场效应晶体管(FET)、MOSFET 阵列

    制造商 系列 封装/外壳 包装 产品状态 技术 配置 FET 特性 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装





























































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































    全部重置
    应用所有
    结果:
    图片 型号 库存 价格 数量 规格书 系列 封装/外壳 包装 产品状态 技术 配置 FET 特性 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装
    APTC60AM45B1G

    APTC60AM45B1G

    MOSFET 3N-CH 600V 49A SP1

    Microchip Technology

    0
    APTC60AM45B1G

    规格书

    CoolMOS™ SP1 Bulk Active MOSFET (Metal Oxide) 3 N Channel (Phase Leg + Boost Chopper) - 600V 49A 45mOhm @ 24.5A, 10V 3.9V @ 3mA 150nC @ 10V 7200pF @ 25V 250W -40°C ~ 150°C (TJ) - - Chassis Mount SP1
    APTM10HM19FT3G

    APTM10HM19FT3G

    MOSFET 4N-CH 100V 70A SP3

    Microchip Technology

    0
    APTM10HM19FT3G

    规格书

    - SP3 Bulk Active MOSFET (Metal Oxide) 4 N-Channel (Full Bridge) - 100V 70A 21mOhm @ 35A, 10V 4V @ 1mA 200nC @ 10V 5100pF @ 25V 208W -40°C ~ 150°C (TJ) - - Chassis Mount SP3
    APTC60HM70T3G

    APTC60HM70T3G

    MOSFET 4N-CH 600V 39A SP3

    Microchip Technology

    0
    APTC60HM70T3G

    规格书

    - SP3 Bulk Active MOSFET (Metal Oxide) 4 N-Channel (Full Bridge) - 600V 39A 70mOhm @ 39A, 10V 3.9V @ 2.7mA 259nC @ 10V 7000pF @ 25V 250W -40°C ~ 150°C (TJ) - - Chassis Mount SP3
    APTC60AM45BC1G

    APTC60AM45BC1G

    MOSFET 3N-CH 600V 49A SP1

    Microchip Technology

    0
    APTC60AM45BC1G

    规格书

    CoolMOS™ SP1 Bulk Active MOSFET (Metal Oxide) 3 N Channel (Phase Leg + Boost Chopper) - 600V 49A 45mOhm @ 24.5A, 10V 3.9V @ 3mA 150nC @ 10V 7200pF @ 25V 250W -40°C ~ 150°C (TJ) - - Chassis Mount SP1
    APTM100DSK35T3G

    APTM100DSK35T3G

    MOSFET 2N-CH 1000V 22A SP3

    Microchip Technology

    0
    APTM100DSK35T3G

    规格书

    - SP3 Bulk Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 1000V (1kV) 22A 420mOhm @ 11A, 10V 5V @ 2.5mA 186nC @ 10V 5200pF @ 25V 390W -40°C ~ 150°C (TJ) - - Chassis Mount SP3
    APTM10DSKM09T3G

    APTM10DSKM09T3G

    MOSFET 2N-CH 100V 139A SP3

    Microchip Technology

    0

    -

    - SP3 Bulk Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 100V 139A 10mOhm @ 69.5A, 10V 4V @ 2.5mA 350nC @ 10V 9875pF @ 25V 390W -40°C ~ 150°C (TJ) - - Chassis Mount SP3
    APTM100H46FT3G

    APTM100H46FT3G

    MOSFET 4N-CH 1000V 19A SP3

    Microchip Technology

    0
    APTM100H46FT3G

    规格书

    POWER MOS 8™ SP3 Bulk Active MOSFET (Metal Oxide) 4 N-Channel (Full Bridge) - 1000V (1kV) 19A 552mOhm @ 16A, 10V 5V @ 2.5mA 260nC @ 10V 6800pF @ 25V 357W -40°C ~ 150°C (TJ) - - Chassis Mount SP3
    APTC60HM70RT3G

    APTC60HM70RT3G

    MOSFET 4N-CH 600V 39A SP3

    Microchip Technology

    0
    APTC60HM70RT3G

    规格书

    CoolMOS™ SP3 Bulk Active MOSFET (Metal Oxide) 4 N-Channel (Full Bridge) + Bridge Rectifier - 600V 39A 70mOhm @ 39A, 10V 3.9V @ 2.7mA 259nC @ 10V 7000pF @ 25V 250W -40°C ~ 150°C (TJ) - - - SP3
    APTC60AM24T1G

    APTC60AM24T1G

    MOSFET 2N-CH 600V 95A SP1

    Microchip Technology

    0
    APTC60AM24T1G

    规格书

    - SP1 Bulk Active MOSFET (Metal Oxide) 2 N-Channel (Half Bridge) - 600V 95A 24mOhm @ 47.5A, 10V 3.9V @ 5mA 300nC @ 10V 14400pF @ 25V 462W -40°C ~ 150°C (TJ) - - Chassis Mount SP1
    APTC60HM45T1G

    APTC60HM45T1G

    MOSFET 4N-CH 600V 49A SP1

    Microchip Technology

    0
    APTC60HM45T1G

    规格书

    - SP1 Bulk Active MOSFET (Metal Oxide) 4 N-Channel (Full Bridge) - 600V 49A 45mOhm @ 24.5A, 10V 3.9V @ 3mA 150nC @ 10V 7200pF @ 25V 250W -40°C ~ 150°C (TJ) - - Chassis Mount SP1
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