上传BOM
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部重置
应用所有
结果:
| 图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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2SK3614-Q-TD-ENCH 4V DRIVE SERIES onsemi |
19,000 | - |
|
规格书 |
- | TO-243AA | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 4A (Ta) | 4V, 10V | 145mOhm @ 2A, 10V | 2.6V @ 1mA | 7.8 nC @ 10 V | ±20V | 300 pF @ 20 V | - | 1.5W (Ta), 3.5W (Tc) | 150°C | - | - | Surface Mount | PCP |
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NTMS4N01R2MOSFET PWR N-CHAN 4.2A 20V 8SOIC onsemi |
17,191 | - |
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规格书 |
- | 8-SOIC (0.154", 3.90mm Width) | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | - | - | - | 40mOhm @ 4.2A, 4.5V | - | - | ±10V | - | - | 770mW (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SOIC |
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NTD3817N-35GMOSFET N-CH 16V 7.6A/34.5A IPAK onsemi |
0 | - |
|
规格书 |
- | TO-251-3 Stub Leads, IPAK | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 16 V | 7.6A (Ta), 34.5A (Tc) | 4.5V, 10V | 13.9mOhm @ 15A, 10V | 2.5V @ 250µA | 10.5 nC @ 4.5 V | ±16V | 702 pF @ 12 V | - | 1.2W (Ta), 25.9W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | IPAK |
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NTD3817N-1GMOSFET N-CH 16V 7.6A/34.5A IPAK onsemi |
0 | - |
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规格书 |
- | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 16 V | 7.6A (Ta), 34.5A (Tc) | 4.5V, 10V | 13.9mOhm @ 15A, 10V | 2.5V @ 250µA | 10.5 nC @ 4.5 V | ±16V | 702 pF @ 12 V | - | 1.2W (Ta), 25.9W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | IPAK |
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NTD4815NT4GMOSFET N-CH 30V 6.9A/35A DPAK onsemi |
0 | - |
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规格书 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 6.9A (Ta), 35A (Tc) | 4.5V, 11.5V | 15mOhm @ 30A, 10V | 2.5V @ 250µA | 6.6 nC @ 4.5 V | ±20V | 770 pF @ 12 V | - | 1.26W (Ta), 32.6W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | DPAK |
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CPH3407-TL-E-ONMOSFET N-CH onsemi |
12,000 | - |
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- |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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NTD4910N-35GMOSFET N-CH 30V 8.2A/37A IPAK onsemi |
0 | - |
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规格书 |
- | TO-251-3 Stub Leads, IPAK | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 8.2A (Ta), 37A (Tc) | 4.5V, 10V | 9mOhm @ 30A, 10V | 2.2V @ 250µA | 15.4 nC @ 10 V | ±20V | 1203 pF @ 15 V | - | 1.37W (Ta), 27.3W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | IPAK |
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NTD70N03RGMOSFET N-CH 25V 10A/32A DPAK onsemi |
0 | - |
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规格书 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 25 V | 10A (Ta), 32A (Tc) | 4.5V, 10V | 8mOhm @ 20A, 10V | 2V @ 250µA | 13.2 nC @ 5 V | ±20V | 1333 pF @ 20 V | - | 1.36W (Ta), 62.5W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | DPAK |
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NTD4959NHT4GMOSFET N-CH 30V 9A/58A DPAK onsemi |
0 | - |
|
规格书 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 9A (Ta), 58A (Tc) | 4.5V, 11.5V | 9mOhm @ 30A, 10V | 2.5V @ 250µA | 44 nC @ 11.5 V | ±20V | 2155 pF @ 12 V | - | 1.3W (Ta), 52W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | DPAK |
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NTD4813N-35GMOSFET N-CH 30V 7.6A/40A IPAK onsemi |
6,150 | - |
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规格书 |
- | TO-251-3 Stub Leads, IPAK | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 7.6A (Ta), 40A (Tc) | 4.5V, 11.5V | 13mOhm @ 30A, 10V | 2.5V @ 250µA | 7.9 nC @ 4.5 V | ±20V | 860 pF @ 12 V | - | 1.27W (Ta), 35.3W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | IPAK |
