上传BOM
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部重置
应用所有
结果:
| 图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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SCH1331-TL-WPOWER MOSFET Fairchild Semiconductor |
10,000 | - |
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规格书 |
- | SOT-563, SOT-666 | Bulk | Active | P-Channel | MOSFET (Metal Oxide) | 12 V | 3A (Ta) | 1.5V, 4.5V | 84mOhm @ 1.5A, 4.5V | 1.3V @ 1mA | 5.6 nC @ 4.5 V | ±10V | 405 pF @ 6 V | - | 1W (Ta) | 150°C (TJ) | - | - | Surface Mount | SOT-563/SCH6 |
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FDN352APSMALL SIGNAL FIELD-EFFECT TRANSI Fairchild Semiconductor |
43,628 | - |
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规格书 |
PowerTrench® | TO-236-3, SC-59, SOT-23-3 | Bulk | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 1.3A (Ta) | 4.5V, 10V | 180mOhm @ 1.3A, 10V | 2.5V @ 250µA | 1.9 nC @ 4.5 V | ±25V | 150 pF @ 15 V | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | SOT-23-3 |
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FDN336PSMALL SIGNAL FIELD-EFFECT TRANSI Fairchild Semiconductor |
9,665 | - |
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规格书 |
PowerTrench® | TO-236-3, SC-59, SOT-23-3 | Bulk | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 1.3A (Ta) | 2.5V, 4.5V | 200mOhm @ 1.3A, 4.5V | 1.5V @ 250µA | 5 nC @ 4.5 V | ±8V | 330 pF @ 10 V | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | SOT-23-3 |
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FDMS0349POWER FIELD-EFFECT TRANSISTOR Fairchild Semiconductor |
193,000 | - |
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规格书 |
PowerTrench® | 8-PowerTDFN | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 14A (Ta), 20A (Tc) | 4.5V, 10V | 8mOhm @ 14A, 10V | 3V @ 250µA | 22 nC @ 10 V | ±20V | 1410 pF @ 15 V | - | 2.5W (Ta), 27W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-PQFN (5x6), Power56 |
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FDC8886SMALL SIGNAL FIELD-EFFECT TRANSI Fairchild Semiconductor |
124,596 | - |
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规格书 |
PowerTrench® | SOT-23-6 Thin, TSOT-23-6 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 6.5A (Ta), 8A (Tc) | 4.5V, 10V | 23mOhm @ 6.5A, 10V | 3V @ 250µA | 7.4 nC @ 10 V | ±20V | 465 pF @ 15 V | - | 1.6W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | SuperSOT™-6 |
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FDMS0346POWER FIELD-EFFECT TRANSISTOR Fairchild Semiconductor |
96,000 | - |
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规格书 |
PowerTrench® | 8-PowerVDFN | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 25 V | 17A (Ta), 28A (Tc) | 4.5V, 10V | 5.8mOhm @ 17A, 10V | 3V @ 250µA | 25 nC @ 10 V | ±20V | 1625 pF @ 13 V | - | 2.5W (Ta), 33W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | Power56 |
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FDMS0343SPOWER FIELD-EFFECT TRANSISTOR Fairchild Semiconductor |
4,477 | - |
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规格书 |
PowerTrench® | 8-PowerTDFN | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 25 V | 28A (Ta), 49A (Tc) | 4.5V, 10V | 1.95mOhm @ 28A, 10V | 3V @ 1mA | 69 nC @ 10 V | ±20V | 4515 pF @ 13 V | - | 2.5W (Ta), 83W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-PQFN (5x6), Power56 |
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FDC642PSMALL SIGNAL FIELD-EFFECT TRANSI Fairchild Semiconductor |
15,835 | - |
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规格书 |
PowerTrench® | SOT-23-6 Thin, TSOT-23-6 | Bulk | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 4A (Ta) | 2.5V, 4.5V | 65mOhm @ 4A, 4.5V | 1.5V @ 250µA | 16 nC @ 4.5 V | ±8V | 925 pF @ 10 V | - | 1.6W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | SuperSOT™-6 |
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FDMS0348POWER FIELD-EFFECT TRANSISTOR Fairchild Semiconductor |
63,000 | - |
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规格书 |
PowerTrench® | 8-PowerWDFN | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 14A (Ta), 35A (Tc) | 4.5V, 10V | 7mOhm @ 14A, 10V | 3V @ 250µA | 26 nC @ 10 V | ±20V | 1590 pF @ 15 V | - | 2.5W (Ta), 50W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-MLP (5x6) |
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FQN1N60CTASMALL SIGNAL FIELD-EFFECT TRANSI Fairchild Semiconductor |
37,002 | - |
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规格书 |
QFET® | TO-226-3, TO-92-3 (TO-226AA) Formed Leads | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 300mA (Tc) | 10V | 11.5Ohm @ 150mA, 10V | 4V @ 250µA | 6.2 nC @ 10 V | ±30V | 170 pF @ 25 V | - | 1W (Ta), 3W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-92-3 |
