上传BOM
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部重置
应用所有
结果:
| 图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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APT12057LFLLGMOSFET N-CH 1200V 22A TO264 Microchip Technology |
0 | - |
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规格书 |
POWER MOS 7® | TO-264-3, TO-264AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1200 V | 22A (Tc) | 10V | 570mOhm @ 11A, 10V | 5V @ 2.5mA | 185 nC @ 10 V | ±30V | 5155 pF @ 25 V | - | 690W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-264 [L] |
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APT8020JFLLMOSFET N-CH 800V 33A ISOTOP Microchip Technology |
0 | - |
|
规格书 |
POWER MOS 7® | SOT-227-4, miniBLOC | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 33A (Tc) | - | 220mOhm @ 16.5A, 10V | 5V @ 2.5mA | 195 nC @ 10 V | - | 5200 pF @ 25 V | - | - | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | ISOTOP® |
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APT8020LFLLGMOSFET N-CH 800V 38A TO264 Microchip Technology |
0 | - |
|
规格书 |
POWER MOS 7® | TO-264-3, TO-264AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 38A (Tc) | 10V | 220mOhm @ 19A, 10V | 5V @ 2.5mA | 195 nC @ 10 V | ±30V | 5200 pF @ 25 V | - | 694W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-264 [L] |
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APT60M80L2VRGMOSFET N-CH 600V 65A 264 MAX Microchip Technology |
0 | - |
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规格书 |
POWER MOS V® | TO-264-3, TO-264AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 65A (Tc) | 10V | 80mOhm @ 32.5A, 10V | 4V @ 5mA | 590 nC @ 10 V | ±30V | 13300 pF @ 25 V | - | 833W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | 264 MAX™ [L2] |
|
MSC017SMA120SMOSFET SIC 1200V 17 MOHM TO-268 Microchip Technology |
0 | - |
|
规格书 |
- | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | Bulk | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 100A (Tc) | 20V | 22mOhm @ 40A, 20V | 2.7V @ 4.5mA (Typ) | 249 nC @ 20 V | +22V, -10V | 5280 pF @ 1000 V | - | 357W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D3PAK |
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APT10045JFLLMOSFET N-CH 1000V 21A ISOTOP Microchip Technology |
0 | - |
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规格书 |
POWER MOS 7® | SOT-227-4, miniBLOC | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 21A (Tc) | - | 460mOhm @ 11.5A, 10V | 5V @ 2.5mA | 154 nC @ 10 V | - | 4350 pF @ 25 V | - | - | - | - | - | Chassis Mount | ISOTOP® |
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APT20M20JFLLMOSFET N-CH 200V 104A ISOTOP Microchip Technology |
0 | - |
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规格书 |
POWER MOS V® | SOT-227-4, miniBLOC | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 104A (Tc) | - | 20mOhm @ 52A, 10V | 5V @ 2.5mA | 110 nC @ 10 V | - | 6850 pF @ 25 V | - | - | - | - | - | Chassis Mount | ISOTOP® |
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APT30M36JFLLMOSFET N-CH 300V 76A ISOTOP Microchip Technology |
0 | - |
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规格书 |
POWER MOS 7® | SOT-227-4, miniBLOC | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 300 V | 76A (Tc) | - | 36mOhm @ 38A, 10V | 5V @ 2.5mA | 115 nC @ 10 V | - | 6480 pF @ 25 V | - | - | - | - | - | Chassis Mount | ISOTOP® |
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APT8014L2FLLGMOSFET N-CH 800V 52A 264 MAX Microchip Technology |
0 | - |
|
规格书 |
POWER MOS 7® | TO-264-3, TO-264AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 52A (Tc) | - | 160mOhm @ 26A, 10V | 5V @ 5mA | 285 nC @ 10 V | - | 7238 pF @ 25 V | - | - | - | - | - | Through Hole | 264 MAX™ [L2] |
|
APT8020JLLMOSFET N-CH 800V 33A ISOTOP Microchip Technology |
0 | - |
|
规格书 |
POWER MOS 7® | SOT-227-4, miniBLOC | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 33A (Tc) | 10V | 200mOhm @ 16.5A, 10V | 5V @ 2.5mA | 195 nC @ 10 V | ±30V | 5200 pF @ 25 V | - | 520W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | ISOTOP® |
