上传BOM
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部重置
应用所有
结果:
| 图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IPP024N08NF2SAKMA1TRENCH 40<-<100V Infineon Technologies |
234 | - |
|
规格书 |
StrongIRFET™ 2 | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 28A (Ta), 182A (Tc) | 6V, 10V | 2.4mOhm @ 100A, 10V | 3.8V @ 139µA | 133 nC @ 10 V | ±20V | 6200 pF @ 40 V | - | 3.8W (Ta), 214W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3 |
|
IPW60R280P6FKSA1MOSFET N-CH 600V 13.8A TO247-3 Infineon Technologies |
192 | - |
|
规格书 |
CoolMOS™ P6 | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 13.8A (Tc) | 10V | 280mOhm @ 5.2A, 10V | 4.5V @ 430µA | 25.5 nC @ 10 V | ±20V | 1190 pF @ 100 V | - | 104W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO247-3 |
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IPA60R160P7XKSA1MOSFET N-CH 600V 20A TO220 Infineon Technologies |
154 | - |
|
规格书 |
CoolMOS™ P7 | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 20A (Tc) | 10V | 160mOhm @ 6.3A, 10V | 4V @ 350µA | 31 nC @ 10 V | ±20V | 1317 pF @ 400 V | - | 26W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220 Full Pack |
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IPB70N10S312ATMA1MOSFET N-CH 100V 70A TO263-3 Infineon Technologies |
459 | - |
|
规格书 |
OptiMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 70A (Tc) | 10V | 11.3mOhm @ 70A, 10V | 4V @ 83µA | 66 nC @ 10 V | ±20V | 4355 pF @ 25 V | - | 125W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-3-2 |
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AUIRF540ZMOSFET N-CH 100V 36A TO220AB Infineon Technologies |
2,814 | - |
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规格书 |
HEXFET® | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 36A (Tc) | 10V | 26.5mOhm @ 22A, 10V | 4V @ 250µA | 63 nC @ 10 V | ±20V | 1770 pF @ 25 V | - | 92W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220AB |
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IPA60R170CFD7XKSA1MOSFET N-CH 650V 8A TO220 Infineon Technologies |
212 | - |
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规格书 |
CoolMOS™ CFD7 | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 8A (Tc) | 10V | 170mOhm @ 6A, 10V | 4.5V @ 300µA | 28 nC @ 10 V | ±20V | 1199 pF @ 400 V | - | 26W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-FP |
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IPP60R170CFD7XKSA1MOSFET N-CH 650V 14A TO220-3 Infineon Technologies |
117 | - |
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规格书 |
CoolMOS™ CFD7 | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 14A (Tc) | 10V | 170mOhm @ 6A, 10V | 4.5V @ 300µA | 28 nC @ 10 V | ±20V | 1199 pF @ 400 V | - | 75W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-3 |
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IPP037N08N3GXKSA1MOSFET N-CH 80V 100A TO220-3 Infineon Technologies |
1,665 | - |
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规格书 |
OptiMOS™ | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 100A (Tc) | 6V, 10V | 3.75mOhm @ 100A, 10V | 3.5V @ 155µA | 117 nC @ 10 V | ±20V | 8110 pF @ 40 V | - | 214W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3 |
|
IRF9383MTRPBFMOSFET P-CH 30V 22A DIRECTFET Infineon Technologies |
4,324 | - |
|
规格书 |
HEXFET® | DirectFET™ Isometric MX | Tape & Reel (TR) | Not For New Designs | P-Channel | MOSFET (Metal Oxide) | 30 V | 22A (Ta), 160A (Tc) | 4.5V, 10V | 2.9mOhm @ 22A, 10V | 2.4V @ 150µA | 130 nC @ 10 V | ±20V | 7305 pF @ 15 V | - | 2.1W (Ta), 113W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | DIRECTFET™ MX |
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IPA95R310PFD7XKSA1MOSFET N-CH 950V 8.7A TO220-3 Infineon Technologies |
475 | - |
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规格书 |
CoolMOS™ | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 950 V | 8.7A (Tc) | 10V | 310mOhm @ 10.4A, 10V | 3.5V @ 520µA | 61 nC @ 10 V | ±20V | 1765 pF @ 400 V | - | 31W (Tc) | -55°C ~ 150°C | - | - | Through Hole | PG-TO220-3-313 |
