上传BOM
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部重置
应用所有
结果:
| 图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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APT6010LLLGMOSFET N-CH 600V 54A TO264 Microchip Technology |
0 | - |
|
规格书 |
POWER MOS 7® | TO-264-3, TO-264AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 54A (Tc) | - | 100mOhm @ 27A, 10V | 5V @ 2.5mA | 150 nC @ 10 V | - | 6710 pF @ 25 V | - | - | - | - | - | Through Hole | TO-264 [L] |
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APT39M60JMOSFET N-CH 600V 42A ISOTOP Microchip Technology |
0 | - |
|
规格书 |
POWER MOS 8™ | SOT-227-4, miniBLOC | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 42A (Tc) | 10V | 110mOhm @ 28A, 10V | 5V @ 2.5mA | 280 nC @ 10 V | ±30V | 11300 pF @ 25 V | - | 480W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | ISOTOP® |
|
APT20M20JLLMOSFET N-CH 200V 104A ISOTOP Microchip Technology |
0 | - |
|
规格书 |
POWER MOS V® | SOT-227-4, miniBLOC | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 104A (Tc) | - | 20mOhm @ 52A, 10V | 5V @ 2.5mA | 110 nC @ 10 V | - | 6850 pF @ 25 V | - | - | - | - | - | Chassis Mount | ISOTOP® |
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APT39F60JMOSFET N-CH 600V 42A ISOTOP Microchip Technology |
0 | - |
|
规格书 |
POWER MOS 8™ | SOT-227-4, miniBLOC | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 42A (Tc) | 10V | 110mOhm @ 28A, 10V | 5V @ 2.5mA | 280 nC @ 10 V | ±30V | 11300 pF @ 25 V | - | 480W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | ISOTOP® |
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APT5010JLLU3MOSFET N-CH 500V 41A SOT227 Microchip Technology |
0 | - |
|
规格书 |
POWER MOS 7® | SOT-227-4, miniBLOC | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 41A (Tc) | 10V | 100mOhm @ 23A, 10V | 5V @ 2.5mA | 96 nC @ 10 V | ±30V | 4360 pF @ 25 V | - | 378W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | SOT-227 |
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APT21M100JMOSFET N-CH 1000V 21A ISOTOP Microchip Technology |
0 | - |
|
规格书 |
POWER MOS 8™ | SOT-227-4, miniBLOC | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 21A (Tc) | 10V | 380mOhm @ 16A, 10V | 5V @ 2.5mA | 260 nC @ 10 V | ±30V | 8500 pF @ 25 V | - | 462W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | ISOTOP® |
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APT58M50JU2MOSFET N-CH 500V 58A SOT227 Microchip Technology |
0 | - |
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规格书 |
POWER MOS 8™ | SOT-227-4, miniBLOC | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 58A (Tc) | 10V | 65mOhm @ 42A, 10V | 5V @ 2.5mA | 340 nC @ 10 V | ±30V | 10800 pF @ 25 V | - | 543W (Tc) | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | SOT-227 |
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APT58M50JU3MOSFET N-CH 500V 58A SOT227 Microchip Technology |
0 | - |
|
规格书 |
POWER MOS 8™ | SOT-227-4, miniBLOC | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 58A (Tc) | 10V | 65mOhm @ 42A, 10V | 5V @ 2.5mA | 340 nC @ 10 V | ±30V | 10800 pF @ 25 V | - | 543W (Tc) | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | SOT-227 |
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APT19F100JMOSFET N-CH 1000V 20A ISOTOP Microchip Technology |
3 | - |
|
规格书 |
POWER MOS 8™ | SOT-227-4, miniBLOC | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 20A (Tc) | 10V | 440mOhm @ 16A, 10V | 5V @ 2.5mA | 260 nC @ 10 V | ±30V | 8500 pF @ 25 V | - | 460W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | ISOTOP® |
|
APT6010B2FLLGMOSFET N-CH 600V 54A T-MAX Microchip Technology |
0 | - |
|
规格书 |
POWER MOS 7® | TO-247-3 Variant | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 54A (Tc) | - | 100mOhm @ 27A, 10V | 5V @ 2.5mA | 150 nC @ 10 V | - | 6710 pF @ 25 V | - | - | - | - | - | Through Hole | T-MAX™ [B2] |
