上传BOM
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部重置
应用所有
结果:
| 图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IPU60R600C6BKMA1MOSFET N-CH 600V 7.3A TO251-3 Infineon Technologies |
0 | - |
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规格书 |
CoolMOS™ | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 600 V | 7.3A (Tc) | 10V | 600mOhm @ 2.4A, 10V | 3.5V @ 200µA | 20.5 nC @ 10 V | ±20V | 440 pF @ 100 V | - | 63W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO251-3 |
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IPU60R950C6BKMA1MOSFET N-CH 600V 4.4A TO251-3 Infineon Technologies |
0 | - |
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规格书 |
CoolMOS™ | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 600 V | 4.4A (Tc) | 10V | 950mOhm @ 1.5A, 10V | 3.5V @ 130µA | 1.5 nC @ 10 V | ±20V | 280 pF @ 100 V | - | 37W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO251-3 |
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IPB65R045C7ATMA1MOSFET N-CH 650V 46A D2PAK Infineon Technologies |
0 | - |
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规格书 |
CoolMOS™ C7 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 650 V | 46A (Tc) | 10V | 45mOhm @ 24.9A, 10V | 4V @ 1.25mA | 93 nC @ 10 V | ±20V | 4340 pF @ 400 V | - | 227W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TO263-3 |
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IPB65R225C7ATMA1MOSFET N-CH 650V 11A D2PAK Infineon Technologies |
0 | - |
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规格书 |
CoolMOS™ C7 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 650 V | 11A (Tc) | 10V | 225mOhm @ 4.8A, 10V | 4V @ 240µA | 20 nC @ 10 V | ±20V | 996 pF @ 400 V | - | 63W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TO263-3 |
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IRFS7434-7PPBFMOSFET N-CH 40V 240A D2PAK Infineon Technologies |
0 | - |
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规格书 |
HEXFET®, StrongIRFET™ | TO-263-7, D2PAK (6 Leads + Tab) | Tube | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 40 V | 240A (Tc) | 6V, 10V | 1mOhm @ 100A, 10V | 3.9V @ 250µA | 315 nC @ 10 V | ±20V | 10250 pF @ 25 V | - | 245W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | D2PAK (7-Lead) |
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IRFR7446PBFMOSFET N-CH 40V 56A TO252 Infineon Technologies |
0 | - |
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规格书 |
HEXFET®, StrongIRFET™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tube | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 40 V | 56A (Tc) | 6V, 10V | 3.9mOhm @ 56A, 10V | 3.9V @ 100µA | 130 nC @ 10 V | ±20V | 3150 pF @ 25 V | - | 98W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-252AA (DPAK) |
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AUIRFP4409MOSFET N-CH 300V 38A TO247AC Infineon Technologies |
0 | - |
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规格书 |
HEXFET® | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 300 V | 38A (Tc) | 10V | 69mOhm @ 24A, 10V | 5V @ 250µA | 125 nC @ 10 V | ±20V | 5168 pF @ 50 V | - | 341W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247AC |
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AUIRFSL8409MOSFET N-CH 40V 195A TO262 Infineon Technologies |
0 | - |
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规格书 |
HEXFET® | TO-262-3 Short Leads, I2PAK | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 195A (Tc) | 10V | 1.2mOhm @ 100A, 10V | 3.9V @ 250µA | 450 nC @ 10 V | ±20V | 14240 pF @ 25 V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-262 |
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IRFHM9391TRPBFMOSFET P-CH 30V 11A 8PQFN Infineon Technologies |
0 | - |
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规格书 |
HEXFET® | 8-PowerTDFN | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 30 V | 11A (Ta) | 4.5V, 10V | 14.6mOhm @ 11A, 10V | 2.4V @ 25µA | 16 nC @ 10 V | ±25V | 1543 pF @ 25 V | - | 2.6W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-PQFN (3.3x3.3), Power33 |
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IRL6283MTRPBFMOSFET N-CH 20V 38A DIRECTFET Infineon Technologies |
0 | - |
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规格书 |
HEXFET®, StrongIRFET™ | DirectFET™ Isometric MD | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20 V | 38A (Ta), 211A (Tc) | 2.5V, 4.5V | 0.75mOhm @ 50A, 10V | 1.1V @ 100µA | 158 nC @ 4.5 V | ±12V | 8292 pF @ 10 V | - | 2.1W (Ta), 63W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | DIRECTFET™ MD |
