上传BOM
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部重置
应用所有
结果:
| 图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IRFB7746PBFMOSFET N-CH 75V 59A TO220AB Infineon Technologies |
0 | - |
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规格书 |
StrongIRFET™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 75 V | 59A (Tc) | 6V, 10V | 10.6mOhm @ 35A, 10V | 3.7V @ 100µA | 83 nC @ 10 V | ±20V | 3049 pF @ 25 V | - | 99W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220AB |
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IRFB7787PBFMOSFET N-CH 75V 76A TO220AB Infineon Technologies |
0 | - |
|
规格书 |
HEXFET®, StrongIRFET™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 75 V | 76A (Tc) | 6V, 10V | 8.4mOhm @ 46A, 10V | 3.7V @ 100µA | 109 nC @ 10 V | ±20V | 4020 pF @ 25 V | - | 125W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220AB |
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IRFSL7430PBFMOSFET N-CH 40V 195A D2PAK Infineon Technologies |
0 | - |
|
规格书 |
HEXFET®, StrongIRFET™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 195A (Tc) | 6V, 10V | 1.2mOhm @ 100A, 10V | 3.9V @ 250µA | 460 nC @ 10 V | ±20V | 14240 pF @ 25 V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
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IRFSL7434PBFMOSFET N-CH 40V 195A TO262 Infineon Technologies |
0 | - |
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规格书 |
HEXFET®, StrongIRFET™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 195A (Tc) | 6V, 10V | 1.6mOhm @ 100A, 10V | 3.9V @ 250µA | 324 nC @ 10 V | ±20V | 10820 pF @ 25 V | - | 294W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-262 |
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IRFSL7530PBFMOSFET N-CH 60V 195A TO262 Infineon Technologies |
0 | - |
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规格书 |
HEXFET®, StrongIRFET™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 195A (Tc) | 6V, 10V | 2mOhm @ 100A, 10V | 3.7V @ 250µA | 411 nC @ 10 V | ±20V | 13703 pF @ 25 V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-262 |
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IRFSL7534PBFMOSFET N-CH 60V 195A TO262 Infineon Technologies |
0 | - |
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规格书 |
HEXFET®, StrongIRFET™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 195A (Tc) | 6V, 10V | 2.4mOhm @ 100A, 10V | 3.7V @ 250µA | 279 nC @ 10 V | ±20V | 10034 pF @ 25 V | - | 294W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-262 |
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IRFSL7787PBFMOSFET N-CH 75V 76A TO262 Infineon Technologies |
0 | - |
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规格书 |
HEXFET®, StrongIRFET™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 75 V | 76A (Tc) | 6V, 10V | 8.4mOhm @ 46A, 10V | 3.7V @ 100µA | 109 nC @ 10 V | ±20V | 4020 pF @ 25 V | - | 125W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-262 |
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IRLS3813TRLPBFMOSFET N-CH 30V 160A D2PAK Infineon Technologies |
0 | - |
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规格书 |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 160A (Tc) | 10V | 1.95mOhm @ 148A, 10V | 2.35V @ 150µA | 83 nC @ 4.5 V | ±20V | 8020 pF @ 25 V | - | 195W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263AB (D2PAK) |
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AUIRFN8403TRMOSFET N-CH 40V 95A 8PQFN Infineon Technologies |
0 | - |
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规格书 |
HEXFET® | 8-PowerTDFN | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 95A (Tc) | 10V | 3.3mOhm @ 50A, 10V | 3.9V @ 100µA | 98 nC @ 10 V | ±20V | 3174 pF @ 25 V | - | 4.3W (Ta), 94W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | 8-PQFN (5x6) |
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IRF7580MTRPBFMOSFET N-CH 60V 114A DIRECTFET Infineon Technologies |
0 | - |
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规格书 |
StrongIRFET™ | DirectFET™ Isometric ME | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 114A (Tc) | 6V, 10V | 3.6mOhm @ 70A, 10V | 3.7V @ 150µA | 180 nC @ 10 V | ±20V | 6510 pF @ 25 V | - | 115W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | DirectFET™ Isometric ME |
