上传BOM
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部重置
应用所有
结果:
| 图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IMBG65R048M1HXTMA1SILICON CARBIDE MOSFET PG-TO263- Infineon Technologies |
865 | - |
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规格书 |
CoolSiC™ | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 45A (Tc) | 18V | 64mOhm @ 20.1A, 18V | 5.7V @ 6mA | 33 nC @ 18 V | +23V, -5V | 1118 pF @ 400 V | - | 183W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-7-12 |
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SPW35N60CFDFKSA1MOSFET N-CH 600V 34.1A TO247-3 Infineon Technologies |
240 | - |
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规格书 |
CoolMOS™ | TO-247-3 | Tube | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 600 V | 34.1A (Tc) | 10V | 118mOhm @ 21.6A, 10V | 5V @ 1.9mA | 212 nC @ 10 V | ±20V | 5060 pF @ 25 V | - | 313W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO247-3-1 |
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IMZA65R048M1HXKSA1MOSFET 650V NCH SIC TRENCH Infineon Technologies |
420 | - |
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规格书 |
CoolSiC™ | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 39A (Tc) | 18V | 64mOhm @ 20.1A, 18V | 5.7V @ 6mA | 33 nC @ 18 V | +23V, -5V | 1118 pF @ 400 V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO247-4-3 |
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IPW65R048CFDAFKSA1MOSFET N-CH 650V 63.3A TO247-3 Infineon Technologies |
284 | - |
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规格书 |
CoolMOS™ | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 63.3A (Tc) | 10V | 48mOhm @ 29.4A, 10V | 4.5V @ 2.9mA | 270 nC @ 10 V | ±20V | 7440 pF @ 100 V | - | 500W (Tc) | -40°C ~ 150°C (TJ) | Automotive | AEC-Q101 | Through Hole | PG-TO247-3 |
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IPW65R029CFD7XKSA1MOSFET N-CH 650V 69A TO247-3 Infineon Technologies |
154 | - |
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规格书 |
CoolMOS™ | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 69A (Tc) | - | 29mOhm @ 35.8A, 10V | 4.5V @ 1.79mA | 145 nC @ 10 V | ±20V | 7149 pF @ 400 V | - | 305W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO247-3 |
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IPW65R041CFDFKSA2MOSFET N-CH 650V 68.5A TO247-3 Infineon Technologies |
611 | - |
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规格书 |
CoolMOS™ CFD2 | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 68.5A (Tc) | 10V | 41mOhm @ 33.1A, 10V | 4.5V @ 3.3mA | 300 nC @ 10 V | ±20V | 8400 pF @ 100 V | - | 500W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO247-3 |
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IMBG65R030M1HXTMA1SILICON CARBIDE MOSFET PG-TO263- Infineon Technologies |
924 | - |
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规格书 |
CoolSiC™ | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 63A (Tc) | 18V | 42mOhm @ 29.5A, 18V | 5.7V @ 8.8mA | 49 nC @ 18 V | +23V, -5V | 1643 pF @ 400 V | - | 234W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-7-12 |
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IPZ65R019C7XKSA1MOSFET N-CH 650V 75A TO247-4 Infineon Technologies |
1,153 | - |
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规格书 |
CoolMOS™ C7 | TO-247-4 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 75A (Tc) | 10V | 19mOhm @ 58.3A, 10V | 4V @ 2.92mA | 215 nC @ 10 V | ±20V | 9900 pF @ 400 V | - | 446W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO247-4 |
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BSD316SNH6327XTSA1MOSFET N-CH 30V 1.4A SOT363-6 Infineon Technologies |
5,735 | - |
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规格书 |
OptiMOS™ | 6-VSSOP, SC-88, SOT-363 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 1.4A (Ta) | 4.5V, 10V | 160mOhm @ 1.4A, 10V | 2V @ 3.7µA | 0.6 nC @ 5 V | ±20V | 94 pF @ 15 V | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-SOT363-PO |
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IPP80R900P7XKSA1MOSFET N-CH 800V 6A TO220-3 Infineon Technologies |
0 | - |
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规格书 |
CoolMOS™ P7 | TO-220-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 6A (Tc) | 10V | 900mOhm @ 2.2A, 10V | 3.5V @ 110µA | 15 nC @ 10 V | ±20V | 350 pF @ 500 V | - | 45W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-3 |
