制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | FET 特性 | 功耗(最大值) | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | FET 特性 | 功耗(最大值) | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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APT6010JLLMOSFET N-CH 600V 47A ISOTOP Microchip Technology |
0 | - |
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![]() 规格书 |
POWER MOS 7® | SOT-227-4, miniBLOC | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 47A (Tc) | - | 100mOhm @ 23.5A, 10V | 5V @ 2.5mA | 150 nC @ 10 V | - | 6710 pF @ 25 V | - | - | - | - | - | Chassis Mount | ISOTOP® |
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APT30M30JLLMOSFET N-CH 300V 88A ISOTOP Microchip Technology |
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![]() 规格书 |
POWER MOS 7® | SOT-227-4, miniBLOC | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 300 V | 88A (Tc) | - | 30mOhm @ 44A, 10V | 5V @ 2.5mA | 140 nC @ 10 V | - | 7030 pF @ 25 V | - | - | - | - | - | Chassis Mount | ISOTOP® |
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APT26M100JCU3MOSFET N-CH 1000V 26A SOT227 Microchip Technology |
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![]() 规格书 |
POWER MOS 8™ | SOT-227-4, miniBLOC | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 26A (Tc) | 10V | 396mOhm @ 18A, 10V | 5V @ 2.5mA | 305 nC @ 10 V | ±30V | 7868 pF @ 25 V | - | 543W (Tc) | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | SOT-227 |
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APT5010JFLLMOSFET N-CH 500V 41A ISOTOP Microchip Technology |
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![]() 规格书 |
POWER MOS 7® | SOT-227-4, miniBLOC | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 41A (Tc) | - | 100mOhm @ 20.5A, 10V | 5V @ 2.5mA | 95 nC @ 10 V | - | 4360 pF @ 25 V | - | - | - | - | - | Chassis Mount | ISOTOP® |
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APT50N60JCCU2MOSFET N-CH 600V 50A SOT227 Microchip Technology |
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![]() 规格书 |
- | SOT-227-4, miniBLOC | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 50A (Tc) | 10V | 45mOhm @ 22.5A, 10V | 3.9V @ 3mA | 150 nC @ 10 V | ±20V | 6800 pF @ 25 V | - | 290W (Tc) | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | SOT-227 |
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APT6013JFLLMOSFET N-CH 600V 39A ISOTOP Microchip Technology |
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![]() 规格书 |
POWER MOS 7® | SOT-227-4, miniBLOC | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 39A (Tc) | - | 130mOhm @ 19.5A, 10V | 5V @ 2.5mA | 130 nC @ 10 V | - | 5630 pF @ 25 V | - | - | - | - | - | Chassis Mount | ISOTOP® |
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APT30M40JVFRMOSFET N-CH 300V 70A ISOTOP Microchip Technology |
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![]() 规格书 |
POWER MOS V® | SOT-227-4, miniBLOC | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 300 V | 70A (Tc) | 10V | 40mOhm @ 500mA, 10V | 4V @ 2.5mA | 425 nC @ 10 V | ±30V | 10200 pF @ 25 V | - | 450W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | ISOTOP® |
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APT10050JVFRMOSFET N-CH 1000V 19A ISOTOP Microchip Technology |
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POWER MOS V® | SOT-227-4, miniBLOC | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 19A (Tc) | - | 500mOhm @ 500mA, 10V | 4V @ 2.5mA | 500 nC @ 10 V | - | 7900 pF @ 25 V | - | - | - | - | - | Chassis Mount | ISOTOP® |
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APT20M120JCU2MOSFET N-CH 1200V 20A SOT227 Microchip Technology |
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![]() 规格书 |
POWER MOS 8™ | SOT-227-4, miniBLOC | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 1200 V | 20A (Tc) | 10V | 672mOhm @ 14A, 10V | 5V @ 2.5mA | 300 nC @ 10 V | ±30V | 7736 pF @ 25 V | - | 543W (Tc) | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | SOT-227 |
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APT20M120JCU3MOSFET N-CH 1200V 20A SOT227 Microchip Technology |
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![]() 规格书 |
POWER MOS 8™ | SOT-227-4, miniBLOC | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 1200 V | 20A (Tc) | 10V | 672mOhm @ 14A, 10V | 5V @ 2.5mA | 300 nC @ 10 V | ±30V | 7736 pF @ 25 V | - | 543W (Tc) | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | SOT-227 |