制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | FET 特性 | 功耗(最大值) | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | FET 特性 | 功耗(最大值) | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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FDS6692APOWER FIELD-EFFECT TRANSISTOR, 9 Fairchild Semiconductor |
1,731 | - |
|
![]() 规格书 |
PowerTrench® | 8-SOIC (0.154", 3.90mm Width) | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 9A (Ta) | 4.5V, 10V | 11.5mOhm @ 9A, 10V | 2.5V @ 250µA | 29 nC @ 10 V | ±20V | 1610 pF @ 15 V | - | 1.47W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SOIC |
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NDP5060NDP5060 - 26A, 60V, 0.05OHM, N-C Fairchild Semiconductor |
1,080 | - |
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![]() 规格书 |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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FDS6676ASSMALL SIGNAL FIELD-EFFECT TRANSI Fairchild Semiconductor |
5,369 | - |
|
![]() 规格书 |
PowerTrench®, SyncFET™ | 8-SOIC (0.154", 3.90mm Width) | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 14.5A (Ta) | 4.5V, 10V | 6mOhm @ 14.5A, 10V | 3V @ 1mA | 63 nC @ 10 V | ±20V | 2510 pF @ 15 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SOIC |
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FDMS7570SPOWER FIELD-EFFECT TRANSISTOR, 2 Fairchild Semiconductor |
17,297 | - |
|
![]() 规格书 |
PowerTrench®, SyncFET™ | 8-PowerTDFN | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 25 V | 28A (Ta), 49A (Tc) | 4.5V, 10V | 1.95mOhm @ 28A, 10V | 3V @ 1mA | 69 nC @ 10 V | ±20V | 4515 pF @ 13 V | - | 2.5W (Ta), 83W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-PQFN (5x6) |
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FQP4N20LPOWER FIELD-EFFECT TRANSISTOR, 3 Fairchild Semiconductor |
2,000 | - |
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![]() 规格书 |
QFET® | TO-220-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 3.8A (Tc) | 5V, 10V | 1.35Ohm @ 1.9A, 10V | 2V @ 250µA | 5.2 nC @ 5 V | ±20V | 310 pF @ 25 V | - | 45W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220-3 |
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FQU5N40TUPOWER FIELD-EFFECT TRANSISTOR, 3 Fairchild Semiconductor |
36,535 | - |
|
![]() 规格书 |
QFET® | TO-251-3 Short Leads, IPAK, TO-251AA | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 400 V | 3.4A (Tc) | 10V | 1.6Ohm @ 1.7A, 10V | 5V @ 250µA | 13 nC @ 10 V | ±30V | 460 pF @ 25 V | - | 2.5W (Ta), 45W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | IPAK |
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FQU9N25TUPOWER FIELD-EFFECT TRANSISTOR, 7 Fairchild Semiconductor |
8,414 | - |
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![]() 规格书 |
QFET® | TO-251-3 Short Leads, IPAK, TO-251AA | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 250 V | 7.4A (Tc) | 10V | 420mOhm @ 3.7A, 10V | 5V @ 250µA | 20 nC @ 10 V | ±30V | 700 pF @ 25 V | - | 2.5W (Ta), 55W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | IPAK |
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FDMS4435BZPOWER FIELD-EFFECT TRANSISTOR, 9 Fairchild Semiconductor |
1,500 | - |
|
![]() 规格书 |
PowerTrench® | 8-PowerTDFN | Bulk | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 9A (Ta), 18A (Tc) | 4.5V, 10V | 20mOhm @ 9A, 10V | 3V @ 250µA | 47 nC @ 10 V | ±25V | 2050 pF @ 15 V | - | 2.5W (Ta), 39W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-PQFN (5x6) |
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FDD6680ASMOSFET N-CH 30V 55A TO252 Fairchild Semiconductor |
9,266 | - |
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![]() 规格书 |
PowerTrench®, SyncFET™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 55A (Ta) | 4.5V, 10V | 10.5mOhm @ 12.5A, 10V | 3V @ 1mA | 29 nC @ 10 V | ±20V | 1200 pF @ 15 V | - | 60W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252 (DPAK) |
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RFP4N05L4A, 50V, 0.8OHM, N-CHANNEL MOSFE Fairchild Semiconductor |
9,200 | - |
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![]() 规格书 |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |