场效应晶体管(FET)、MOSFET 阵列

    制造商 系列 封装/外壳 包装 产品状态 技术 配置 FET 特性 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装





























































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































    全部重置
    应用所有
    结果:
    图片 型号 库存 价格 数量 规格书 系列 封装/外壳 包装 产品状态 技术 配置 FET 特性 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装
    MSCMC120AM03CT6LIAG

    MSCMC120AM03CT6LIAG

    MOSFET 2N-CH 1200V 631A SP6C LI

    Microchip Technology

    0
    MSCMC120AM03CT6LIAG

    规格书

    - Module Tube Last Time Buy Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 1200V (1.2kV) 631A (Tc) 3.4mOhm @ 500A, 20V 4V @ 150mA 1610nC @ 20V 27900pF @ 1000V 2778W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount SP6C LI
    MSCMC90AM12C3AG

    MSCMC90AM12C3AG

    MOSFET 900V 110A SP3F

    Microchip Technology

    0
    MSCMC90AM12C3AG

    规格书

    - Module Tube Active Silicon Carbide (SiC) - - 900V 110A (Tc) - - - - - - - - Chassis Mount SP3F
    MSCMC120AM07CT6LIAG

    MSCMC120AM07CT6LIAG

    MOSFET 2N-CH 1200V 264A SP6C LI

    Microchip Technology

    0
    MSCMC120AM07CT6LIAG

    规格书

    - Module Tube Last Time Buy Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 1200V (1.2kV) 264A (Tc) 8.7mOhm @ 240A, 20V 4V @ 60mA 690nC @ 20V 11400pF @ 1000V 1350W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount SP6C LI
    MSCMC170AM08CT6LIAG

    MSCMC170AM08CT6LIAG

    MOSFET 2N-CH 1700V 280A SP6C LI

    Microchip Technology

    0
    MSCMC170AM08CT6LIAG

    规格书

    - Module Tube Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 1700V (1.7kV) 280A (Tc) 11.7mOhm @ 300A, 20V 4V @ 108mA 1128nC @ 20V 22000pF @ 1000V 1780W (Tc) -40°C ~ 150°C (TJ) - - Chassis Mount SP6C LI
    MSCSM120HM16CTBL3NG

    MSCSM120HM16CTBL3NG

    MOSFET 4N-CH 1200V 150A

    Microchip Technology

    0
    MSCSM120HM16CTBL3NG

    规格书

    - Module Bulk Active Silicon Carbide (SiC) 4 N-Channel (Phase Leg) - 1200V (1.2kV) 150A 16mOhm @ 80A, 20V 2.8V @ 2mA 464nC @ 20V 6040pF @ 1000V 560W -55°C ~ 175°C (TJ) - - Chassis Mount -
    MSCSM120HM16TBL3NG

    MSCSM120HM16TBL3NG

    MOSFET 6N-CH 1200V 150A

    Microchip Technology

    0
    MSCSM120HM16TBL3NG

    规格书

    - Module Bulk Active Silicon Carbide (SiC) 6 N-Channel (Phase Leg) - 1200V (1.2kV) 150A 16mOhm @ 80A, 20V 2.8V @ 6mA 464nC @ 20V 6040pF @ 1000V 560W -55°C ~ 175°C (TJ) - - Chassis Mount -
    MSCSM120DDUM16TBL3NG

    MSCSM120DDUM16TBL3NG

    MOSFET 4N-CH 1200V 150A

    Microchip Technology

    0
    MSCSM120DDUM16TBL3NG

    规格书

    - Module Bulk Active Silicon Carbide (SiC) 4 N-Channel, Common Source - 1200V (1.2kV) 150A 16mOhm @ 80A, 20V 2.8V @ 6mA 464nC @ 20V 6040pF @ 1000V 560W -55°C ~ 175°C (TJ) - - Chassis Mount -
    MSCSM170AM029T6LIAG

    MSCSM170AM029T6LIAG

    SIC MOSFET

    Microchip Technology

    0
    MSCSM170AM029T6LIAG

    规格书

    - - Box Active - - - - - - - - - - - - - - -
    MSCSM120AM13CT6AG

    MSCSM120AM13CT6AG

    SIC MOSFET

    Microchip Technology

    0
    MSCSM120AM13CT6AG

    规格书

    - - Box Active - - - - - - - - - - - - - - -
    MSCSM70XM75CTYZBNMG

    MSCSM70XM75CTYZBNMG

    MOSFET 6N-CH 700V 31A

    Microchip Technology

    0
    MSCSM70XM75CTYZBNMG

    规格书

    - Module Bulk Active Silicon Carbide (SiC) 6 N-Channel (3-Phase Bridge) - 700V 31A (Tc), 52A (Tc) 75mOhm @ 20A, 20V, 44mOhm @ 30A, 20V 2.4V @ 1mA, 2.7V @ 2mA 56nC @ 20V, 99nC @ 20V 1175pF @ 700V, 2010pF @ 700V 90W (Tc), 141W (Tc) -55°C ~ 175°C (TJ) - - Chassis Mount -
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