上传BOM
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部重置
应用所有
结果:
| 图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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AUIRFU3607MOSFET N CH 75V 56A I-PAK Infineon Technologies |
0 | - |
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规格书 |
HEXFET® | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 75 V | 56A (Tc) | 10V | 9mOhm @ 46A, 10V | 4V @ 100µA | 84 nC @ 10 V | ±20V | 3070 pF @ 50 V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | IPAK |
|
IRF7748L1TRPBFMOSFET N-CH 60V 28A DIRECTFET Infineon Technologies |
0 | - |
|
规格书 |
- | DirectFET™ Isometric L6 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 28A (Ta), 148A (Tc) | 10V | 2.2mOhm @ 89A, 10V | 4V @ 250µA | 220 nC @ 10 V | ±20V | 8075 pF @ 50 V | - | 3.3W (Ta), 94W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | DIRECTFET L6 |
|
AUIRFS8408-7TRRMOSFET N-CH 40V 240A D2PAK Infineon Technologies |
0 | - |
|
规格书 |
HEXFET® | TO-263-7, D2PAK (6 Leads + Tab), TO-263CB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 240A (Tc) | 10V | 1mOhm @ 100A, 10V | 3.9V @ 250µA | 315 nC @ 10 V | ±20V | 10250 pF @ 25 V | - | 294W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-7-900 |
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AUIRFS8405TRLMOSFET N-CH 40V 120A D2PAK Infineon Technologies |
0 | - |
|
规格书 |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 120A (Tc) | 10V | 2.3mOhm @ 100A, 10V | 3.9V @ 100µA | 161 nC @ 10 V | ±20V | 5193 pF @ 25 V | - | 163W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-3 |
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AUIRFSL8405MOSFET N-CH 40V 120A TO262 Infineon Technologies |
0 | - |
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规格书 |
HEXFET® | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 120A (Tc) | 10V | 2.3mOhm @ 100A, 10V | 3.9V @ 100µA | 161 nC @ 10 V | ±20V | 5193 pF @ 25 V | - | 163W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-262 |
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AUIRFU8403MOSFET N-CH 40V 100A IPAK Infineon Technologies |
0 | - |
|
规格书 |
HEXFET® | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 100A (Tc) | 10V | 3.1mOhm @ 76A, 10V | 3.9V @ 100µA | 99 nC @ 10 V | ±20V | 3171 pF @ 25 V | - | 99W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | IPAK |
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AUIRFS8403MOSFET N-CH 40V 123A D2PAK Infineon Technologies |
0 | - |
|
规格书 |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 123A (Tc) | 10V | 3.3mOhm @ 70A, 10V | 3.9V @ 100µA | 93 nC @ 10 V | ±20V | 3183 pF @ 25 V | - | 99W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-3 |
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AUIRFSL8403MOSFET N-CH 40V 123A TO262 Infineon Technologies |
0 | - |
|
规格书 |
HEXFET® | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 123A (Tc) | 10V | 3.3mOhm @ 70A, 10V | 3.9V @ 100µA | 93 nC @ 10 V | ±20V | 3183 pF @ 25 V | - | 99W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-262 |
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AUIRFS8405MOSFET N-CH 40V 120A D2PAK Infineon Technologies |
0 | - |
|
规格书 |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 120A (Tc) | 10V | 2.3mOhm @ 100A, 10V | 3.9V @ 100µA | 161 nC @ 10 V | ±20V | 5193 pF @ 25 V | - | 163W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-3 |
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AUIRFS8407MOSFET N-CH 40V 195A D2PAK Infineon Technologies |
0 | - |
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规格书 |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 195A (Tc) | 10V | 1.8mOhm @ 100A, 10V | 4V @ 150µA | 225 nC @ 10 V | ±20V | 7330 pF @ 25 V | - | 230W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-3 |
