上传BOM
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部重置
应用所有
结果:
| 图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IRFH7787TRPBFMOSFET N-CH 75V 68A PQFN Infineon Technologies |
0 | - |
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规格书 |
HEXFET®, StrongIRFET™ | 8-PowerTDFN | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 75 V | 68A (Tc) | 6V, 10V | 8mOhm @ 41A, 10V | 3.7V @ 100µA | 110 nC @ 10 V | ±20V | 4030 pF @ 25 V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PQFN (5x6) |
|
IRFSL7730PBFMOSFET N-CH 75V 195A TO262 Infineon Technologies |
0 | - |
|
规格书 |
HEXFET®, StrongIRFET™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 75 V | 195A (Tc) | 6V, 10V | 2.6mOhm @ 100A, 10V | 3.7V @ 250µA | 407 nC @ 10 V | ±20V | 13660 pF @ 25 V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-262 |
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IRFSL7734PBFMOSFET N-CH 75V 183A TO262 Infineon Technologies |
0 | - |
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规格书 |
HEXFET®, StrongIRFET™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 75 V | 183A (Tc) | 6V, 10V | 3.5mOhm @ 100A, 10V | 3.7V @ 250µA | 270 nC @ 10 V | ±20V | 10150 pF @ 25 V | - | 290W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-262 |
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IRFR7740PBFMOSFET N-CH 75V 87A DPAK Infineon Technologies |
0 | - |
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规格书 |
HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tube | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 75 V | 87A (Tc) | 6V, 10V | 7.2mOhm @ 52A, 10V | 3.7V @ 100µA | 126 nC @ 10 V | ±20V | 4430 pF @ 25 V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-252AA (DPAK) |
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IRFR7746PBFMOSFET N-CH 75V 56A DPAK Infineon Technologies |
0 | - |
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规格书 |
HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tube | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 75 V | 56A (Tc) | 6V, 10V | 11.2mOhm @ 35A, 10V | 3.7V @ 100µA | 89 nC @ 10 V | ±20V | 3107 pF @ 25 V | - | 99W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-252AA (DPAK) |
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IRFS7730-7PPBFMOSFET N-CH 75V 240A D2PAK Infineon Technologies |
0 | - |
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规格书 |
StrongIRFET™ | TO-263-7, D2PAK (6 Leads + Tab), TO-263CB | Tube | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 75 V | 240A (Tc) | 6V, 10V | 2mOhm @ 100A, 10V | 3.7V @ 250µA | 428 nC @ 10 V | ±20V | 13970 pF @ 25 V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK (7-Lead) |
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IRFS7730PBFMOSFET N-CH 75V 195A D2PAK Infineon Technologies |
0 | - |
|
规格书 |
HEXFET®, StrongIRFET™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 75 V | 195A (Tc) | 6V, 10V | 2.6mOhm @ 100A, 10V | 3.7V @ 250µA | 407 nC @ 10 V | ±20V | 13660 pF @ 25 V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263AB (D2PAK) |
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IRFS7734-7PPBFMOSFET N-CH 75V 197A D2PAK Infineon Technologies |
0 | - |
|
规格书 |
HEXFET®, StrongIRFET™ | TO-263-7, D2PAK (6 Leads + Tab), TO-263CB | Tube | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 75 V | 197A (Tc) | 6V, 10V | 3.05mOhm @ 100A, 10V | 3.7V @ 150µA | 270 nC @ 10 V | ±20V | 10130 pF @ 25 V | - | 294W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263AB (D2PAK) |
|
IRFS7734PBFMOSFET N-CH 75V 183A D2PAK Infineon Technologies |
0 | - |
|
规格书 |
HEXFET®, StrongIRFET™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 75 V | 183A (Tc) | 6V, 10V | 3.5mOhm @ 100A, 10V | 3.7V @ 250µA | 270 nC @ 10 V | ±20V | 10150 pF @ 25 V | - | 290W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263AB (D2PAK) |
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IRFS7762PBFMOSFET N-CH 75V 85A D2PAK Infineon Technologies |
0 | - |
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规格书 |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 75 V | 85A (Tc) | 6V, 10V | 6.7mOhm @ 51A, 10V | 3.7V @ 100µA | 130 nC @ 10 V | ±20V | 4440 pF @ 25 V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263AB (D2PAK) |
