上传BOM
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部重置
应用所有
结果:
| 图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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APT30M36JLLMOSFET N-CH 300V 76A ISOTOP Microchip Technology |
0 | - |
|
规格书 |
POWER MOS 7® | SOT-227-4, miniBLOC | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 300 V | 76A (Tc) | - | 36mOhm @ 38A, 10V | 5V @ 2.5mA | 115 nC @ 10 V | - | 6480 pF @ 25 V | - | - | - | - | - | Chassis Mount | ISOTOP® |
|
APT50M50JLLMOSFET N-CH 500V 71A ISOTOP Microchip Technology |
0 | - |
|
规格书 |
POWER MOS 7® | SOT-227-4, miniBLOC | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 71A (Tc) | 10V | 50mOhm @ 35.5A, 10V | 5V @ 5mA | 200 nC @ 10 V | ±30V | 10550 pF @ 25 V | - | 595W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | ISOTOP® |
|
APL602L-1MOSFET LINEAR 600 V 49 A TO-264 Microchip Technology |
0 | - |
|
- |
- | TO-264-3, TO-264AA | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 49A (Tc) | 12V | 125mOhm @ 24.5A, 12V | 4V @ 2.5mA | - | ±30V | 9000 pF @ 25 V | - | 730W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-264 [L] |
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APT32F120JMOSFET N-CH 1200V 33A ISOTOP Microchip Technology |
0 | - |
|
规格书 |
POWER MOS 8™ | SOT-227-4, miniBLOC | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1200 V | 33A (Tc) | 10V | 320mOhm @ 25A, 10V | 5V @ 2.5mA | 560 nC @ 10 V | ±30V | 18200 pF @ 25 V | - | 960W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | ISOTOP® |
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|
APT8014JLLMOSFET N-CH 800V 42A ISOTOP Microchip Technology |
0 | - |
|
规格书 |
POWER MOS 7® | SOT-227-4, miniBLOC | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 800 V | 42A (Tc) | 10V | 140mOhm @ 21A, 10V | 5V @ 5mA | 285 nC @ 10 V | ±30V | 7238 pF @ 25 V | - | 595W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | ISOTOP® |
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APTM100SK33T1GMOSFET N-CH 1000V 23A SP1 Microchip Technology |
0 | - |
|
规格书 |
- | SP1 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 23A (Tc) | 10V | 396mOhm @ 18A, 10V | 5V @ 2.5mA | 305 nC @ 10 V | ±30V | 7868 pF @ 25 V | - | 390W (Tc) | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | SP1 |
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APT80M60JMOSFET N-CH 600V 84A ISOTOP Microchip Technology |
0 | - |
|
规格书 |
POWER MOS 8™ | SOT-227-4, miniBLOC | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 84A (Tc) | 10V | 55mOhm @ 60A, 10V | 5V @ 5mA | 600 nC @ 10 V | ±30V | 24000 pF @ 25 V | - | 960W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | ISOTOP® |
|
APL602B2GMOSFET N-CH 600V 49A T-MAX Microchip Technology |
0 | - |
|
规格书 |
- | TO-247-3 Variant | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 49A (Tc) | 12V | 125mOhm @ 24.5A, 12V | 4V @ 2.5mA | - | ±30V | 9000 pF @ 25 V | - | 730W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | T-MAX™ [B2] |
|
APL602LGMOSFET N-CH 600V 49A TO264 Microchip Technology |
0 | - |
|
规格书 |
- | TO-264-3, TO-264AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 49A (Tc) | 12V | 125mOhm @ 24.5A, 12V | 4V @ 2.5mA | - | ±30V | 9000 pF @ 25 V | - | 730W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-264 [L] |
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APT10M11JVFRMOSFET N-CH 100V 144A ISOTOP Microchip Technology |
0 | - |
|
规格书 |
POWER MOS V® | SOT-227-4, miniBLOC | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 144A (Tc) | - | 11mOhm @ 500mA, 10V | 4V @ 2.5mA | 450 nC @ 10 V | - | 10380 pF @ 25 V | - | - | - | - | - | Chassis Mount | ISOTOP® |
