制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | FET 特性 | 功耗(最大值) | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | FET 特性 | 功耗(最大值) | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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APT20M22JVRU3MOSFET N-CH 200V 97A SOT227 Microchip Technology |
0 | - |
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![]() 规格书 |
- | SOT-227-4, miniBLOC | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 97A (Tc) | 10V | 22mOhm @ 48.5A, 10V | 4V @ 2.5mA | 290 nC @ 10 V | ±30V | 8500 pF @ 25 V | - | 450W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | SOT-227 |
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APT32M80JMOSFET N-CH 800V 33A ISOTOP Microchip Technology |
0 | - |
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![]() 规格书 |
POWER MOS 8™ | SOT-227-4, miniBLOC | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 33A (Tc) | 10V | 190mOhm @ 24A, 10V | 5V @ 2.5mA | 303 nC @ 10 V | ±30V | 9326 pF @ 25 V | - | 543W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | ISOTOP® |
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APT47M60JMOSFET N-CH 600V 49A ISOTOP Microchip Technology |
5 | - |
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![]() 规格书 |
POWER MOS 8™ | SOT-227-4, miniBLOC | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 49A (Tc) | 10V | 90mOhm @ 33A, 10V | 5V @ 2.5mA | 330 nC @ 10 V | ±30V | 13190 pF @ 25 V | - | 540W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | ISOTOP® |
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APT58F50JMOSFET N-CH 500V 58A ISOTOP Microchip Technology |
0 | - |
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![]() 规格书 |
POWER MOS 8™ | SOT-227-4, miniBLOC | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 58A (Tc) | 10V | 65mOhm @ 42A, 10V | 5V @ 2.5mA | 340 nC @ 10 V | ±30V | 13500 pF @ 25 V | - | 540W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | ISOTOP® |
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APT20M18LVFRGMOSFET N-CH 200V 100A TO264 Microchip Technology |
0 | - |
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![]() 规格书 |
POWER MOS V® | TO-264-3, TO-264AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 100A (Tc) | - | 18mOhm @ 50A, 10V | 4V @ 2.5mA | 330 nC @ 10 V | - | 9880 pF @ 25 V | - | - | - | - | - | Through Hole | TO-264 [L] |
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APT8020B2FLLGMOSFET N-CH 800V 38A T-MAX Microchip Technology |
0 | - |
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![]() 规格书 |
POWER MOS 7® | TO-247-3 Variant | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 38A (Tc) | - | 220mOhm @ 19A, 10V | 5V @ 2.5mA | 195 nC @ 10 V | - | 5200 pF @ 25 V | - | - | - | - | - | Through Hole | T-MAX™ [B2] |
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APT50M75JLLU3MOSFET N-CH 500V 51A SOT227 Microchip Technology |
0 | - |
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- | SOT-227-4, miniBLOC | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 51A (Tc) | 10V | 75mOhm @ 25.5A, 10V | 5V @ 1mA | 123 nC @ 10 V | ±30V | 5590 pF @ 25 V | - | 290W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | SOT-227 |
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APT6010LFLLGMOSFET N-CH 600V 54A TO264 Microchip Technology |
0 | - |
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![]() 规格书 |
POWER MOS 7® | TO-264-3, TO-264AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 54A (Tc) | - | 100mOhm @ 27A, 10V | 5V @ 2.5mA | 150 nC @ 10 V | - | 6710 pF @ 25 V | - | - | - | - | - | Through Hole | TO-264 [L] |
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APT12060LVFRGMOSFET N-CH 1200V 20A TO264 Microchip Technology |
0 | - |
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![]() 规格书 |
POWER MOS V® | TO-264-3, TO-264AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1200 V | 20A (Tc) | - | 600mOhm @ 10A, 10V | 4V @ 1mA | 650 nC @ 10 V | - | 9500 pF @ 25 V | - | - | - | - | - | Through Hole | TO-264 [L] |
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APT12067LFLLGMOSFET N-CH 1200V 18A TO264 Microchip Technology |
0 | - |
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![]() 规格书 |
POWER MOS 7® | TO-264-3, TO-264AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1200 V | 18A (Tc) | - | 670mOhm @ 9A, 10V | 5V @ 2.5mA | 150 nC @ 10 V | - | 4420 pF @ 25 V | - | - | - | - | - | Through Hole | TO-264 [L] |