上传BOM
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部重置
应用所有
结果:
| 图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IPL65R195C7AUMA1MOSFET N-CH 650V 12A 4VSON Infineon Technologies |
1,137 | - |
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规格书 |
CoolMOS™ C7 | 4-PowerTSFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 12A (Tc) | 10V | 195mOhm @ 2.9A, 10V | 4V @ 290µA | 23 nC @ 10 V | ±20V | 1150 pF @ 400 V | - | 75W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | PG-VSON-4 |
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IPP019N08NF2SAKMA1TRENCH 40<-<100V Infineon Technologies |
896 | - |
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规格书 |
StrongIRFET™ 2 | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 32A (Ta), 191A (Tc) | 6V, 10V | 1.9mOhm @ 100A, 10V | 3.8V @ 194µA | 186 nC @ 10 V | ±20V | 8700 pF @ 40 V | - | 3.8W (Ta), 250W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3 |
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IPB80N06S2L06ATMA2MOSFET N-CH 55V 80A TO263-3 Infineon Technologies |
891 | - |
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规格书 |
OptiMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 80A (Tc) | 4.5V, 10V | 6mOhm @ 69A, 10V | 2V @ 180µA | 150 nC @ 10 V | ±20V | 3800 pF @ 25 V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-3-2 |
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IRFB3207PBFMOSFET N-CH 75V 170A TO220AB Infineon Technologies |
930 | - |
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规格书 |
HEXFET® | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 75 V | 170A (Tc) | 10V | 4.5mOhm @ 75A, 10V | 4V @ 250µA | 260 nC @ 10 V | ±20V | 7600 pF @ 50 V | - | 330W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220AB |
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IPB039N10N3GATMA1MOSFET N-CH 100V 160A TO263-7 Infineon Technologies |
29,577 | - |
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规格书 |
OptiMOS™ | TO-263-7, D2PAK (6 Leads + Tab) | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 160A (Tc) | 6V, 10V | 3.9mOhm @ 100A, 10V | 3.5V @ 160µA | 117 nC @ 10 V | ±20V | 8410 pF @ 50 V | - | 214W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-7 |
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IRFB3206GPBFMOSFET N-CH 60V 120A TO220AB Infineon Technologies |
522 | - |
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规格书 |
HEXFET® | TO-220-3 | Tube | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 60 V | 120A (Tc) | 10V | 3mOhm @ 75A, 10V | 4V @ 150µA | 170 nC @ 10 V | ±20V | 6540 pF @ 50 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220AB |
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SPA11N80C3XKSA2MOSFET N-CH 800V 11A TO220-3 Infineon Technologies |
189 | - |
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规格书 |
CoolMOS™ | TO-220-3 Isolated Tab | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 11A (Tc) | 10V | 450mOhm @ 7.1A, 10V | 3.9V @ 680µA | 85 nC @ 10 V | ±20V | 1600 pF @ 100 V | - | 34W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-3 |
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IPP65R190CFDXKSA2MOSFET N-CH 650V 17.5A TO220-3 Infineon Technologies |
1,391 | - |
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规格书 |
CoolMOS™ CFD2 | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 17.5A (Tc) | 10V | 190mOhm @ 7.3A, 10V | 4.5V @ 700µA | 68 nC @ 10 V | ±20V | 1850 pF @ 100 V | - | 151W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-3 |
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IPL60R125P7AUMA1MOSFET N-CH 600V 27A 4VSON Infineon Technologies |
5,365 | - |
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规格书 |
CoolMOS™ P7 | 4-PowerTSFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 27A (Tc) | 10V | 125mOhm @ 8.2A, 10V | 4V @ 410µA | 36 nC @ 10 V | ±20V | 1544 pF @ 400 V | - | 111W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | PG-VSON-4 |
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IRF3808STRLPBFMOSFET N-CH 75V 106A D2PAK Infineon Technologies |
2,847 | - |
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规格书 |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 75 V | 106A (Tc) | 10V | 7mOhm @ 82A, 10V | 4V @ 250µA | 220 nC @ 10 V | ±20V | 5310 pF @ 25 V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
