上传BOM
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部重置
应用所有
结果:
| 图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IPW65R075CFD7AXKSA1MOSFET N-CH 650V 32A TO247-3-41 Infineon Technologies |
175 | - |
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规格书 |
CoolMOS™ CFD7A | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 32A (Tc) | 10V | 75mOhm @ 16.4A, 10V | 4.5V @ 820µA | 68 nC @ 10 V | ±20V | 3288 pF @ 400 V | - | 171W (Tc) | -40°C ~ 150°C (TJ) | Automotive | AEC-Q101 | Through Hole | PG-TO247-3-41 |
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IPTG039N15NM5ATMA1TRENCH >=100V Infineon Technologies |
1,800 | - |
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规格书 |
OptiMOS™ 5 | 8-PowerSMD, Gull Wing | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 21A (Ta), 190A (Tc) | 8V, 10V | 3.9mOhm @ 50A, 10V | 4.6V @ 243µA | 93 nC @ 10 V | ±20V | 7300 pF @ 75 V | - | 3.8W (Ta), 319W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-HSOG-8 |
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IPT60R045CFD7XTMA1MOSFET N-CH 600V 52A 8HSOF Infineon Technologies |
3,920 | - |
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规格书 |
CoolMOS™ CFD7 | 8-PowerSFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 52A (Tc) | 10V | 45mOhm @ 18A, 10V | 4.5V @ 900µA | 79 nC @ 10 V | ±20V | 3194 pF @ 400 V | - | 270W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-HSOF-8-2 |
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AUIRF7749L2TRMOSFET N-CH 60V 36A DIRECTFET Infineon Technologies |
6,741 | - |
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规格书 |
OptiMOS™ | DirectFET™ Isometric L8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 36A (Ta), 345A (Tc) | 10V | 1.5mOhm @ 120A, 10V | 4V @ 250µA | 275 nC @ 10 V | ±20V | 10655 pF @ 25 V | - | 3.8W (Ta), 341W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | DirectFET™ Isometric L8 |
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IRFP4468PBFXKMA1TRENCH >=100V PG-TO247-3 Infineon Technologies |
300 | - |
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规格书 |
HEXFET® | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 290A (Tc) | 10V | 2.6mOhm @ 180A, 10V | 4V @ 250µA | 540 nC @ 10 V | ±20V | 19860 pF @ 50 V | - | 520W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247AC |
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IPW60R099CPFKSA1MOSFET N-CH 650V 31A TO247-3 Infineon Technologies |
265 | - |
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规格书 |
CoolMOS™ | TO-247-3 | Tube | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 650 V | 31A (Tc) | 10V | 99mOhm @ 18A, 10V | 3.5V @ 1.2mA | 80 nC @ 10 V | ±20V | 2800 pF @ 100 V | - | 255W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO247-3-1 |
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IPTG011N08NM5ATMA1MOSFET N-CH 80V 42A/408A HSOG-8 Infineon Technologies |
2,859 | - |
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规格书 |
OptiMOS™ 5 | 8-PowerSMD, Gull Wing | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 42A (Ta), 408A (Tc) | 6V, 10V | 1.1mOhm @ 150A, 10V | 3.8V @ 280µA | 223 nC @ 10 V | ±20V | 17000 pF @ 40 V | - | 3.8W (Ta), 375W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-HSOG-8-1 |
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IPTG210N25NM3FDATMA1TRENCH >=100V PG-HSOG-8 Infineon Technologies |
1,800 | - |
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规格书 |
OptiMOS™ 3 | 8-PowerSMD, Gull Wing | Tape & Reel (TR) | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 250 V | 7.7A (Ta), 77A (Tc) | 10V | 21mOhm @ 69A, 10V | 4V @ 267µA | 81 nC @ 10 V | ±20V | 7000 pF @ 125 V | - | 3.8W (Ta), 375W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-HSOG-8-1 |
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IPTG111N20NM3FDATMA1TRENCH >=100V PG-HSOG-8 Infineon Technologies |
1,726 | - |
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规格书 |
OptiMOS™ 3 | 8-PowerSMD, Gull Wing | Tape & Reel (TR) | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 200 V | 10.8A (Ta), 108A (Tc) | 10V | 11.1mOhm @ 96A, 10V | 4V @ 267µA | 81 nC @ 10 V | ±20V | 7000 pF @ 100 V | - | 3.8W (Ta), 375W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-HSOG-8-1 |
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IPP410N30NAKSA1MOSFET N-CH 300V 44A TO220-3 Infineon Technologies |
429 | - |
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规格书 |
OptiMOS™ | TO-220-3 | Tube | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 300 V | 44A (Tc) | 10V | 41mOhm @ 44A, 10V | 4V @ 270µA | 87 nC @ 10 V | ±20V | 7180 pF @ 100 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3 |
