V | 2V @ 250µA | 15 nC @ 11.5 V | ±20V | 750 pF @ 12 V | - | 1.5W (Ta), 50W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | DPAK |
|
NTMFS4C10NT1G-001MOSFET N-CH 30V 8.2A/46A 5DFN onsemi |
0 | - |
|
规格书 |
- | 8-PowerTDFN, 5 Leads | Tape & Reel (TR) | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 30 V | 8.2A (Ta), 46A (Tc) | 4.5V, 10V | 6.95mOhm @ 30A, 10V | 2.2V @ 250µA | 18.6 nC @ 10 V | ±20V | 987 pF @ 15 V | - | 750mW (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 5-DFN (5x6) (8-SOFL) |
|
FQD4N20TMMOSFET N-CH 200V 3A DPAK onsemi |
0 | - |
|
规格书 |
QFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 200 V | 3A (Tc) | 10V | 1.4Ohm @ 1.5A, 10V | 5V @ 250µA | 6.5 nC @ 10 V | ±30V | 220 pF @ 25 V | - | 2.5W (Ta), 30W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252AA |
|
FDFMA2P029ZMOSFET P-CH 20V 3.1A 6MICROFET onsemi |
0 | - |
|
规格书 |
PowerTrench® | 6-VDFN Exposed Pad | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 20 V | 3.1A (Ta) | 2.5V, 4.5V | 95mOhm @ 3.1A, 4.5V | 1.5V @ 250µA | 10 nC @ 4.5 V | ±12V | 720 pF @ 10 V | Schottky Diode (Isolated) | 1.4W (Tj) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 6-MicroFET (2x2) |
|
|
NTNS3A65PZT5GHWMOSFET P-CH 20V 281MA SOT883 onsemi |
0 | - |
|
- |
- | 3-XFDFN | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 20 V | 281mA (Ta) | 1.5V, 4.5V | 1.3Ohm @ 200mA, 4.5V | 1V @ 250µA | 1.1 nC @ 4.5 V | ±8V | 44 pF @ 10 V | - | 155mW (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | SOT-883 (XDFN3) (1x0.6) |
