上传BOM
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部重置
应用所有
结果:
| 图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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APT80F60JMOSFET N-CH 600V 84A ISOTOP Microchip Technology |
0 | - |
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规格书 |
POWER MOS 8™ | SOT-227-4, miniBLOC | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 84A (Tc) | 10V | 55mOhm @ 60A, 10V | 5V @ 2.5mA | 598 nC @ 10 V | ±30V | 23994 pF @ 25 V | - | 961W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | ISOTOP® |
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APL602JMOSFET N-CH 600V 43A ISOTOP Microchip Technology |
0 | - |
|
规格书 |
- | SOT-227-4, miniBLOC | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 43A (Tc) | 12V | 125mOhm @ 21.5A, 12V | 4V @ 2.5mA | - | ±30V | 9000 pF @ 25 V | - | 565W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | ISOTOP® |
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APT100F50JMOSFET N-CH 500V 103A ISOTOP Microchip Technology |
0 | - |
|
规格书 |
POWER MOS 8™ | SOT-227-4, miniBLOC | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 103A (Tc) | 10V | 36mOhm @ 75A, 10V | 5V @ 5mA | 620 nC @ 10 V | ±30V | 24600 pF @ 25 V | - | 960W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | ISOTOP® |
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APT60M75JFLLMOSFET N-CH 600V 58A ISOTOP Microchip Technology |
0 | - |
|
规格书 |
POWER MOS 7® | SOT-227-4, miniBLOC | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 58A (Tc) | 10V | 75mOhm @ 29A, 10V | 5V @ 5mA | 195 nC @ 10 V | ±30V | 8930 pF @ 25 V | - | 595W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | ISOTOP® |
|
APT10026L2LLGMOSFET N-CH 1000V 38A 264 MAX Microchip Technology |
0 | - |
|
规格书 |
POWER MOS 7® | TO-264-3, TO-264AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 38A (Tc) | - | 260mOhm @ 19A, 10V | 5V @ 5mA | 267 nC @ 10 V | - | 7114 pF @ 25 V | - | - | - | - | - | Through Hole | 264 MAX™ [L2] |
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APT34M120JMOSFET N-CH 1200V 35A SOT227 Microchip Technology |
0 | - |
|
规格书 |
- | SOT-227-4, miniBLOC | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1200 V | 35A (Tc) | 10V | 300mOhm @ 25A, 10V | 5V @ 2.5mA | 560 nC @ 10 V | ±30V | 18200 pF @ 25 V | - | 960W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | SOT-227 |
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APT45M100JMOSFET N-CH 1000V 45A SOT227 Microchip Technology |
0 | - |
|
规格书 |
- | SOT-227-4, miniBLOC | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 45A (Tc) | 10V | 180mOhm @ 33A, 10V | 5V @ 2.5mA | 570 nC @ 10 V | ±30V | 18500 pF @ 25 V | - | 960W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | SOT-227 |
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APT10M07JVFRMOSFET N-CH 100V 225A ISOTOP Microchip Technology |
0 | - |
|
规格书 |
POWER MOS V® | SOT-227-4, miniBLOC | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 225A (Tc) | - | 7mOhm @ 500mA, 10V | 4V @ 5mA | 1050 nC @ 10 V | - | 21600 pF @ 25 V | - | - | - | - | - | Chassis Mount | ISOTOP® |
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APT60M75JLLMOSFET N-CH 600V 58A ISOTOP Microchip Technology |
0 | - |
|
规格书 |
POWER MOS 7® | SOT-227-4, miniBLOC | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 58A (Tc) | 10V | 75mOhm @ 29A, 10V | 5V @ 5mA | 195 nC @ 10 V | ±30V | 8930 pF @ 25 V | - | 595W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | ISOTOP® |
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APT12057JFLLMOSFET N-CH 1200V 19A ISOTOP Microchip Technology |
0 | - |
|
规格书 |
POWER MOS 7® | SOT-227-4, miniBLOC | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1200 V | 19A (Tc) | - | 570mOhm @ 9.5A, 10V | 5V @ 2.5mA | 185 nC @ 10 V | - | 5155 pF @ 25 V | - | - | - | - | - | Chassis Mount | ISOTOP® |
