上传BOM
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部重置
应用所有
结果:
| 图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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APTM20DAM08TGMOSFET N-CH 200V 208A SP4 Microchip Technology |
0 | - |
|
规格书 |
- | SP4 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 208A (Tc) | 10V | 10mOhm @ 104A, 10V | 5V @ 5mA | 280 nC @ 10 V | ±30V | 14400 pF @ 25 V | - | 781W (Tc) | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | SP4 |
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APTM20SKM08TGMOSFET N-CH 200V 208A SP4 Microchip Technology |
0 | - |
|
规格书 |
- | SP4 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 208A (Tc) | 10V | 10mOhm @ 104A, 10V | 5V @ 5mA | 280 nC @ 10 V | ±30V | 14400 pF @ 25 V | - | 781W (Tc) | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | SP4 |
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APTM10DAM05TGMOSFET N-CH 100V 278A SP4 Microchip Technology |
0 | - |
|
规格书 |
- | SP4 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 278A (Tc) | 10V | 5mOhm @ 125A, 10V | 4V @ 5mA | 700 nC @ 10 V | ±30V | 20000 pF @ 25 V | - | 780W (Tc) | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | SP4 |
|
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APTM10SKM05TGMOSFET N-CH 100V 278A SP4 Microchip Technology |
0 | - |
|
规格书 |
- | SP4 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 278A (Tc) | 10V | 5mOhm @ 125A, 10V | 4V @ 5mA | 700 nC @ 10 V | ±30V | 20000 pF @ 25 V | - | 780W (Tc) | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | SP4 |
|
APTC60DAM18CTGMOSFET N-CH 600V 143A SP4 Microchip Technology |
0 | - |
|
规格书 |
CoolMOS™ | SP4 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 143A (Tc) | 10V | 18mOhm @ 71.5A, 10V | 3.9V @ 4mA | 1036 nC @ 10 V | ±30V | 28000 pF @ 25 V | - | 833W (Tc) | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | SP4 |
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APTM50DAM19GMOSFET N-CH 500V 163A SP6 Microchip Technology |
0 | - |
|
规格书 |
- | SP6 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 163A (Tc) | 10V | 22.5mOhm @ 81.5A, 10V | 5V @ 10mA | 492 nC @ 10 V | ±30V | 22400 pF @ 25 V | - | 1136W (Tc) | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | SP6 |
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APTM50SKM19GMOSFET N-CH 500V 163A SP6 Microchip Technology |
0 | - |
|
规格书 |
- | SP6 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 163A (Tc) | 10V | 22.5mOhm @ 81.5A, 10V | 5V @ 10mA | 492 nC @ 10 V | ±30V | 22400 pF @ 25 V | - | 1136W (Tc) | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | SP6 |
|
APTM20DAM05GMOSFET N-CH 200V 317A SP6 Microchip Technology |
0 | - |
|
规格书 |
- | SP6 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 317A (Tc) | 10V | 6mOhm @ 158.5A, 10V | 5V @ 10mA | 448 nC @ 10 V | ±30V | 27400 pF @ 25 V | - | 1136W (Tc) | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | SP6 |
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APTM20DAM04GMOSFET N-CH 200V 372A SP6 Microchip Technology |
0 | - |
|
规格书 |
- | SP6 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 372A (Tc) | 10V | 5mOhm @ 186A, 10V | 5V @ 10mA | 560 nC @ 10 V | ±30V | 28900 pF @ 25 V | - | 1250W (Tc) | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | SP6 |
|
APTM20SKM04GMOSFET N-CH 200V 372A SP6 Microchip Technology |
0 | - |
|
规格书 |
- | SP6 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 372A (Tc) | 10V | 5mOhm @ 186A, 10V | 5V @ 10mA | 560 nC @ 10 V | ±30V | 28900 pF @ 25 V | - | 1250W (Tc) | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | SP6 |
