上传BOM
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部重置
应用所有
结果:
| 图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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TN5335N8-GMOSFET N-CH 350V 230MA TO243AA Microchip Technology |
1,403 | - |
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规格书 |
- | TO-243AA | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 350 V | 230mA (Tj) | 3V, 10V | 15Ohm @ 200mA, 10V | 2V @ 1mA | - | ±20V | 110 pF @ 25 V | - | 1.6W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-243AA (SOT-89) |
,TO-226_straightlead.jpg)
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TN0110N3-G-P002MOSFET N-CH 100V 350MA TO92-3 Microchip Technology |
1,864 | - |
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规格书 |
- | TO-226-3, TO-92-3 (TO-226AA) | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 350mA (Tj) | 4.5V, 10V | 3Ohm @ 500mA, 10V | 2V @ 500µA | - | ±20V | 60 pF @ 25 V | - | 1W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-92-3 |
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VN2450N3-GMOSFET N-CH 500V 200MA TO92-3 Microchip Technology |
466 | - |
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规格书 |
- | TO-226-3, TO-92-3 (TO-226AA) | Bag | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 200mA (Tj) | 4.5V, 10V | 13Ohm @ 400mA, 10V | 4V @ 1mA | - | ±20V | 150 pF @ 25 V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-92-3 |
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VN0606L-GMOSFET N-CH 60V 330MA TO92-3 Microchip Technology |
302 | - |
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规格书 |
- | TO-226-3, TO-92-3 (TO-226AA) | Bag | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 330mA (Tj) | 10V | 3Ohm @ 1A, 10V | 2V @ 1mA | - | ±30V | 50 pF @ 25 V | - | 1W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-92-3 |
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TN2540N3-GMOSFET N-CH 400V 175MA TO92-3 Microchip Technology |
168 | - |
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规格书 |
- | TO-226-3, TO-92-3 (TO-226AA) | Bag | Active | N-Channel | MOSFET (Metal Oxide) | 400 V | 175mA (Tj) | 4.5V, 10V | 12Ohm @ 500mA, 10V | 2V @ 1mA | - | ±20V | 125 pF @ 25 V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-92-3 |
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TN2435N8-GMOSFET N-CH 350V 365MA TO243AA Microchip Technology |
4,978 | - |
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规格书 |
- | TO-243AA | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 350 V | 365mA (Tj) | 3V, 10V | 6Ohm @ 750mA, 10V | 2.5V @ 1mA | - | ±20V | 200 pF @ 25 V | - | 1.6W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-243AA (SOT-89) |
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TP2520N8-GMOSFET P-CH 200V 260MA TO243AA Microchip Technology |
3,522 | - |
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规格书 |
- | TO-243AA | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 200 V | 260mA (Tj) | 4.5V, 10V | 12Ohm @ 200mA, 10V | 2.4V @ 1mA | - | ±20V | 125 pF @ 25 V | - | 1.6W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-243AA (SOT-89) |
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TP2502N8-GMOSFET P-CH 20V 630MA TO243AA Microchip Technology |
197 | - |
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规格书 |
- | TO-243AA | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 630mA (Tj) | 5V, 10V | 2Ohm @ 1A, 10V | 2.4V @ 1mA | - | ±20V | 125 pF @ 20 V | - | 1.6W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-243AA (SOT-89) |
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TN0620N3-G-P002MOSFET N-CH 200V 250MA TO92-3 Microchip Technology |
6,309 | - |
|
规格书 |
- | TO-226-3, TO-92-3 (TO-226AA) | Cut Tape (CT) | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 250mA (Tj) | 5V, 10V | 6Ohm @ 500mA, 10V | 1.6V @ 1mA | - | ±20V | 150 pF @ 25 V | - | 1W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-92-3 |
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TP2540N3-GMOSFET P-CH 400V 86MA TO92-3 Microchip Technology |
998 | - |
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规格书 |
- | TO-226-3, TO-92-3 (TO-226AA) | Bag | Active | P-Channel | MOSFET (Metal Oxide) | 400 V | 86mA (Tj) | 4.5V, 10V | 25Ohm @ 100mA, 10V | 2.4V @ 1mA | - | ±20V | 125 pF @ 25 V | - | 740mW (Ta) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-92-3 |
