上传BOM
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部重置
应用所有
结果:
| 图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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APTM100UM65SAGMOSFET N-CH 1000V 145A SP6 Microchip Technology |
0 | - |
|
规格书 |
- | SP6 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 145A (Tc) | 10V | 78mOhm @ 72.5A, 10V | 5V @ 20mA | 1068 nC @ 10 V | ±30V | 28500 pF @ 25 V | - | 3250W (Tc) | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | SP6 |
|
APTM20UM03FAGMOSFET N-CH 200V 580A SP6 Microchip Technology |
0 | - |
|
规格书 |
POWER MOS 7® | SP6 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 580A (Tc) | 10V | 3.6mOhm @ 290A, 10V | 5V @ 15mA | 840 nC @ 10 V | ±30V | 43300 pF @ 25 V | - | 2270W (Tc) | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | SP6 |
|
APTM10UM01FAGMOSFET N-CH 100V 860A SP6 Microchip Technology |
0 | - |
|
规格书 |
- | SP6 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 860A (Tc) | 10V | 1.6mOhm @ 275A, 10V | 4V @ 12mA | 2100 nC @ 10 V | ±30V | 60000 pF @ 25 V | - | 2500W (Tc) | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | SP6 |
|
APTM100UM60FAGMOSFET N-CH 1000V 129A SP6 Microchip Technology |
0 | - |
|
规格书 |
- | SP6 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 129A (Tc) | 10V | 70mOhm @ 64.5A, 10V | 5V @ 15mA | 1116 nC @ 10 V | ±30V | 31100 pF @ 25 V | - | 2272W (Tc) | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | SP6 |
|
APTM120U10SCAVGMOSFET N-CH 1200V 116A SP6 Microchip Technology |
0 | - |
|
规格书 |
POWER MOS 7® | SP6 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 1200 V | 116A (Tc) | 10V | 120mOhm @ 58A, 10V | 5V @ 20mA | 1100 nC @ 10 V | ±30V | 28900 pF @ 25 V | - | 3290W (Tc) | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | SP6 |
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APTM120UM70DAGMOSFET N-CH 1200V 171A SP6 Microchip Technology |
0 | - |
|
规格书 |
- | SP6 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 1200 V | 171A (Tc) | 10V | 80mOhm @ 85.5A, 10V | 5V @ 30mA | 1650 nC @ 10 V | ±30V | 43500 pF @ 25 V | - | 5000W (Tc) | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | SP6 |
|
APTM50UM09FAGMOSFET N-CH 500V 497A SP6 Microchip Technology |
0 | - |
|
规格书 |
- | SP6 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 497A (Tc) | 10V | 10mOhm @ 248.5A, 10V | 5V @ 30mA | 1200 nC @ 10 V | ±30V | 63300 pF @ 25 V | - | 5000W (Tc) | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | SP6 |
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APTM100UM65SCAVGMOSFET N-CH 1000V 145A SP6 Microchip Technology |
0 | - |
|
规格书 |
POWER MOS 7® | Module | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 145A (Tc) | 10V | 78mOhm @ 72.5A, 10V | 5V @ 20mA | 1068 nC @ 10 V | ±30V | 28500 pF @ 25 V | - | 3250W (Tc) | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | SP6 |
|
APTM100UM45FAGMOSFET N-CH 1000V 215A SP6 Microchip Technology |
0 | - |
|
规格书 |
- | SP6 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 215A (Tc) | 10V | 52mOhm @ 107.5A, 10V | 5V @ 30mA | 1602 nC @ 10 V | ±30V | 42700 pF @ 25 V | - | 5000W (Tc) | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | SP6 |
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JANSR2N7593U3RH MOSFET _ U3 Microchip Technology |
0 | - |
|
- |
- | 3-SMD, No Lead | Tray | Active | N-Channel | MOSFET (Metal Oxide) | 250 V | 12.4A (Tc) | 12V | 210mOhm @ 7.8A, 12V | 4V @ 1mA | 50 nC @ 12 V | ±20V | - | - | 75W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | U3 (SMD-0.5) |
