上传BOM
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部重置
应用所有
结果:
| 图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IPA65R150CFDXKSA1MOSFET N-CH 650V 22.4A TO220 Infineon Technologies |
0 | - |
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规格书 |
CoolMOS™ | TO-220-3 Full Pack | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 650 V | 22.4A (Tc) | 10V | 150mOhm @ 9.3A, 10V | 4.5V @ 1mA | 86 nC @ 10 V | ±20V | 2340 pF @ 100 V | - | 34.7W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-3-111 |
|
IPB65R099C6ATMA1MOSFET N-CH 650V 38A D2PAK Infineon Technologies |
0 | - |
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规格书 |
CoolMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 650 V | 38A (Tc) | 10V | 99mOhm @ 12.8A, 10V | 3.5V @ 1.2mA | 127 nC @ 10 V | ±20V | 2780 pF @ 100 V | - | 278W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TO263-3 |
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IPI65R099C6XKSA1MOSFET N-CH 650V 38A TO262-3 Infineon Technologies |
0 | - |
|
规格书 |
CoolMOS™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 650 V | 38A (Tc) | 10V | 99mOhm @ 12.8A, 10V | 3.5V @ 1.2mA | 127 nC @ 10 V | ±20V | 2780 pF @ 100 V | - | 278W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO262-3-1 |
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IPP60R074C6XKSA1MOSFET N-CH 600V 57.7A TO220-3 Infineon Technologies |
0 | - |
|
规格书 |
CoolMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 57.7A (Tc) | 10V | 74mOhm @ 21A, 10V | 3.5V @ 1.4mA | 138 nC @ 10 V | ±20V | 3020 pF @ 100 V | - | 480.8W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-3 |
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IPP65R074C6XKSA1MOSFET N-CH 650V 57.7A TO220-3 Infineon Technologies |
0 | - |
|
规格书 |
CoolMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 650 V | 57.7A (Tc) | 10V | 74mOhm @ 13.9A, 10V | 3.5V @ 1.4mA | 17 nC @ 10 V | ±20V | 3020 pF @ 100 V | - | 480.8W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-3 |
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IPP65R099C6XKSA1MOSFET N-CH 650V 38A TO220-3 Infineon Technologies |
0 | - |
|
规格书 |
CoolMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 650 V | 38A (Tc) | 10V | 99mOhm @ 12.8A, 10V | 3.5V @ 1.2mA | 15 nC @ 10 V | ±20V | 2780 pF @ 100 V | - | 278W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-3 |
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IPP65R150CFDXKSA1MOSFET N-CH 650V 22.4A TO220-3 Infineon Technologies |
0 | - |
|
规格书 |
CoolMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 650 V | 22.4A (Tc) | 10V | 150mOhm @ 9.3A, 10V | 4.5V @ 900µA | 86 nC @ 10 V | ±20V | 2340 pF @ 100 V | - | 195.3W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-3 |
|
IPS65R1K4C6AKMA1MOSFET N-CH 650V 3.2A TO251-3 Infineon Technologies |
0 | - |
|
规格书 |
CoolMOS™ | TO-251-3 Stub Leads, IPAK | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 650 V | 3.2A (Tc) | 10V | 1.4Ohm @ 1A, 10V | 3.5V @ 100µA | 10.5 nC @ 10 V | ±20V | 225 pF @ 100 V | - | 28W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO251-3-11 |
|
IPU50R1K4CEBKMA1MOSFET N-CH 500V 3.1A TO251-3 Infineon Technologies |
0 | - |
|
规格书 |
CoolMOS™ | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 3.1A (Tc) | 13V | 1.4Ohm @ 900mA, 13V | 3.5V @ 70µA | 8.2 nC @ 10 V | ±20V | 178 pF @ 100 V | - | 25W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO251-3 |
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IPU50R2K0CEBKMA1MOSFET N-CH 500V 2.4A TO251-3 Infineon Technologies |
0 | - |
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规格书 |
CoolMOS™ | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 2.4A (Tc) | 13V | 2Ohm @ 600mA, 13V | 3.5V @ 50µA | 6 nC @ 10 V | ±20V | 124 pF @ 100 V | - | 22W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO251-3 |
