上传BOM
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部重置
应用所有
结果:
| 图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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APT8020LLLGMOSFET N-CH 800V 38A TO264 Microchip Technology |
0 | - |
|
规格书 |
POWER MOS 7® | TO-264-3, TO-264AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 38A (Tc) | - | 200mOhm @ 19A, 10V | 5V @ 2.5mA | 195 nC @ 10 V | - | 5200 pF @ 25 V | - | - | - | - | - | Through Hole | TO-264 [L] |
|
APT10045B2LLGMOSFET N-CH 1000V 23A T-MAX Microchip Technology |
0 | - |
|
规格书 |
POWER MOS 7® | TO-247-3 Variant | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 23A (Tc) | 10V | 450mOhm @ 11.5A, 10V | 5V @ 2.5mA | 154 nC @ 10 V | ±30V | 4350 pF @ 25 V | - | 565W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | T-MAX™ [B2] |
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APT10035LLLGMOSFET N-CH 1000V 28A TO264 Microchip Technology |
0 | - |
|
规格书 |
POWER MOS 7® | TO-264-3, TO-264AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 28A (Tc) | 10V | 350mOhm @ 14A, 10V | 5V @ 2.5mA | 186 nC @ 10 V | ±30V | 5185 pF @ 25 V | - | 690W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-264 [L] |
|
APT58M50JMOSFET N-CH 500V 58A ISOTOP Microchip Technology |
0 | - |
|
规格书 |
POWER MOS 8™ | SOT-227-4, miniBLOC | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 58A (Tc) | 10V | 65mOhm @ 42A, 10V | 5V @ 2.5mA | 340 nC @ 10 V | ±30V | 13500 pF @ 25 V | - | 540W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | ISOTOP® |
|
APT20M22JVRMOSFET N-CH 200V 97A ISOTOP Microchip Technology |
0 | - |
|
规格书 |
POWER MOS V® | SOT-227-4, miniBLOC | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 97A (Tc) | - | 22mOhm @ 500mA, 10V | 4V @ 2.5mA | 435 nC @ 10 V | - | 10200 pF @ 25 V | - | - | - | - | - | Chassis Mount | ISOTOP® |
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APT10035LFLLGMOSFET N-CH 1000V 28A TO264 Microchip Technology |
0 | - |
|
规格书 |
POWER MOS 7® | TO-264-3, TO-264AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 28A (Tc) | - | 370mOhm @ 14A, 10V | 5V @ 2.5mA | 186 nC @ 10 V | - | 5185 pF @ 25 V | - | - | - | - | - | Through Hole | TO-264 [L] |
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APT10M11JVRU2MOSFET N-CH 100V 142A SOT227 Microchip Technology |
0 | - |
|
规格书 |
- | SOT-227-4, miniBLOC | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 142A (Tc) | 10V | 11mOhm @ 71A, 10V | 4V @ 2.5mA | 300 nC @ 10 V | ±30V | 8600 pF @ 25 V | - | 450W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | SOT-227 |
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APT10M11JVRU3MOSFET N-CH 100V 142A SOT227 Microchip Technology |
0 | - |
|
规格书 |
- | SOT-227-4, miniBLOC | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 142A (Tc) | 10V | 11mOhm @ 71A, 10V | 4V @ 2.5mA | 300 nC @ 10 V | ±30V | 8600 pF @ 25 V | - | 450W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | SOT-227 |
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APT10035B2FLLGMOSFET N-CH 1000V 28A T-MAX Microchip Technology |
0 | - |
|
规格书 |
POWER MOS 7® | TO-247-3 Variant | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 28A (Tc) | 10V | 370mOhm @ 14A, 10V | 5V @ 2.5mA | 186 nC @ 10 V | ±30V | 5185 pF @ 25 V | - | 690W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | T-MAX™ [B2] |
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APT20M22JVRU2MOSFET N-CH 200V 97A SOT227 Microchip Technology |
0 | - |
|
规格书 |
- | SOT-227-4, miniBLOC | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 97A (Tc) | 10V | 22mOhm @ 48.5A, 10V | 4V @ 2.5mA | 290 nC @ 10 V | ±30V | 8500 pF @ 25 V | - | 450W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | SOT-227 |
