上传BOM
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部重置
应用所有
结果:
| 图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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APT8015JVFRMOSFET N-CH 800V 44A ISOTOP Microchip Technology |
0 | - |
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规格书 |
POWER MOS V® | SOT-227-4, miniBLOC | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 44A (Tc) | - | 150mOhm @ 500mA, 10V | 4V @ 5mA | 285 nC @ 10 V | - | 17650 pF @ 25 V | - | - | - | - | - | Chassis Mount | ISOTOP® |
|
APTM120DA30CT1GMOSFET N-CH 1200V 31A SP1 Microchip Technology |
0 | - |
|
规格书 |
POWER MOS 8™ | SP1 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 1200 V | 31A (Tc) | 10V | 360mOhm @ 25A, 10V | 5V @ 2.5mA | 560 nC @ 10 V | ±30V | 14560 pF @ 25 V | - | 657W (Tc) | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | SP1 |
|
APTC60SKM24CT1GMOSFET N-CH 600V 95A SP1 Microchip Technology |
0 | - |
|
规格书 |
CoolMOS™ | SP1 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 95A (Tc) | 10V | 24mOhm @ 47.5A, 10V | 3.9V @ 5mA | 300 nC @ 10 V | ±20V | 14400 pF @ 25 V | - | 462W (Tc) | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | SP1 |
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APT50M38JFLLMOSFET N-CH 500V 88A ISOTOP Microchip Technology |
0 | - |
|
规格书 |
POWER MOS 7® | SOT-227-4, miniBLOC | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 88A (Tc) | - | 38mOhm @ 44A, 10V | 5V @ 5mA | 270 nC @ 10 V | - | 12000 pF @ 25 V | - | - | - | - | - | Chassis Mount | ISOTOP® |
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APT10025JVFRMOSFET N-CH 1000V 34A ISOTOP Microchip Technology |
0 | - |
|
规格书 |
POWER MOS V® | SOT-227-4, miniBLOC | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 34A (Tc) | - | 250mOhm @ 500mA, 10V | 4V @ 5mA | 990 nC @ 10 V | - | 18000 pF @ 25 V | - | - | - | - | - | Chassis Mount | ISOTOP® |
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APT10026JLLMOSFET N-CH 1000V 30A ISOTOP Microchip Technology |
0 | - |
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规格书 |
POWER MOS 7® | SOT-227-4, miniBLOC | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 30A (Tc) | - | 260mOhm @ 15A, 10V | 5V @ 5mA | 267 nC @ 10 V | - | 7114 pF @ 25 V | - | - | - | - | - | Chassis Mount | ISOTOP® |
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APT10021JLLMOSFET N-CH 1000V 37A ISOTOP Microchip Technology |
0 | - |
|
规格书 |
POWER MOS 7® | SOT-227-4, miniBLOC | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 37A (Tc) | 10V | 210mOhm @ 18.5A, 10V | 5V @ 5mA | 395 nC @ 10 V | ±30V | 9750 pF @ 25 V | - | 694W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | ISOTOP® |
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APT10026JFLLMOSFET N-CH 1000V 30A ISOTOP Microchip Technology |
0 | - |
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规格书 |
POWER MOS 7® | SOT-227-4, miniBLOC | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 30A (Tc) | - | 260mOhm @ 15A, 10V | 5V @ 5mA | 267 nC @ 10 V | - | 7114 pF @ 25 V | - | - | - | - | - | Chassis Mount | ISOTOP® |
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APT12031JFLLMOSFET N-CH 1200V 30A ISOTOP Microchip Technology |
0 | - |
|
规格书 |
POWER MOS 7® | SOT-227-4, miniBLOC | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1200 V | 30A (Tc) | 10V | 330mOhm @ 15A, 10V | 5V @ 5mA | 365 nC @ 10 V | ±30V | 9480 pF @ 25 V | - | 690AW (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | ISOTOP® |
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APTM100DA18TGMOSFET N-CH 1000V 43A SP4 Microchip Technology |
0 | - |
|
规格书 |
- | SP4 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 43A (Tc) | 10V | 210mOhm @ 21.5A, 10V | 5V @ 5mA | 372 nC @ 10 V | ±30V | 10400 pF @ 25 V | - | 780W (Tc) | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | SP4 |
