上传BOM
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部重置
应用所有
结果:
| 图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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FDZ663PFDZ663P - FDZ663P - MOSFET P-CHA Fairchild Semiconductor |
60,000 | - |
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规格书 |
PowerTrench® | 4-XFBGA, WLCSP | Bulk | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 2.7A (Ta) | 1.5V, 4.5V | 134mOhm @ 2A, 4.5V | 1.2V @ 250µA | 8.2 nC @ 4.5 V | ±8V | 525 pF @ 10 V | - | 1.3W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 4-WLCSP (0.8x0.8) |
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FDC653NSMALL SIGNAL FIELD-EFFECT TRANSI Fairchild Semiconductor |
2,505 | - |
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规格书 |
- | SOT-23-6 Thin, TSOT-23-6 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 5A (Ta) | 4.5V, 10V | 35mOhm @ 5A, 10V | 2V @ 250µA | 17 nC @ 10 V | ±20V | 350 pF @ 15 V | - | 1.6W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | SuperSOT™-6 |
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FDZ661PZSMALL SIGNAL FIELD-EFFECT TRANSI Fairchild Semiconductor |
106,670 | - |
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规格书 |
PowerTrench® | 4-XFBGA, WLCSP | Bulk | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 2.6A (Ta) | 1.5V, 4.5V | 140mOhm @ 2A, 4.5V | 1.2V @ 250µA | 8.8 nC @ 4.5 V | ±8V | 555 pF @ 10 V | - | 1.3W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 4-WLCSP (0.8x0.8) |
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FDMS7694POWER FIELD-EFFECT TRANSISTOR, 1 Fairchild Semiconductor |
3,717 | - |
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规格书 |
PowerTrench® | 8-PowerTDFN | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 13.2A (Ta), 20A (Tc) | 4.5V, 10V | 9.5mOhm @ 13.2A, 10V | 3V @ 250µA | 22 nC @ 10 V | ±20V | 1410 pF @ 15 V | - | 2.5W (Ta), 27W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-PQFN (5x6) |
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FDMC88849A, 30V, 0.019OHM, N-CHANNEL POW Fairchild Semiconductor |
198,694 | - |
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规格书 |
PowerTrench® | 8-PowerWDFN | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 9A (Ta), 15A (Tc) | 4.5V, 10V | 19mOhm @ 9A, 10V | 2.5V @ 250µA | 14 nC @ 10 V | ±20V | 685 pF @ 15 V | - | 2.3W (Ta), 18W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-MLP (3.3x3.3) |
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FDS6612ASMALL SIGNAL FIELD-EFFECT TRANSI Fairchild Semiconductor |
86,571 | - |
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规格书 |
PowerTrench® | 8-SOIC (0.154", 3.90mm Width) | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 8.4A (Ta) | 4.5V, 10V | 22mOhm @ 8.4A, 10V | 3V @ 250µA | 7.6 nC @ 5 V | ±20V | 560 pF @ 15 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SOIC |
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FDD5N50TM4A, 500V, 1.4OHM, N-CHANNEL POWE Fairchild Semiconductor |
2,984 | - |
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规格书 |
PowerTrench® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 4A (Tc) | 10V | 1.4Ohm @ 2A, 10V | 5V @ 250µA | 15 nC @ 10 V | ±30V | 640 pF @ 25 V | - | 40W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252 (DPAK) |
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FDS8882POWER FIELD-EFFECT TRANSISTOR, 9 Fairchild Semiconductor |
54,025 | - |
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规格书 |
PowerTrench® | 8-SOIC (0.154", 3.90mm Width) | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 9A (Ta) | 4.5V, 10V | 20mOhm @ 9A, 10V | 3V @ 250µA | 20 nC @ 10 V | ±20V | 940 pF @ 15 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SOIC |
|
FDD8796POWER FIELD-EFFECT TRANSISTOR, 3 Fairchild Semiconductor |
23,432 | - |
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规格书 |
PowerTrench® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 25 V | 35A (Tc) | 4.5V, 10V | 5.7mOhm @ 35A, 10V | 2.5V @ 250µA | 52 nC @ 10 V | ±20V | 2610 pF @ 13 V | - | 88W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-252 (DPAK) |
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FDME820NZTSMALL SIGNAL FIELD-EFFECT TRANSI Fairchild Semiconductor |
9,500 | - |
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规格书 |
PowerTrench® | 6-PowerUFDFN | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 20 V | 9A (Ta) | 1.8V, 4.5V | 18mOhm @ 9A, 4.5V | 1V @ 250µA | 8.5 nC @ 4.5 V | ±12V | 865 pF @ 10 V | - | 2.1W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | MicroFet 1.6x1.6 Thin |
