制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | FET 特性 | 功耗(最大值) | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | FET 特性 | 功耗(最大值) | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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APT100MC120JCU2SICFET N-CH 1200V 143A SOT227 Microchip Technology |
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![]() 规格书 |
- | SOT-227-4, miniBLOC | Bulk | Last Time Buy | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 143A (Tc) | 20V | 17mOhm @ 100A, 20V | 2.3V @ 2mA | 360 nC @ 20 V | +25V, -10V | 5960 pF @ 1000 V | - | 600W (Tc) | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | SOT-227 |
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APT50MC120JCU2MOSFET N-CH 1200V 71A SOT227 Microchip Technology |
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- | SOT-227-4, miniBLOC | Bulk | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 1200 V | 71A (Tc) | 20V | 34mOhm @ 50A, 20V | 2.3V @ 1mA (Typ) | 179 nC @ 20 V | +25V, -10V | 2980 pF @ 1000 V | - | 300W (Tc) | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | SOT-227 |
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APT1001R1BNMOSFET N-CH 1000V 10.5A TO247AD Microchip Technology |
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POWER MOS IV® | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 1000 V | 10.5A (Tc) | 10V | 1.1Ohm @ 5.25A, 10V | 4V @ 1mA | 130 nC @ 10 V | ±30V | 2950 pF @ 25 V | - | 310W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247AD |
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APT1001RBNMOSFET N-CH 1000V 11A TO247AD Microchip Technology |
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POWER MOS IV® | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 1000 V | 11A (Tc) | 10V | 1Ohm @ 5.5A, 10V | 4V @ 1mA | 130 nC @ 10 V | ±30V | 2950 pF @ 25 V | - | 310W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247AD |
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APT5020BNMOSFET N-CH 500V 28A TO247AD Microchip Technology |
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POWER MOS IV® | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 28A (Tc) | 10V | 200mOhm @ 14A, 10V | 4V @ 1mA | 210 nC @ 10 V | ±30V | 3500 pF @ 25 V | - | 360W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247AD |
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APT5020BNFRMOSFET N-CH 500V 28A TO247AD Microchip Technology |
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POWER MOS IV® | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 28A (Tc) | 10V | 200mOhm @ 14A, 10V | 4V @ 1mA | 210 nC @ 10 V | ±30V | 3500 pF @ 25 V | - | 360W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247AD |
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TN2130K1-G-VAOMOSFET N-CH 300V 85MA SOT23-3 Microchip Technology |
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- | TO-236-3, SC-59, SOT-23-3 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 300 V | 85mA (Tj) | 4.5V | 25Ohm @ 120mA, 4.5V | 2.4V @ 1mA | - | ±20V | 50 pF @ 25 V | - | 360mW (Ta) | -55°C ~ 150°C (TA) | - | - | Surface Mount | SOT-23-3 |
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TP5335K1-G-VAOMOSFET P-CH 350V 85MA SOT23-3 Microchip Technology |
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- | TO-236-3, SC-59, SOT-23-3 | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 350 V | 85mA (Tj) | 4.5V, 10V | 30Ohm @ 200mA, 10V | 2.4V @ 1mA | - | ±20V | 110 pF @ 25 V | - | 360mW (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | SOT-23-3 |
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MSC080SMA120SAMOSFET SIC 1200 V 80 MOHM TO-263 Microchip Technology |
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- | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 35A (Tc) | 20V | 100mOhm @ 15A, 20V | 2.8V @ 1mA | 64 nC @ 20 V | +23V, -10V | 838 pF @ 1000 V | - | 182W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263-7 |
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MSC025SMA330B4MOSFET SIC 3300 V 25 MOHM TO-247 Microchip Technology |
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- | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 3300 V | 104A (Tc) | 20V | 31mOhm @ 40A, 20V | 2.7V @ 7mA | 410 nC @ 20 V | +23V, -10V | 8720 pF @ 2640 V | - | - | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247-4 |