上传BOM
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部重置
应用所有
结果:
| 图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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APTM100DAM90GMOSFET N-CH 1000V 78A SP6 Microchip Technology |
0 | - |
|
规格书 |
- | SP6 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 78A (Tc) | 10V | 105mOhm @ 39A, 10V | 5V @ 10mA | 744 nC @ 10 V | ±30V | 20700 pF @ 25 V | - | 1250W (Tc) | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | SP6 |
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APTM50DAM17GMOSFET N-CH 500V 180A SP6 Microchip Technology |
0 | - |
|
规格书 |
- | SP6 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 180A (Tc) | 10V | 20mOhm @ 90A, 10V | 5V @ 10mA | 560 nC @ 10 V | ±30V | 28000 pF @ 25 V | - | 1250W (Tc) | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | SP6 |
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APTM50SKM17GMOSFET N-CH 500V 180A SP6 Microchip Technology |
0 | - |
|
规格书 |
- | SP6 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 180A (Tc) | 10V | 20mOhm @ 90A, 10V | 5V @ 10mA | 560 nC @ 10 V | ±30V | 28000 pF @ 25 V | - | 1250W (Tc) | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | SP6 |
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APTM10DAM02GMOSFET N-CH 100V 495A SP6 Microchip Technology |
0 | - |
|
规格书 |
- | SP6 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 495A (Tc) | 10V | 2.5mOhm @ 200A, 10V | 4V @ 10mA | 1360 nC @ 10 V | ±30V | 40000 pF @ 25 V | - | 1250W (Tc) | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | SP6 |
|
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APTM10SKM02GMOSFET N-CH 100V 495A SP6 Microchip Technology |
0 | - |
|
规格书 |
- | SP6 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 495A (Tc) | 10V | 2.5mOhm @ 200A, 10V | 4V @ 10mA | 1360 nC @ 10 V | ±30V | 40000 pF @ 25 V | - | 1250W (Tc) | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | SP6 |
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APTM20UM04SAGMOSFET N-CH 200V 417A SP6 Microchip Technology |
0 | - |
|
规格书 |
- | SP6 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 417A (Tc) | 10V | 5mOhm @ 208.5A, 10V | 5V @ 10mA | 560 nC @ 10 V | ±30V | 28800 pF @ 25 V | - | 1560W (Tc) | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | SP6 |
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APTM10UM02FAGMOSFET N-CH 100V 570A SP6 Microchip Technology |
0 | - |
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- |
- | SP6 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 570A (Tc) | 10V | 2.5mOhm @ 200A, 10V | 4V @ 10mA | 1360 nC @ 10 V | ±30V | 40000 pF @ 25 V | - | 1660W (Tc) | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | SP6 |
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APTM50UM13SAGMOSFET N-CH 500V 335A SP6 Microchip Technology |
0 | - |
|
规格书 |
- | SP6 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 335A (Tc) | 10V | 15mOhm @ 167.5A, 10V | 5V @ 20mA | 800 nC @ 10 V | ±30V | 42200 pF @ 25 V | - | 3290W (Tc) | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | SP6 |
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APTM100UM65DAGMOSFET N-CH 1000V 145A SP6 Microchip Technology |
0 | - |
|
规格书 |
- | SP6 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 145A (Tc) | 10V | 78mOhm @ 72.5A, 10V | 5V @ 20mA | 1068 nC @ 10 V | ±30V | 28500 pF @ 25 V | - | 3250W (Tc) | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | SP6 |
|
APTM120U10SAGMOSFET N-CH 1200V 116A SP6 Microchip Technology |
0 | - |
|
规格书 |
- | SP6 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 1200 V | 116A (Tc) | 10V | 120mOhm @ 58A, 10V | 5V @ 20mA | 1100 nC @ 10 V | ±30V | 28900 pF @ 25 V | - | 3290W (Tc) | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | SP6 |
