制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | FET 特性 | 功耗(最大值) | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | FET 特性 | 功耗(最大值) | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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APT25M100JMOSFET N-CH 1000V 25A ISOTOP Microchip Technology |
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![]() 规格书 |
POWER MOS 8™ | SOT-227-4, miniBLOC | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 25A (Tc) | 10V | 330mOhm @ 18A, 10V | 5V @ 2.5mA | 305 nC @ 10 V | ±30V | 9835 pF @ 25 V | - | 545W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | ISOTOP® |
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APT8020B2LLGMOSFET N-CH 800V 38A T-MAX Microchip Technology |
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![]() 规格书 |
POWER MOS 7® | TO-247-3 Variant | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 38A (Tc) | 10V | 200mOhm @ 19A, 10V | 5V @ 2.5mA | 195 nC @ 10 V | ±30V | 5200 pF @ 25 V | - | 694W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | T-MAX™ [B2] |
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APT22F120B2MOSFET N-CH 1200V 23A T-MAX Microchip Technology |
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![]() 规格书 |
POWER MOS 8™ | TO-247-3 Variant | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1200 V | 23A (Tc) | 10V | 700mOhm @ 12A, 10V | 5V @ 2.5mA | 260 nC @ 10 V | ±30V | 8370 pF @ 25 V | - | 1040W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | T-MAX™ [B2] |
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APT50M75JLLMOSFET N-CH 500V 51A ISOTOP Microchip Technology |
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![]() 规格书 |
POWER MOS 7® | SOT-227-4, miniBLOC | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 51A (Tc) | - | 75mOhm @ 25.5A, 10V | 5V @ 2.5mA | 125 nC @ 10 V | - | 5590 pF @ 25 V | - | - | - | - | - | Chassis Mount | ISOTOP® |
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APT47F60JMOSFET N-CH 600V 49A ISOTOP Microchip Technology |
0 | - |
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POWER MOS 8™ | SOT-227-4, miniBLOC | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 49A (Tc) | 10V | 90mOhm @ 33A, 10V | 5V @ 2.5mA | 330 nC @ 10 V | ±30V | 13190 pF @ 25 V | - | 540W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | ISOTOP® |
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APT20M20LFLLGMOSFET N-CH 200V 100A TO264 Microchip Technology |
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![]() 规格书 |
POWER MOS V® | TO-264-3, TO-264AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 100A (Tc) | - | 20mOhm @ 50A, 10V | 5V @ 2.5mA | 110 nC @ 10 V | - | 6850 pF @ 25 V | - | - | - | - | - | Through Hole | TO-264 [L] |
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APT58M50JCU2MOSFET N-CH 500V 58A SOT227 Microchip Technology |
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POWER MOS 8™ | SOT-227-4, miniBLOC | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 58A (Tc) | 10V | 65mOhm @ 42A, 10V | 5V @ 2.5mA | 340 nC @ 10 V | ±30V | 10800 pF @ 25 V | - | 543W (Tc) | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | SOT-227 |
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APT1201R5BVRGMOSFET N-CH 1200V 10A TO247 Microchip Technology |
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- | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1200 V | 10A (Tc) | 10V | 1.5Ohm @ 5A, 10V | 4V @ 1mA | 28 nC @ 10 V | - | 4440 pF @ 25 V | - | - | - | - | - | Through Hole | TO-247-3 |
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APT30M40JVRMOSFET N-CH 300V 70A ISOTOP Microchip Technology |
0 | - |
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![]() 规格书 |
POWER MOS V® | SOT-227-4, miniBLOC | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 300 V | 70A (Tc) | 10V | 40mOhm @ 500mA, 10V | 4V @ 2.5mA | 425 nC @ 10 V | ±30V | 10200 pF @ 25 V | - | 450W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | ISOTOP® |
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APT5010JVRU3MOSFET N-CH 500V 44A SOT227 Microchip Technology |
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![]() 规格书 |
- | SOT-227-4, miniBLOC | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 44A (Tc) | 10V | 100mOhm @ 22A, 10V | 4V @ 2.5mA | 312 nC @ 10 V | ±30V | 7410 pF @ 25 V | - | 450W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | SOT-227 |